Winsok-Semicon-WSD40120DN56G
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WSD40120DN56G
N-Ch MOSFET
General Description
Product Summery
The WSD40120DN use advanced SGT
MOSFET technology to provide low RDS(ON),
low gate charge, fast
switching and
excellent
avalanche characteristics.
BVDSS
RDSON
ID
40V
1.8mΩ
120A
This device is specially designed to get better
ruggedness and suitable to use in
Applications
z
Consumer electronic power supply
z
Synchronous-rectification
z
Synchronous-rectification applications
Features
Low RDS(on) & FOM
Extremely low switching loss
Excellent stability and uniformity or Invertors
DFN
5X6
-8
Pin Configuration
Absolute Maximum Ratings
at Tj=25
℃
unless otherwise noted
Symbol
Parameter
Rating
40
Units
V
V
DS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
±
20
120
82
V
A
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
400
400
A
EAS
Single Pulse Avalanche Energy
3
mJ
A
I
AS
Avalanche Current
40
Total Power Dissipation
4
W
℃
℃
125
P
D
@T
C
=25
℃
T
STG
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
5
0
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
1.
0
R
θJC
—
Dec.2014
Page 1
WSD40120DN56G
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
40
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
Static Drain-Source On-Resistance
2
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
2
0A
—
0.043
1.4
—
V/
℃
1.8
2.6
R
DS(ON)
R
DS(ON)
—
m
Ω
Static Drain-Source On-Resistance
2
—
1.2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mΩ
2.0
1.6
-6.94
—
V
GS
=4.5V , I
D
=20A
V
GS(th)
Gate Threshold Voltage
2.2
—
1
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=
32
V , V
GS
=0V , T
J
=25
℃
V
DS
=
32
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
5
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
53
V
DS
=5V , I
D
=20A
1.
0
45
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
Ω
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
V
DS
=
15
V , V
GS
=10V , I
D
=
2
0A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
12
—
18.5
18.5
—
—
—
—
—
—
—
V
DD
=
15
V , V
GEN
=10V , R
G
=
3.3
Ω
, I
D
=
20
A ,RL=15Ω.
9
58.5
32
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
3972
1119
82
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=20V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=
1
A , T
J
=25
℃
Min.
—
Typ.
—
Max.
100
1.2
Unit
A
I
S
Continuous Source Current
Diode Forward Voltage
2
V
SD
—
—
V
Note :
2
1.The data tested by surface mounted on a 1 inch
FR-4 board with 2OZ copper.
2 .The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
=25V,V =10V,L=0.5mH,I =40A
4.The power
DD GS
AS
dissipation is limited by 150
℃
junction temperature
5 .The data is theoretically the same as I
and I
D
, in real applications , should be limited by total power dissipation.
DM
Dec.2014
Page
2
WSD40120DN56G
N-Ch MOSFET
Typical Characteristics
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs G-S Voltage
Fig.3 Source Drain Forward Characteristics
Fig.4 Gate-Charge Characteristics
Fig.5 Normalized V
GS(th)
vs T
J
Fig.6 Normalized R
DSON
vs T
J
Dec.2014
Page
3
WSD40120DN56G
N-Ch MOSFET
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
P
DM
T
ON
SINGLE
0.01
0.001
T
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
1
2
BV
DSS
BV
DSS
-V
DD
EAS=
BV
DSS
L x I
AS
2
x
V
DS
90%
V
DD
I
AS
10%
V
GS
T
d(on)
T
r
T
on
T
d(off)
T
f
T
off
V
GS
Fig.10 Switching Time Waveform
Dec.2014
Page
4
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