Winsok-Semicon-WSD4048DN56
| Part # | Winsok-Semicon-WSD4048DN56 |
Download  | Winsok-Semicon-WSD4048DN56 |
WSD4048DN
56
N-Ch and
P
-Channel MOSFET
Product Summery
General Description
The
WSD4048DN
56
is the highest performance trench
N-ch and P-ch MOSFET with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the synchronous buck converter
applications .
BVDSS
40V
RDSON
ID
1
4
m
Ω
3
2
m
Ω
34
A
-2
4
A
-40V
The
WSD4048DN
56
meet the RoHS and Green
Product requirement 100% EAS guaranteed with full
function reliability approved.
Applications
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
CCFL Back-light Inverter
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
DFN5X6
C-8-
EP
2
Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
N-Ch
40
P-Ch
-40
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
V
V
±
20
34
±
20
I
D
@T
C
=25
℃
–
24
A
2
2
-1
8
A
I
D
@T
C
=
7
0
℃
I
DM
46
-40
A
EAS
Single Pulse Avalanche Energy
3
28
66
mJ
A
I
AS
P
D
@T
C
=25
℃
T
STG
Avalanche Current
Total Power Dissipation
4
17.8
25
-27.2
31.3
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
5
Page
1
Rev1.0 Mar.2022
WSD4048DN
56
N-Ch and
P
-Channel MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
40
—
—
—
1.
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=1
0
A
0.034
1
4
—
V/
℃
2
1
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
1
8
25
2.5
—
V
GS
=4.5V , I
D
=
5
A
V
GS(th)
Gate Threshold Voltage
2.0
-4.56
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=32V , V
GS
=0V , T
J
=25
℃
V
DS
=32V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
15
V
DS
=5V , I
D
=1
0
A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.
5
9.5
1.25
2.5
8.9
2.2
41
5.2
—
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=20V , V
GS
=4.5V , I
D
=12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=20V , V
GS
=10V , R
G
=3.3
Ω
—
I
D
=1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
2.7
810
90
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
60
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=25V , L=0.
5
mH , I
AS
=10A
10
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
23
Unit
A
I
S
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
46
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
1.2
V
Note :
1.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating .
4.
The power dissipation is limited by 150
℃
junction temperature
5.
The Min. value is 100% EAS tested guarantee.
6.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev1.0 Mar.2022
Page
2
WSD4048DN
56
N-Ch and
P
-Channel MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-40
—
Typ.
—
Max.
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
—
—
38
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-
10
A
-0.012
3
2
V/
℃
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
46
6
2
-2.5
—
V
GS
=-4.5V , I
D
=-4A
—
V
GS(th)
Gate Threshold Voltage
-1.
5
—
–
2.0
4.32
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-32V , V
GS
=0V , T
J
=25
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
V
DS
=-32V , V
GS
=0V , T
J
=55
℃
GS
=
±
20V , V
DS
=0V
—
—
5
V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-8A
—
12.6
13
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
16
—
Ω
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
9
V
DS
=-20V , V
GS
=-4.5V , I
D
=-12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
2.54
3.1
—
—
—
—
19.2
12.8
48.6
4.6
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
Ω
,
—
—
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
—
C
iss
-C
oss
C
rss
Input Capacitance
—
1904
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
108
80
—
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
20
—
—
mJ
V
DD
=-25V , L=0.1mH , I
AS
=-1
0
A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
-20
-40
-1
Unit
A
I
S
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
V
Note :
1.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating .
4.
The power dissipation is limited by 150
℃
junction temperature
5.
The Min. value is 100% EAS tested guarantee.
6.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev1.0 Mar.2022
Page
3
WSD4048DN
56
N-Ch and
P
-Channel MOSFET
N-Channel Typical Characteristics
12
40
35
30
25
1
0
I
D
=1
0
A
10
8
V
GS
=10V
V
GS
=7V
V
GS
=5V
6
V
GS
=4.5V
4
V
GS
=3V
2
0
2
4
6
8
10
0
0.5
1
1.5
2
V
DS
Drain-to-Source Voltage (V)
V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
10
12
V
DS
=20V
I
D
=12A
8
6
4
2
0
8
4
0
T =150
T =25
℃
J
℃
J
0
4
8
12
16
0.00
0.25
0.50
0.75
1.00
Q
G
, Total Gate Charge (nC)
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.7
1.4
1.1
0.8
0.5
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
)
T ,
Junction Temperature (
J
)
℃
℃
J
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Page
4
Rev1.0 Mar.2022
WSD4048DN
56
N-Ch and
P
-Channel MOSFET
1000
100
10
100
10
1
F=1.0MHz
Ciss
10us
100us
Coss
Crss
10ms
100ms
DC
T =25
℃
C
Single Pulse
0
1
5
9
13
17
21
25
0.1
1
10
100
V
DS
(V)
V
D
S
Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DU
T
Y=0.5
0.3
0.1
0.1
0.05
0.02
0.01
PDM
Ton
T
D = Ton/T
Tj peak
= TC + PDM x Rthjc
SINGLE PULSE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Wave
Rev1.0 Mar.2022
Page
5
WSD4048DN
56
N-Ch and
P
-Channel MOSFET
P-Channel Typical Characteristics
60
55
50
45
40
35
2
0
12
I
D
=-1
0
A
V
GS
=-10V
10
V
GS
=-7V
V
GS
=-5V
8
6
4
2
0
V
GS
=-4.5V
V
GS
=-3V
0
0.5
1
1.5
2
2
4
6
8
10
-V
D
S
Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
12
10
8
10
V
DS
=-20V
I
D
=-12A
8
6
4
2
0
6
T =150
T =25
℃
J
℃
J
4
2
0
0
6
12
18
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
)
℃
150
-50
0
J
50
100
150
T ,Junction
Temperature (
)
T ,
Junction Temperature (
J
℃
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Rev1.0 Mar.2022
Page
6
WSD4048DN
56
N-Ch and
P
-Channel MOSFET
10000
1000
100
100.00
10.00
1.00
F=1.0
M
Hz
Ciss
100us
1ms
10ms
100ms
DC
Coss
Crss
0.10
Tc=25
o
C
Single Pulse
10
0.01
1
5
9
13
17
21
25
0.1
1
10
100
-V
DS
(V)
-V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.3
0.1
0.1
0.05
0.02
P
DM
T
ON
T
0.01
D = T
ON
/T
S
I
NGLE PULSE
T
J
peak = T
C
+ P
DM
x R
θ
JC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
Rev1.0 Mar.2022
Page
7
