Winsok-Semicon-WSD4064DN

WSD40

64

DN  

Dual N-Ch MOSFET  

General Description  

Product Summery  

The

WSD406

4

DN

is the highest performance  

trench Dual

 

N-Ch MOSFET with extreme high  

cell density,which provide excellent RDSON and  

gate charge

 

for most of the synchronous buck  

converter applications

 

.  

BVDSS  

RDSON  

1

9

m

Ω

 

ID  

40V  

1

3

A  

Applications  

The

WSD406

4

DN

meet the RoHS and Green  

Product requirement 100%  

•

High Frequency Point-of-Load Synchronous  

EAS guaranteed with

 

full function  

reliability approved.  

Buck Converter for MB/NB/UMPC/VGA  

Networking DC-DC Power System  

Load Switch  

•

•

Features  

•

•

•

•

•

Advanced high cell density Trench technology  

Super Low Gate Charge  

DFN3

x

3-8-EP Pin Configuration  

Excellent CdV/dt effect decline  

100% EAS Guaranteed  

Green Device Available  

Absolute Maximum Ratings  

Symbol  

Parameter  

Rating  

Unit  

Common Ratings  

V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  

40  

±20  

V

V

Gate-Source Voltage  

Maximum Junction Temperature  

Storage Temperature Range  

150  

°C  

°C  

A

T

STG  

I

S  

–

5

5

t

o 150  

Diode Continuous Forward Current  

T

A

=25°C  

T

A

=25°C  

T

A

=70°C  

T

A

=25°C  

T

A

=25°C  

T

A

=70°C  

Steady State  

4

1

3

 

9.

5  

25  

I

D  

Continuous Drain Current  

A

A

a

Pulse Drain Current Tested  

I

DM  

P

D  

2.5  

1.68  

10  

Maximum Power Dissipation  

Thermal Resistance-Junction to Lead  

W

°C/W  

°C/W  

R



JL  

42.5  

50  

t





10s  

R



J

A

Thermal Resistance-Junction to Ambient  

Steady State

b  

c

Avalanche Current, Single pulse  

Avalanche Energy, Single pulse  

L=0.5mH  

10  

A

I

AS  

c

L=0.5mH  

25  

mJ  

E

AS  

Note a

：

Pulse width limited by max. junction temperature.  

Note b

：

Surface Mounted on 1in

2

pad area, t =999sec.  

Note c

：

UIS tested and pulse width limited by maximum junction temperature 150

o

C (initial temperature T

j

=25

o

C).  

Rev

1.0 Jan

. 20

23  

Page 1  

WSD40

64

DN  

Dual N-Ch MOSFET  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

Parameter  

Test Conditions  

Min.  

Typ.  

Max. Unit  

Static Characteristics  

BV

DSS  

Drain-Source Breakdown Voltage  

40  

–

–

–

1

V

V

GS

=0V, I

DS

=250  

V

DS

=32V, V

GS

=0V  



A  

–

I

DSS  

Zero Gate Voltage Drain Current  



A  

T

J

=85°C  

V

DS

=V

GS

, I

DS

=250  

–

1.0  

–

–

30  

Gate Threshold Voltage  

Gate Leakage Current  

1.5  

–

2.0  

±100  

25  

V

V

GS(th)  

I

GSS  



A  

V

GS

=±20V, V

DS

=0V  

nA  

V

GS

=10V, I

DS

=

6

A  

–

19  

25  

c

Drain-Source On-state Resistance  

m

  

R

DS(ON)  

A

–

35  

V

GS

=4.5V, I

DS

=

5  

Diode Characteristics  

c

Diode Forward Voltage  

I

SD

=1A, V

GS

=0V  

–

–

–

0.75  

12  

1.1  

V

ns  

nC  

V

SD  

t

rr  

Reverse Recovery Time  

–

–

I

DS

=6A, dl

SD

/dt=100A/



s  

Q

rr  

Reverse Recovery Charge  

8.

5  

Dynamic Characteristics

d  

2

.

4  

800  

90  

R

G  

C

iss  

C

oss  

C

rss  

t

d(ON)  

t

r  

Gate Resistance  

V

GS

=0V,V

DS

=0V,F=1MHz  

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–

–



Input Capacitance  

V

GS

=0V,  

V

DS

=20V,  

Frequency=1.0MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

Turn-off Fall Time  

55  

7.2  

6.5  

24  

V

DD

=20V,  

R

=20Ω ,  

L

I =1A,  

DS  

ns  

t

d( OFF)  

V

=10V,  

GEN  

R

= 6

 

Ω  

G

t

f  

4.5  

Gate Charge Characteristics

d  

V

DS

=20V, V

GS

=10V,  

I

DS

=6A  

Q

g  

Total Gate Charge  

–

15  

2

1  

Q

g  

Q

gth  

Q

gs  

Q

gd  

Total Gate Charge  

–

–

–

–

10  

–

8

.

2  

1.

7  

3.

1  

2.

5  

nC  

Threshold Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

V

DS

=20V, V

GS

=4.5V,  

I

DS

=6A  

–

–

Note c  

Note d  

：

：

Pulse test ; pulse width  

Guaranteed by design, no

t

s

ubject t

o

p

roduction testing.  



300



s, duty cy

c

l

e



2%.  

Rev 1: May.2019  

Page

2  

WSD40

64

DN  

Dual N-Ch MOSFET  

Typical Operating Characteristics  

Drain Current  

Power Dissipation  

3.0  

16  

14  

12  

10  

8

2.5  

2.0  

1.5  

1.0  

0.5  

6

4

2

T

A

=25

o

C,V

G

=10V  

T

A

=25

o

C  

0.0  

0

0

20 40 60 80

 

100 120 140 160  

0

20 40 60 80

 

100 120 140 160  

T

j

– Junction

T

e

mperature (

°

C)  

T

j

– Junction

T

emperature (

°

C)  

Safe Operation Area  

Thermal Transient Impedance  

100  

10  

2

1

Duty = 0.5  

0.2  

0.1  

it  

m

i

L

)

n

o

(

s

d

R

0.05  

0.1  

0.01  

1E-3  

0.02  

0.01  

300

µ

s  

1

1ms  

10ms  

Single Pulse  

0.1  

Mounted on 1in

2

pad  

100ms  

1s  

T

A

=25

o

C  

DC  

10  

R

0.01  

0.01  

0.1  

1

100 300  

1E-4 1E-3 0.01

 

0.1  

1

10 100

 

1000  

Square Wave Puls

e

D

uration (sec)  

V

DS

– Drain – Source Voltage (V)  

Rev 1: May.2019  

Page

3  

WSD40

64

DN  

Dual N-Ch MOSFET  

Typical Operating Characteristics (Cont.)  

Drain-Source On Resistance  

Output Characteristics  

30  

25  

20  

15  

10  

5

3

5

 

V

GS

=4,5,6,7,8,9,10V  

3.5V  

30  

V

GS

=4.5V  

2

5  

20  

V

GS

=10V  

3V  

1

5  

10  

0

0.0  

0.5  

1.0  

1.5  

2.0  

2.5  

3.0  

0

5

10  

15  

20  

25  

30  

V

DS

– Drain – Source Voltage (V)  

I

D

–

D

rain Current (A)  

Gate-Source On Resistance  

Gate Threshold Voltage  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

70  

60  

50  

40  

30  

20  

10  

0

I

DS

=

6

A  

I

DS

=250

µ

A  

-50 -25  

0

25 50 75

 

100 125 150  

2

3

4

5

6

7

8

9

10  

T

j

– Junction

T

e

mperature (

°

C)  

V

GS

– Gate – Source Voltage (V)  

Rev 1: May.2019  

Page

4  

WSD40

64

DN  

Dual N-Ch MOSFET  

Typical Operating Characteristics (Cont.)  

Drain-Source On Resistance  

Source-Drain Diode Forward  

30  

10  

2.0  

1.8  

1.6  

1.4  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

V

GS

= 10V  

I

DS

= 6A  

T

j

=150

o

C  

T

j

=25

o

C  

1

R

ON

@T

j

=25

o

C:1

9

m

Ω

 

0.1  

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4  

-50 -25  

0

25 50 75

 

100 125 150  

T

j

– Junction

T

emperature (

°

C)  

V

SD

– Source – Drain Voltage (V)  

Capacitance  

Gate Charge  

1200  

1000  

800  

600  

400  

200  

0

10  

Frequency=1MHz  

V

DS

=20V  

I

DS

=6A  

9

8

7

6

5

4

3

2

1

0

Ciss  

Coss  

Crss  

0

5

10 15 20 25 30 35 40  

0

2

4

6

8

10 12 14 16  

Q

G

–

G

ate Charge (nC)  

V

DS

– Drain – Source Voltage (V)  

Rev 1: May.2019  

Page

5  

Attention

ꢀ

 

1,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

do

ꢀ

not

ꢀ

have

ꢀ

specifications

ꢀ

that

ꢀ

can

ꢀ

handle

ꢀ  

applications

ꢀ

that

ꢀ

require

ꢀ

extremely

ꢀ

high

ꢀ

levels

ꢀ

of

ꢀ

reliability,

ꢀ

such

ꢀ

as

ꢀ

life

Ͳ

support

ꢀ

systems,

ꢀ

aircraft’s

ꢀ

control

ꢀ

systems,

ꢀ

or

ꢀ  

other

ꢀ

applications

ꢀ

whose

ꢀ

failure

ꢀ

can

ꢀ

be

ꢀ

reasonably

ꢀ

expected

ꢀ

to

ꢀ

result

ꢀ

in

ꢀ

serious

ꢀ

physical

ꢀ

and/or

ꢀ

material

ꢀ

damage.

ꢀ ꢀ  

Consult

ꢀ

with

ꢀ

your

ꢀ

Winsok

ꢀ

power

ꢀ

representative

ꢀ

nearest

ꢀ

you

ꢀ

before

ꢀ

using

ꢀ

any

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ  

contained

ꢀ

herein

ꢀ

in

ꢀ

such

ꢀ

applications.

ꢀ  

2,Winsok

ꢀ

power

ꢀ

assumes

ꢀ

no

ꢀ

responsibility

ꢀ

for

ꢀ

equipment

ꢀ

failures

ꢀ

that

ꢀ

result

ꢀ

from

ꢀ

using

ꢀ

products

ꢀ

at

ꢀ

values

ꢀ

that

ꢀ

exceed,

ꢀ ꢀ  

even

ꢀ

momentarily,

ꢀ

rated

ꢀ

values

ꢀ

(such

ꢀ

as

ꢀ

maximum

ꢀ

ratings,

ꢀ

operating

ꢀ

condition

ꢀ

ranges,

ꢀ

or

ꢀ

other

ꢀ

parameters)

ꢀ

listed

ꢀ

in

ꢀ  

products

ꢀ

specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein.

ꢀ  

3,

ꢀ

Specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

stipulate

ꢀ

the

ꢀ

performance,

ꢀ  

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

in

ꢀ

the

ꢀ

independent

ꢀ

state,

ꢀ

and

ꢀ

are

ꢀ

not

ꢀ

guarantees

ꢀ

of

ꢀ

the

ꢀ  

performance,

ꢀ

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

as

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ  

equipment.

ꢀ

T

o

ꢀ

verify

ꢀ

symptoms

ꢀ

and

ꢀ

states

ꢀ

that

ꢀ

cannot

ꢀ

be

ꢀ

evaluated

ꢀ

in

ꢀ

an

ꢀ

independent

ꢀ

device,

ꢀ

the

ꢀ

customer

ꢀ

should

ꢀ

always

ꢀ  

evaluate

ꢀ

and

ꢀ

test

ꢀ

devices

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ

equipment.

ꢀ  

4,

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ

strives

ꢀ

to

ꢀ

supply

ꢀ

high

Ͳ

quality

ꢀ

high

Ͳ

reliability

ꢀ

products.

ꢀ

However,

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ  

semiconductor

ꢀ

products

ꢀ

fail

ꢀ

with

ꢀ

some

ꢀ

probability.

ꢀ

It

ꢀ

is

ꢀ

possible

ꢀ

that

ꢀ

these

ꢀ

probabilistic

ꢀ

failures

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

accidents

ꢀ  

or

ꢀ

events

ꢀ

that

ꢀ

could

ꢀ

endanger

ꢀ

human

ꢀ

lives

ꢀ

that

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

smoke

ꢀ

or

ꢀ

fire,

ꢀ

or

ꢀ

that

ꢀ

could

ꢀ

cause

ꢀ

damage

ꢀ

to

ꢀ

other

ꢀ  

property.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

adopt

ꢀ

safety

ꢀ

measures

ꢀ

so

ꢀ

that

ꢀ

these

ꢀ

kinds

ꢀ

of

ꢀ

accidents

ꢀ

or

ꢀ

events

ꢀ

cannot

ꢀ

occur.

ꢀ

Such

ꢀ  

measures

ꢀ

include

ꢀ

but

ꢀ

are

ꢀ

not

ꢀ

limited

ꢀ

to

ꢀ

protective

ꢀ

circuits

ꢀ

and

ꢀ

error

ꢀ

prevention

ꢀ

circuits

ꢀ

for

ꢀ

safe

ꢀ

design,

ꢀ

redundant

ꢀ

design,

ꢀ  

and

ꢀ

structural

ꢀ

design.

ꢀ  

5,In

ꢀ

the

ꢀ

event

ꢀ

that

ꢀ

any

ꢀ

or

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products(including

ꢀ

technical

ꢀ

data,

ꢀ

services)

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

are

ꢀ  

controlled

ꢀ

under

ꢀ

any

ꢀ

of

ꢀ

applicable

ꢀ

local

ꢀ

export

ꢀ

control

ꢀ

laws

ꢀ

and

ꢀ

regulations,

ꢀ

such

ꢀ

products

ꢀ

must

ꢀ

not

ꢀ

be

ꢀ

exported

ꢀ

without

ꢀ  

obtaining

ꢀ

the

ꢀ

export

ꢀ

license

ꢀ

from

ꢀ

the

ꢀ

authorities

ꢀ

concerned

ꢀ

in

ꢀ

accordance

ꢀ

with

ꢀ

the

ꢀ

above

ꢀ

law.

ꢀ  

6,

ꢀ

No

ꢀ

part

ꢀ

of

ꢀ

this

ꢀ

publication

ꢀ

may

ꢀ

be

ꢀ

reproduced

ꢀ

or

ꢀ

transmitted

ꢀ

in

ꢀ

any

ꢀ

form

ꢀ

or

ꢀ

by

ꢀ

any

ꢀ

means,

ꢀ

electronic

ꢀ

or

ꢀ

mechanical,

ꢀ  

including

ꢀ

photocopying

ꢀ

and

ꢀ

recording,

ꢀ

or

ꢀ

any

ꢀ

information

ꢀ

storage

ꢀ

or

ꢀ

retrieval

ꢀ

system,

ꢀ

or

ꢀ

otherwise,

ꢀ

without

ꢀ

the

ꢀ

prior

ꢀ  

written

ꢀ

permission

ꢀ

of

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ  

7,

ꢀ

Information

ꢀ

(including

ꢀ

circuit

ꢀ

diagrams

ꢀ

and

ꢀ

circuit

ꢀ

parameters)

ꢀ

herein

ꢀ

is

ꢀ

for

ꢀ

example

ꢀ

only;

ꢀ

it

ꢀ

is

ꢀ

not

ꢀ

guaranteed

ꢀ

for

ꢀ  

volume

ꢀ

production. Winsok

ꢀ

power

ꢀ

believes

ꢀ

information

ꢀ

herein

ꢀ

is

ꢀ

accurate

ꢀ

and

ꢀ

reliable,

ꢀ

but

ꢀ

no

ꢀ

guarantees

ꢀ

are

ꢀ

made

ꢀ

or

ꢀ  

implied

ꢀ

regarding

ꢀ

its

ꢀ

use

ꢀ

or

ꢀ

any

ꢀ

infringements

ꢀ

of

ꢀ

intellectual

ꢀ

property

ꢀ

rights

ꢀ

or

ꢀ

other

ꢀ

rights

ꢀ

of

ꢀ

third

ꢀ

parties.

ꢀ  

8,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

information

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ

notice

ꢀ

due

ꢀ

to

ꢀ

product/technology

ꢀ  

improvement,etc.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

refer

ꢀ

to

ꢀ

the

ꢀ

“Delivery

ꢀ

Specification”

ꢀ

for

ꢀ

the

ꢀ

Winsok

ꢀ

power

ꢀ

product

ꢀ

that

ꢀ

you

ꢀ ꢀ  

Intend

ꢀ

to

ꢀ

use.

ꢀ  

9,

ꢀ

this

ꢀ

catalog

ꢀ

provides

ꢀ

information

ꢀ

as

ꢀ

of

ꢀ

Sep.2014. Specifications

ꢀ

and

ꢀ

information

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ  

notice.

ꢀ