Winsok-Semicon-WSD4066ADN
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WSD4066
A
DN
Dual N-Ch MOSFET
General Description
Product Summery
The
WSD4066DN
is the highest performance
trench Dual
N-Ch MOSFET with extreme
high cell density,which provide excellent
RDSON and gate charge
for most of the
synchronous buck converter
applications .
BVDSS
RDSON
17m
Ω
ID
40V
14A
Applications
The
WSD4066DN
meet the RoHS and
Green Product
requirement 100%
EAS guaranteed with
full function
reliability approved.
•
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Networking DC-DC Power System
Load Switch
•
•
Features
•
•
•
•
•
Advanced high cell density Trench technology
Super Low Gate Charge
DFN3.3×3.3-8-EP Pin Configuration
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
V
DSS
V
GSS
T
J
Drain-Source Voltage
40
±20
V
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
150
°C
°C
A
T
STG
I
S
–
5
5
t
o 150
Diode Continuous Forward Current
T
A
=25°C
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=25°C
T
A
=70°C
Steady State
2
14
9.8
28
I
D
Continuous Drain Current
A
A
a
Pulse Drain Current Tested
I
DM
P
D
2.5
1.68
10
Maximum Power Dissipation
Thermal Resistance-Junction to Lead
W
°C/W
°C/W
R
JL
42.5
75
t
10s
R
J
A
Thermal Resistance-Junction to Ambient
Steady State
b
c
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
L=0.5mH
10
A
I
AS
c
L=0.5mH
25
mJ
E
AS
Note a
：
Pulse width limited by max. junction temperature.
Note b
：
Surface Mounted on 1in
2
pad area, t =999sec.
Note c
：
UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
Rev1.0Mar.2022
Page 1
WSD4066
A
DN
Dual N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
40
–
–
–
1
V
V
GS
=0V, I
DS
=250
V
DS
=32V, V
GS
=0V
A
–
I
DSS
Zero Gate Voltage Drain Current
A
T
J
=85°C
V
DS
=V
GS
, I
DS
=250
–
1.
2
–
–
30
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
1.
8
–
2.0
±100
17
V
A
V
GS
=±20V, V
DS
=0V
V
GS
=10V, I
DS
=14A
nA
–
14
17
c
Drain-Source On-state Resistance
m
R
DS(ON)
A
V
GS
=4.5V, I
DS
=12
–
20
Diode Characteristics
c
Diode Forward Voltage
I
SD
=1A, V
GS
=0V
–
–
–
0.75
13
1.1
V
ns
nC
V
SD
t
rr
Reverse Recovery Time
–
–
I
DS
=6A, dl
SD
/dt=100A/
s
Q
rr
Reverse Recovery Charge
8.7
Dynamic Characteristics
d
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
2.5
815
95
–
–
–
–
–
–
–
–
Input Capacitance
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
60
7.8
6.9
22.4
4.8
V
DD
R
L
=20
=20V,
I
DS
=1A,
,
ns
t
d( OFF)
V
GEN
=10V,
R
G
=6
t
f
Gate Charge Characteristics
d
V
DS
=20V, V
GS
=10V,
I
DS
=6A
Q
g
Total Gate Charge
–
15.7
22
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
–
–
–
–
7.5
10.5
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
1.85
3.24
2.75
–
–
–
V
DS
=20V, V
GS
=4.5V,
I
DS
=6A
Note c
Note d
：
：
Pulse test ; pulse width
Guaranteed by design, no
t
s
ubject t
o
p
roduction testing.
300
s, duty cy
c
l
e
2%.
Rev1.0Mar.2022
Page 2
WSD4066
A
DN
Dual N-Ch MOSFET
Typical Operating Characteristics
Drain Current
Power Dissipation
3.0
16
14
12
10
8
2.5
2.0
1.5
1.0
0.5
6
4
2
T
A
=25
o
C,V
G
=10V
T
A
=25
o
C
0.0
0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
emperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
0.2
0.1
it
m
i
L
)
n
o
(
s
d
R
0.05
0.1
0.01
1E-3
0.02
0.01
300
µ
s
1
1ms
10ms
Single Pulse
0.1
Mounted on 1in
2
pad
100ms
1s
θ
JA
:110
o
C/W
T
A
=25
o
C
DC
10
R
0.01
0.01
0.1
1
100 300
1E-4 1E-3 0.01
0.1
1
10 100
1000
Square Wave Puls
e
D
uration (sec)
V
DS
– Drain – Source Voltage (V)
Rev1.0Mar.2022
Page 3
WSD4066
A
DN
Dual N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
30
25
20
15
10
5
30
25
20
15
10
5
V
GS
=4,5,6,7,8,9,10V
3.5V
V
GS
=4.5V
V
GS
=10V
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
60
50
40
30
20
10
0
I
DS
=6A
I
DS
=250
µ
A
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
T
j
– Junction
T
e
mperature (
°
C)
V
GS
– Gate – Source Voltage (V)
Rev1.0Mar.2022
Page 4
WSD4066
A
DN
Dual N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
30
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= 10V
I
DS
= 6A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 17m
Ω
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
1200
1000
800
600
400
200
0
10
Frequency=1MHz
V
DS
=20V
I
DS
=6A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
5
10 15 20 25 30 35 40
0
2
4
6
8
10 12 14 16
Q
G
–
G
ate Charge (nC)
V
DS
– Drain – Source Voltage (V)
Rev1.0Mar.2022
Page
5
Attention
1, Any and all Winsok power products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life
‐
support systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Winsok power representative nearest you before using any Winsok power products described or
contained herein in such applications.
2,Winsok power assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Winsok power products described or contained herein.
3, Specifications of any and all Winsok power products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. Toverify symptoms and states that cannot be evaluated in an independent device, the customer should always
evaluate and test devices mounted in the customer’s products or equipment.
4, Winsok power Semiconductor CO., LTD. strives to supply high
‐
quality high
‐
reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents
or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,
and structural design.
5,In the event that any or all Winsok power products(including technical data, services) described or contained herein are
controlled under any of applicable local export control laws and regulations, such products must not be exported without
obtaining the export license from the authorities concerned in accordance with the above law.
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including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Winsok power Semiconductor CO., LTD.
7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for
volume production. Winsok power believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
8, Any and all information described or contained herein are subject to change without notice due to product/technology
improvement,etc. When designing equipment, refer to the “Delivery Specification” for the Winsok power product that you
Intend to use.
9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change without
notice.
