Winsok-Semicon-WSD6056DN56
| Part # | Winsok-Semicon-WSD6056DN56 |
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WSD6056DN56
Dual N-Ch MOSFET
General Description
Product Summery
The
WSD6056DN56
is the highest
performance trench
Dual N-Ch MOSFET
with extreme high cell density,which provide
excellent RDSON and gate charge
for
most of the synchronous buck converter
applications .
BVDSS
RDSON
16
mΩ
ID
6
0V
45
A
Applications
The
WSD6056DN56
meet the
RoHS and Green
Product
requirement 100% EAS guaranteed
with full
function reliability approved.
•
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
Fast switching
•
•
Load Switch
Features
•
•
•
•
•
Advanced high cell density Trench technology
Super Low Gate Charge
DFN
5X6C
-8-EP
2
Pin Configuration
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
V
DSS
V
GSS
T
J
Drain-Source Voltage
6
0
±20
V
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
150
°C
°C
A
T
STG
I
S
–
5
5
t
o 150
45
45
Diode Continuous Forward Current
T
c
=25°C
T
c
=25°C
T
c
=70°C
T
c
=25°C
T
c
=25°C
T
C
=70°C
Steady State
I
D
Continuous Drain Current
A
A
28.5
180
b
Pulse Drain Current Tested
I
DM
P
D
67
45
5
Maximum Power Dissipation
Thermal Resistance-Junction to Lead
W
°C/W
°C/W
R
JL
45
90
20
20
t
10s
R
J
A
Thermal Resistance-Junction to Ambient
Steady State
b
d
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
L=0.5mH
A
I
AS
d
L=0.5mH
mJ
E
AS
Note a
Max. continuous current is limited by bonding wire.
：
Note b
Pulse width limited by max. junction temperature.
：
：
Note c
Surface mounted on 1in
2
pad area, steady state t = 999s.
Note d
UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature
T
=
25
o
C).
：
j
Rev 1: May.2019
Page 1
WSD6056DN56
Dual N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
6
0
–
–
–
1
V
V
GS
=0V, I
DS
=250
A
V
DS
=
60
V, V
GS
=0V
–
I
DSS
Zero Gate Voltage Drain Current
A
T
J
=85°C
V
DS
=V
GS
, I
DS
=250
–
1.2
–
–
30
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
1.5
–
2.5
±100
20
V
A
V
GS
=±20V, V
DS
=0V
nA
V
GS
=10V, I
DS
=
20
A
–
16
20
3
m
R
DS(ON)
Drain-Source On-state Resistance
A
–
25
V
GS
=4.5V, I
DS
=
15
Diode Characteristics
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=1A, V
GS
=0V
–
–
–
0.75
26
1.
2
V
ns
nC
V
SD
t
rr
–
–
I
SD
=
20
A, dl
SD
/dt=100A/
µ
s
Q
rr
30
Dynamic Characteristics
3,4
R
G
C
iss
C
oss
C
rss
t
d(ON)
t
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
0.9
945
275
26
–
–
–
–
–
–
–
–
Input Capacitance
V
GS
=0V,
V
DS
=
3
0V,
F=1.0MHz
Ω
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
10
13.5
28
VDD=30V,
I
DS
=1A
,
V
GEN
=10V
,
R
G
= 3.3Ω.
ns
t
d( OFF)
t
f
20
Gate Charge Characteristics
3,4
V
DS
=
3
0V,
V
GS
=10V, I
DS
=
20
A
Q
g
Total Gate Charge
–
2
8
–
–
–
–
–
Q
g
Q
gth
Q
gs
Q
gd
Total Gate Charge
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
–
17.6
3.5
nC
V
DS
=
3
0V, V
GS
=
10
V,
I
DS
=
20
A
2.7
6.3
Note :
1. Repetitive
Rating : Pulsed width limited by maximum junction temperature.
2. V
DD
=48V,V
GS
=10V,L=0.1mH,I
AS
=20A.,R
G
=25
Ω
Starting T
J
=25
3.
4. Essentially
independent of operating temperature.
The data tested by pulsed , pulse width
<=300us , duty cycle<=2%.
Rev 1: May.2019
Page 2
WSD6056DN56
Dual N-Ch MOSFET
Typical Operating Characteristics
T
C
, Case Temperature (
)
T
J
, Junction Temperature (
)
Fig.1 Continuous
Drain Current vs. T
C
Fig.2 Normalized
RDSON vs. T
J
Qg , Gate Charge (nC)
T
J
, Junction Temperature (
)
Fig.4 Gate
Charge Waveform
Fig.3 Normalized
V
th
vs. T
J
V
DS
,Drain to Source Voltage (
)
I
D
, Drain Current (A)
Fig.6 Turn-On
Resistance vs. I
D
Fig.5 Typical
Output Characteristics
Rev 1: May.2019
Page 3
WSD6056DN56
Dual N-Ch MOSFET
Typical Operating Characteristics(Cont.)
Square Wave Pulse Duration (s)
Fig.8 Normalized
Transient Response
V
DS
, Drain to Source Voltage (
)
Fig.7 Capacitance
Characteristics
V
DS
, Drain to Source Voltage (V)
Fig.9 Maximum
Safe Operation Area
Fig.10 Switching
Time Waveform
Fig.11 EAS
Waveform
Rev 1: May.2019
Page 4
Attention
1, Any and all Winsok power products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life
‐
support systems, aircraft’s control systems, or
other applications whose failure can be reasonably expected to result in serious physical and/or material damage.
Consult with your Winsok power representative nearest you before using any Winsok power products described or
contained herein in such applications.
2,Winsok power assumes no responsibility for equipment failures that result from using products at values that exceed,
even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in
products specifications of any and all Winsok power products described or contained herein.
3, Specifications of any and all Winsok power products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees of the
performance, characteristics, and functions of the described products as mounted in the customer’s products or
equipment. Toverify symptoms and states that cannot be evaluated in an independent device, the customer should always
evaluate and test devices mounted in the customer’s products or equipment.
4, Winsok power Semiconductor CO., LTD. strives to supply high
‐
quality high
‐
reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents
or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other
property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such
measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,
and structural design.
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including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior
written permission of Winsok power Semiconductor CO., LTD.
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volume production. Winsok power believes information herein is accurate and reliable, but no guarantees are made or
implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
8, Any and all information described or contained herein are subject to change without notice due to product/technology
improvement,etc. When designing equipment, refer to the “Delivery Specification” for the Winsok power product that you
Intend to use.
9, this catalog provides information as of Sep.2014. Specifications and information herein are subject to change without
notice.
