Winsok-Semicon-WSE9968A
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WS
E9968
A
N-Ch MOSFET
General Description
Product Summery
The WSE9968
A
is the highest performance
trench
N-Ch MOSFET
with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the synchronous buck
converter applications
.
BVDSS
RDSON
75
m
Ω
ID
100V
4.
4
A
Applications
The WSE9968
A
meet the RoHS and Green Pro
duct requirement , 100% EAS guaranteed with
full
function reliability approved.
z
High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOT
–
89
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
100
Units
V
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
±
20
4.
4
V
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
3.
5
A
16
12
A
EAS
Single Pulse Avalanche Energy
3
mJ
A
7.0
I
AS
Avalanche Current
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
3.5
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
85
35
R
θ
JC
—
Dec.2014
Page 1
WSE9968
A
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
4
A
0.098
75
—
V/
℃
m
Ω
m
Ω
V
95
R
DS(ON)
Static Drain-Source On-Resistance
2
1
20
8
0
V
GS
=4.5V , I
D
=
3.5
A
V
GS(th)
Gate Threshold Voltage
2.0
-4.57
—
3.0
—
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=2A
20
2.5
16
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
4
Ω
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
22
4.2
4.5
20
11
49
10
9
8
0
—
V
DS
=80V , V
GS
=10V , I
D
=
4
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
2.5
3
11
6
V
DD
=50V , V
GS
=10V , R
G
=
6
Ω
I
D
=
1
A
,R
L
=30Ω.
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
27
5
C
iss
C
oss
C
rss
Input Capacitance
7
60
4
6
2
6
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
12
—
—
mJ
V
DD
=25V , L=0.
5
mH , I
AS
=
4
A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
3.0
16
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
1.2
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
V
—
27
36
—
—
nS
nC
I
F
=
3
A dI/dt=100A/µs , T
J
=
2
5
℃
,
Q
rr
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.
5
mH,I
AS
=
4
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WSE9968
A
N-Ch MOSFET
Typical Characteristics
96
94
92
90
88
15
I
D
=
4
A
V
GS
=10V
V
GS
=7V
V
GS
=5V
V
GS
=4.5V
12
9
V
GS
=3V
6
3
0
4
6
8
10
0
0.5
1
1.5
2
2.5
V
GS
(V)
V
DS
, Drain-to-Source Voltage (V)
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
10
8
I
D
=4A
6
T =150
T =25
℃
J
℃
J
4
2
0
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
2.5
1.8
2.0
1.5
1.0
0.5
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
J
)
T ,
Junction Temperature (
J
)
℃
℃
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Dec.2014
Page
3
WSE9968
A
N-Ch MOSFET
15
00
3
00
100
10
10.00
1.00
0.10
0.01
F=1.0MHz
Ciss
100us
1ms
10ms
100ms
Coss
Crss
21
T
A
=25
o
C
DC
Single Pulse
1
5
9
13
17
25
0.01
0.1
1
10
100
1000
V
DS
(V)
V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.01
P
DM
T
ON
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θ
JC
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Dec.2014
Page
4
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Sep.2014. Specifications
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