Winsok-Semicon-WSF09N20
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WSF0
9
N
2
0
N-Ch MOSFET
General Description
Product Summery
The
WSF0
9
N
2
0
is the highest performance trench
N-Ch MOSFET
with extreme high cell density
,
which
provide excellent RDSON and gate charge
for most
of the synchronous buck converter
applications .
BVDSS
RDSON
ID
2
00V
0.
21
Ω
9
A
Applications
The WSF0
9
N20 meet the RoHS and Green
Product requirement
, 100% EAS guaranteed with
full function
reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252 Pin Configuration
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
2
00
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
3
0
9
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
3.
13
A
9
A
5.8
A
36
A
EAS
Single Pulse Avalanche Energy
3
320
mJ
A
9
I
AS
Avalanche Current
Total Power Dissipation
3
Total Power Dissipation
3
W
W
℃
℃
83
P
D
@T
C
=25
℃
4
7
P
D
@T
c
=
100
℃
T
STG
T
J
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
3
0
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
1.6
R
θ
JC
—
Dec.2014
Page 1
WSF0
9
N20
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
2
00
—
Typ.
Max.
Unit
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
—
—
—
V
△
BV
DSS
/△
T
J
0.
25
0.
21
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
4
.5
A
V/
℃
Ω
0.
25
—
R
DS(ON)
Static Drain-Source On-Resistance
2
0.
26
0.
29
2.5
—
Ω
V
V
GS
=
6.0
V , I
D
=
3.6
A
—
V
GS(th)
Gate Threshold Voltage
1
.0
—
1.8
-4.
6
3
—
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
—
1
V
DS
=
200
V , V
GS
=0V , T
J
=25
℃
V
DS
=
160
V , V
GS
=0V , T
J
=
12
5
℃
I
DSS
Drain-Source Leakage Current
uA
10
—
—
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
±
100
—
nA
S
V
GS
=
±
30
V , V
DS
=0V
0.21
2
V
DS
=
30
V , I
D
=
4
.5
A
—
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
4
Ω
—
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
1
1
.8
2.36
3.98
10
.33
10.7
29.1
—
—
—
—
V
DS
=
1
6
0V , V
GS
=10V , I
D
=
9
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=
100
V , V
GS
=10V ,
R
G
=
10
Ω
I
D
=
9
A
R
L
=
1
0Ω
—
—
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
11.
1
5
0
9
51
.2
3
.
2
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=
25
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Single Pulse Avalanche Energy
5
V
DD
=25V , L=0.1mH , I
AS
=5A
320
—
mJ
—
EAS
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
9
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
36
1.
4
—
A
—
—
V
V
GS
=0V , I
S
=
5
A , T
J
=25
℃
201
—
nS
nC
I
F
=
5
A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
663
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=
5
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WSF0
9
N20
N-Ch MOSFET
Typical Characteristics
25
20
15
10
5
25
PULSED TEST
V
DS
= 30V
V
GS
= 10.0V
7.5V
25
℃
5.0V
4.5V
4.0V
20
3.5V
15
150
℃
10
5
0
0
0
10
20
30
0
2
4
6
8
10
VDS,Drain-to-Source Voltage,V
VGS,Gate-to-Source Voltage,V
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
1.2
1.0
0.8
0.6
0.4
0.2
PULSED TEST
PULSED TEST
V
GS
= 0V
10
150
℃
V
GS
= 10V
25
℃
1
V
GS
= 20V
0.1
0
10
20
30
40
50
0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2
I
D
,Drain Current,A
VSD,Source-to-Drain Voltage,V
Figure 3. Drain-to-Source On Resistance vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage vs.
Source Current and Temperature
10000
10
V
DS
= 160V
V
DS
= 100V
V
DS
= 40V
8
C
iss
1000
100
10
6
4
C
oss
f = 1MHz
iss
= C
gs
+C
gd
C
rss
C
2
C
oss
= C
ds
+C
gd
C
rss
= C
gd
I
D
= 9A
1
0
0.1
1
10
100
0
2
4
6
8
10
12
Q
G
,Total Gate Charge,nC
VDS,Drain-to-Source Voltage,V
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Dec.2014
Page
3
WSF0
9
N20
N-Ch MOSFET
3
2.5
2
1.2
1.1
1
PULSED TEST
V
GS
= 10V
I
D
= 4.5A
1.5
1
0.9
0.5
0.8
-100
0
-50
0
50
100
150
200
-100
-50
0
50
100
150
200
T
J
,Junction Temperature(
℃
)
T
J
,Junction Temperature(
℃
)
Figure 7. Normalized Breakdown Voltage vs.
Junction Temperature
Figure 8. Normalized On Resistance vs.
Junction Temperature
10
9
8
7
6
5
4
3
2
1
0
100
10
ꢀ
s
100
ꢀ
s
10
1ms
10ms
DC
1
Operation in This Area
is Limited by R
DS(on)
0.1
SINGLE PULSE
T
C
=25
℃
0.01
1
10
100
1000
0
25
50
75
100
125
150
VDS,Drain-to-Source Voltage,V
T
C
,Case Temperature,
℃
Figure 10. Maximum Continuous Drain Current vs.
Case Temperature
Figure 9. Maximum Safe Operating Area for RU9N20A
1
D=0.50
0.20
0.10
0.05
0.1
0.02
0.01
Notes:
SINGLE PULSE
1.Duty Factor D = t1/t2
2.Peak Tj = Pdm x Zthjc + Tc
(THERMAL RESPONSE)
0.01
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
t,Pulse Duration,s
Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case for RU9N20A
Dec.2014
Page
4
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power
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Semiconductor
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Ͳ
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adopt
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Sep.2014. Specifications
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