Winsok-Semicon-WSF15P10
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WS
F
1
5P
10
P-Ch MOSFET
General Description
Product Summery
The WSF15P10 is the highest performance trench
P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDSON
ID
–
10
0V
1
5
0m
Ω
–
1
3
A
Applications
The WSF15P10 meet the RoHS and Green
Product requirement,100%
EAS guaranteed with
full function
reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252 Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
–
10
0
±
20
–
1
3
Units
V
V
DS
Drain-Source Voltage
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Gate-Sou
r
ce Voltage
V
Continuous Drain Current, -V
GS
@ -10V
1
Continuous Drain Current, -V
GS
@ -10V
1
Pulsed Drain Current
2
A
–
7
A
–
45
A
25
EAS
Single Pulse Avalanche Energy
3
mJ
A
-1
0
I
AS
Avalanche Current
Total Power Dissipation
4
W
℃
℃
50
P
D
@T
C
=25
℃
T
STG
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
50
2.5
R
θ
JC
—
Dec.2014
Page 1
WS
F
1
5P
10
P-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
10
0
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
Static Drain-Source On-Resistance
2
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-
5.5
A
-0.021
1
5
0
—
V/
℃
m
Ω
V
1
9
0
R
DS(ON)
—
–
3
4.08
—
–
4
—
1
V
GS(th)
Gate Threshold Voltage
–
2
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/
℃
V
DS
=-48V , V
GS
=0V , T
J
=25
℃
I
DSS
Drain-Source Leakage Current
uA
V
DS
=-48V , V
GS
=0V , T
J
=55
℃
GS
=
±
20V , V
DS
=0V
—
5
V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
±
100
—
—
—
—
—
—
—
—
—
—
—
nA
S
8
V
DS
=-10V , I
D
=-6A
13.7
Q
g
V
DS
=-
5
0V , V
GS
=-
10
V , I
D
=-
5.5
A
nC
Q
gs
Q
gd
T
d(on)
T
r
3
3.8
8
Turn-On Delay Time
Rise Time
V
DD
=-
30
V , V
GS
=-10V , R
G
=
6
Ω
,
I
D
=-1A
,RG=30Ω.
4
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
22
12
C
iss
C
oss
C
rss
Input Capacitance
600
60
V
DS
=-
30
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
34
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Single Pulse Avalanche Energy
5
20
—
—
mJ
V
DD
=-25V , L=0.
5
mH , I
AS
=-10A
EAS
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
–
2.0
–
45
Unit
A
I
S
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
-1.2
V
Note :
1.
2
The data tested by surface mounted on a 1 inch
FR-4 board with 2OZ copper
,t
≦
10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.
5
mH,I
AS
=-
10
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WS
F
1
5P
10
P-Ch MOSFET
Typical Characteristics
210
190
170
1
6
0
1
3
0
8
I
D
=-
5.5
A
6
4
2
0
V
GS
=-10V
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
1.5
0
0.5
1
2
2
4
6
8
10
-V
DS
, Drain-to-Source Voltage (V)
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance v.s Gate-Source
6
4
2
0
10
V
DS
=-
5
0V
I
D
=-
5.5
A
8
6
4
2
0
T =150
T =25
℃
J
℃
J
0.0
0.4
0.8
1.2
0
2.5
5
7.5
10
V
SD
, Source-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
)
℃
150
-50
0
J
50
100
150
T ,Junction
Temperature (
)
T ,
Junction Temperature (
J
℃
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Dec.2014
Page
3
WS
F
1
5P
10
P-Ch MOSFET
10000
1000
100
100
10
1
F=1.0
M
Hz
Ciss
10us
100us
10ms
100ms
Coss
Crss
21
DC
T =25
℃
C
Single Pulse
0
10
0.1
1
10
-V
DS
(V)
100
1000
1
5
9
13
17
25
-V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
P
DM
T
ON
0.02
0.01
T
D =
T
ON
/T
SINGLE
T
Jpeak
=
T
C
+P
D
M
XR
θ
JC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
Dec.2014
Page
4
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Sep.2014. Specifications
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