Winsok-Semicon-WSF2048
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WSF20
48
N-Ch MOSFET
General Description
Product Summery
The
WSF204
8
is the highest performance
trench N-ch
MOSFET with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the synchronous buck
converter applications
.
BVDSS
RDSON
ID
2
0V
6.2
m
Ω
4
0
A
Applications
The
WSF204
8
meet the RoHS and
Green Product
requirement , 100% EAS
guaranteed with full
function reliability
approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252 Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
V
DS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
2
0
±
12
4
0
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
A
28
A
80
A
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
EAS
150
mJ
A
I
AS
40
P
D
@T
C
=25
℃
T
STG
Total Power Dissipation
4
60
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 1
50
-55 to 1
50
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
Thermal Resistance Junction-Ambient
(t
≤
10s)
Thermal Resistance Junction-Case
62
25
R
θ
JA
—
3.8
R
θ
JC
—
Rev 2: May.2019
Page 1
WSF20
48
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
2
0
—
—
—
0.5
—
—
—
—
1
0
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=
4.5
V , I
D
=
25
A
0.028
6.2
—
V/
℃
10
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
12
9.1
0.75
-6.16
—
V
GS
=
2
.5V , I
D
=
1
0
A
V
GS(th)
Gate Threshold Voltage
1.
2
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
1
V
DS
=
20
V , V
GS
=0V , T
J
=25
℃
V
DS
=2
0
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=30A
—
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.
0
15
3.1
—
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=15V , V
GS
=4.5V , I
D
=15A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
1.8
2.8
4.5
9.2
18.7
3.3
1100
162
105
—
—
—
V
DD
=15V , V
GS
=10V , R
G
=3.3
Ω
—
I
D
=15A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
Unit
A
I
S
Continuous Source Current
Diode Forward Voltage
30
1.
2
V
SD
—
—
V
t
rr
Reverse Recovery Time
Reverse Recovery Charge
—
—
18
—
—
nS
nC
I
F
=
20
A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
9.5
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t ≤ 10 sec.
3.
Pulse
T
e
st: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4.
Guaranteed by design, not subject to production
5.
E
AS
condition : Tj=25
℃
,V
DD
=10
V
,
V
G
=10
V
,
L=0.5mH,Rg=25Ω
，
Rev 2: May.2019
Page
2
WSF20
48
N-Ch MOSFET
Typical Characteristics
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
T
J
–
Junction
T
e
mperature
Figure 4 Rdson-Junction Temperature
( )
℃
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd
ource-Drain Voltage (V)
Figure 3 Rdson-
Drain Current
Figure 6 S
urce- Drain Diode Forward
Rev 2: May.2019
Page
3
WSF20
48
N-Ch MOSFET
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 Current De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Rev 2: May.2019
Page
4
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applications
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
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systems,
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aircraft’s
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control
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systems,
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or
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whose
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expected
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result
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in
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serious
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physical
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and/or
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material
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damage.
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Consult
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with
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your
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representative
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nearest
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you
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before
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described
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for
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even
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momentarily,
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rated
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values
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(such
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maximum
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operating
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condition
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ranges,
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or
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in
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in
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o
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power
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Semiconductor
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CO.,
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LTD.
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adopt
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Sep.2014. Specifications
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