Winsok-Semicon-WSF3012
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WS
F
3
012
N-Ch and
P
-Channel MOSFET
Product Summery
General Description
The WSF
3
012 is the highest performance trench N-ch
and P-ch MOSFET with extreme high cell
density ,
which provide excellent RDSON and gate
charge for
most of the synchronous buck converter
applications .
The WSF
3
012 meet the RoHS and Green Product
requirement 100% EAS guaranteed with full
function
reliability approved.
BVDSS
3
0V
RDSON
ID
18
m
Ω
3
0m
Ω
22
A
–
15
A
–
3
0V
Applications
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
CCFL Back-light Inverter
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252
-4L
Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
D1/D2
z
Green Device Available
G2
S2
Absolute Maximum Ratings
G1
S1
Rating
Symbol
Parameter
Units
N-Ch
3
0
P-Ch
–
3
0
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
V
V
±
20
23
±
20
I
D
@T
C
=25
℃
–
15
A
13.1
–
9.6
A
I
D
@T
C
=
7
0
℃
I
DM
55
28
-4
9
A
EAS
Single Pulse Avalanche Energy
3
66
mJ
A
I
AS
P
D
@T
C
=25
℃
T
STG
Avalanche Current
Total Power Dissipation
4
17.8
-27.2
32.5
32.5
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
5
Dec.2014
Page
1
WS
F
3
012
N-Ch and
P
-Channel MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
3
0
—
—
—
1.
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=12A
0.03
3
1
3
—
V/
℃
18
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
2
1
1
6
V
GS
=4.5V , I
D
=10A
V
GS(th)
Gate Threshold Voltage
1.5
-4.5
2
—
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
1
V
DS
=3
0
V , V
GS
=0V , T
J
=25
℃
V
DS
=3
0
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
6.4
2.6
7.4
2.3
3
V
DS
=5V , I
D
=
8
A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
5.2
—
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=
15
V , V
GS
=
10
V , I
D
=
8
A
V
DD
=
15
V , V
GS
=10V , I
D
=
8
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
3.8
10
—
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
22
—
6.6
620
85
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
60
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=25V , L=0.1mH , I
AS
=10A
25
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
21
Unit
A
I
S
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
42
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
1.
1
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=17.8A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WS
F
3
012
N-Ch and
P
-Channel MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
3
0
—
—
Typ.
—
Max.
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
—
—
29
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-
7
A
-0.01
1
24
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
35
46
-2.5
—
V
GS
=-4.5V , I
D
=-4A
—
V
GS(th)
Gate Threshold Voltage
-1.
2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–
1.6
4.3
1
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-3
0
V , V
GS
=0V , T
J
=
2
5
℃
V
DS
=-3
0
V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
1
0
V
DS
=-5V , I
D
=-
6
A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1
4
8
16
—
Ω
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=-20V , V
GS
=-4.5V , I
D
=-12A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
3.3
2.3
4.6
—
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=3.3
Ω
,
1
4
—
34
I
D
=-1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
18
757
1
22
8
8
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
20
—
—
mJ
V
DD
=-25V , L=0.1mH , I
AS
=-15A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
–
15
–
35
-1
Unit
A
I
S
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-27.2A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
3
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
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products
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described
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or
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contained
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herein
ꢀ
do
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not
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have
ꢀ
specifications
ꢀ
that
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can
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handle
ꢀ
applications
ꢀ
that
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require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
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to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
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your
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Winsok
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power
ꢀ
representative
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nearest
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you
ꢀ
before
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using
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any
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Winsok
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power
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products
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described
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or
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contained
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herein
ꢀ
in
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such
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applications.
ꢀ
2,Winsok
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power
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assumes
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no
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responsibility
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for
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equipment
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failures
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that
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result
ꢀ
from
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using
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products
ꢀ
at
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values
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that
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exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
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as
ꢀ
maximum
ꢀ
ratings,
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operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
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products
ꢀ
specifications
ꢀ
of
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any
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and
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all
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Winsok
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power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
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herein.
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3,
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Specifications
ꢀ
of
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any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein
ꢀ
stipulate
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the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
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the
ꢀ
described
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products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
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and
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are
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not
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guarantees
ꢀ
of
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the
ꢀ
performance,
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characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
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the
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described
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products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
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be
ꢀ
evaluated
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in
ꢀ
an
ꢀ
independent
ꢀ
device,
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the
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customer
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should
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always
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evaluate
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and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
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the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
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supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
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any
ꢀ
and
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all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
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with
ꢀ
some
ꢀ
probability.
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It
ꢀ
is
ꢀ
possible
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that
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these
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probabilistic
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failures
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could
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give
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rise
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to
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accidents
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or
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events
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that
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could
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endanger
ꢀ
human
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lives
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that
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could
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give
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rise
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to
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smoke
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or
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fire,
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or
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that
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could
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cause
ꢀ
damage
ꢀ
to
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other
ꢀ
property.
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When
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designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
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these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
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or
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events
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cannot
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occur.
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Such
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measures
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include
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but
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are
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not
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limited
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to
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protective
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circuits
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and
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error
ꢀ
prevention
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circuits
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for
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safe
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design,
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redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
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the
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event
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that
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any
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or
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all
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Winsok
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power
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data,
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herein
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applicable
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the
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export
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license
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from
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the
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authorities
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concerned
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in
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accordance
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with
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the
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above
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law.
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No
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of
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Semiconductor
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CO.,
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ꢀ
7,
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Information
ꢀ
(including
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circuit
ꢀ
diagrams
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and
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circuit
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parameters)
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herein
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is
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for
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example
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only;
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is
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volume
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information
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described
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contained
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herein
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are
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subject
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to
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change
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without
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notice
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due
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to
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product/technology
ꢀ
improvement,etc.
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When
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designing
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equipment,
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refer
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to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
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the
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Winsok
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power
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product
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that
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you
ꢀ ꢀ
Intend
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to
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use.
ꢀ
9,
ꢀ
this
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catalog
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provides
ꢀ
information
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as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
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notice.
ꢀ
