Winsok-Semicon-WSF3089
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WSF308
9
N-Ch MOSFET
General Description
Product Summery
The
WSF308
9
is the highest performance trench
N-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate
charge for
most of the synchronous buck
converter applications
.
BVDSS
RDSON
ID
30V
4.5
m
Ω
7
2
A
Applications
The
WSF308
9
meet the RoHS and Green
Product requirement
, 100% EAS
guaranteed with full
function reliability
approved.
z
Synchronous Buck Converter
z
DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252 Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
V
DS
V
GS
Drain-Source Voltage
30
V
V
Gate-Sou
r
ce Voltage
±
20
1
7
2
46
A
Continuous Drain Current,@TC=25
℃
Continuous Drain Current, @TC=
100
℃
1
Pulsed Drain Current
2
Single Pulse Avalanche Energy
3
Total Power Dissipation
@TC=25
℃
4
Storage
T
e
mperature Range
I
D
A
I
DM
EAS
P
D
200
A
80
mJ
W
50
T
STG
T
J
-55 to 1
50
-55 to 1
50
℃
℃
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
62
31
R
θ
JA
—
2.
5
R
θ
JC
—
Rev
1.0.
Ma
r
.20
23
Page 1
WSF308
9
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
3
0
A
0.028
4.5
—
V/
℃
—
6.
2
9.
2
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
7.0
1.5
-6.16
—
V
GS
=4.5V , I
D
=
2
0
A
—
V
GS(th)
Gate Threshold Voltage
1.
1
—
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
nA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
±
100
—
—
—
—
—
—
—
—
—
—
—
35
—
V
DS
=15V , V
GS
=
10
V , I
D
=
30
A
nC
Q
gs
Q
gd
T
d(on)
T
r
6.8
7.5
11
—
—
—
V
DD
=15V , V
GS
=10V , R
G
=
6
Ω
15
ns
—
I
D
=15A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
37.3
10.6
1800
220
178
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
7
2
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
200
1.3
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
V
—
10
—
—
nS
nC
I
F
=
2
0A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
2.5
Note :
1.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating . The test condition is V
DD
=
15
V,V
GS
=10V,L=0.
5
mH,I
AS
=
18
A
4.
The power dissipation is limited by 175
℃
junction temperature
5.
The Min. value is 100% EAS tested guarantee.
6.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev
1.0.
Ma
r
.20
23
Page
2
WSF308
9
N-Ch MOSFET
Typical Operating Characteristics
Power Dissipation
Drain Current
60
8
0
7
0
6
0
5
0
4
0
3
0
2
0
0
50
40
30
20
10
T
C
=25
o
C
0
T
C
=25
o
C,V
G
=10V
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
e
mperature
Safe Operation Area
Thermal Transient Impedance
3
1
40
0
Duty = 0.5
it
m
i
100
L
0.2
0.1
)
n
o
(
s
d
R
100
µ
s
300
µ
s
0.05
0.1
0.01
1E-3
1E-4
0.02
0.01
10
1
1ms
Single Pulse
10ms
DC
θ
JC
:2.5
o
C/W
0.01 0.1
T
C
=25
o
C
R
0.1
0.1
1E-6
1E-5
1E-4
1E-3
1
10
100
V
DS
– Drain – Source Voltage (V)
Square Wave Puls
e
D
uration (sec)
Rev
1.0.
Ma
r
.20
23
Page
3
WSF308
9
N-Ch MOSFET
Typical Operating Characteristics
Thermal Transient Impedance
Safe Operation Area
2
1
300
Duty = 0.5
100
it
m
i
L
)
0.2
on
(
ds
10
1
300
µ
s
R
0.1
0.05
1ms
0.1
0.01
1E-3
0.02
10ms
100ms
0.01
0.1
1s
0.01
1E-3
1E-4
10s
Single Pulse
Mounted on 1in
2
pad
θ
JA
:60
o
C/W
T
A
=25
O
C
DC
R
1E-4 1E-3 0.01
0.1
1
10 100
1000
0.01
0.1
1
10
100
V
DS
– Drain – Source Voltage (V)
Square Wave Puls
e
D
uration (sec)
Output Characteristics
Drain-Source On Resistance
14
12
10
8
140
120
100
80
V
GS
= 4.5,5,6,7,8,9,10V
4V
V
GS
=4.5V
V
GS
=10V
3.5V
6
60
4
40
2
20
3V
0
0
0.0
0
20
40
60
80 100
120 140
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Rev
1.0.
Ma
r
.20
23
Page
4
WSF308
9
N-Ch MOSFET
Typical Operating Characteristics
Gate-Source On Resistance
Gate Threshold Voltage
24
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=
3
0A
I
DS
=250
µ
A
21
18
15
12
9
6
3
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Source-Drain Diode Forward
Drain-Source On Resistance
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= 10V
3
00
10
1
I
DS
=
3
0A
T
j
=150
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C:4.
5
m
Ω
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Rev
1.0.
Ma
r
.20
23
Page
5
WSF308
9
N-Ch MOSFET
Typical Operating Characteristics
Capacitance
Gate Charge
2
6
00
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
V
DS
= 15V
24
00
20
00
I
DS
=
3
0A
Ciss
1
8
00
1
6
00
1
2
00
10
00
8
00
6
00
Coss
Crss
200
0
0
5
10
15
20
25
30
25
35
0
5
10
15
V
DS
–
D
rain-Source Voltage (V)
Q
G
–
G
ate Charge (nC)
Rev
1.0.
Ma
r
.20
23
Page
6
Attention
ꢀ
1,
ꢀ
Any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein
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do
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not
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have
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specifications
ꢀ
that
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can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
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your
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Winsok
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power
ꢀ
representative
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nearest
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you
ꢀ
before
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using
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any
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Winsok
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power
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products
ꢀ
described
ꢀ
or
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contained
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herein
ꢀ
in
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such
ꢀ
applications.
ꢀ
2,Winsok
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power
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assumes
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no
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responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
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that
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result
ꢀ
from
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using
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products
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at
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values
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that
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exceed,
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even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
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as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
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products
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specifications
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of
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any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein.
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3,
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Specifications
ꢀ
of
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any
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and
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all
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Winsok
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products
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described
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or
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contained
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herein
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stipulate
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the
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performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
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the
ꢀ
described
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products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
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are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
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performance,
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characteristics,
ꢀ
and
ꢀ
functions
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of
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the
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described
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products
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as
ꢀ
mounted
ꢀ
in
ꢀ
the
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customer’s
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products
ꢀ
or
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equipment.
ꢀ
T
o
ꢀ
verify
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symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
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be
ꢀ
evaluated
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in
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an
ꢀ
independent
ꢀ
device,
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the
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customer
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should
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always
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evaluate
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and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
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the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
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any
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and
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all
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semiconductor
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products
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fail
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with
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some
ꢀ
probability.
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It
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is
ꢀ
possible
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that
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these
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probabilistic
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failures
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could
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give
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rise
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to
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accidents
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or
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events
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that
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could
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endanger
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human
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lives
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that
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could
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give
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rise
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to
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smoke
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or
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fire,
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or
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that
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could
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cause
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damage
ꢀ
to
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other
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property.
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When
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designing
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equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
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that
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these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
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or
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events
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cannot
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occur.
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Such
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measures
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include
ꢀ
but
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are
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not
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limited
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to
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protective
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circuits
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and
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error
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prevention
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circuits
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for
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safe
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design,
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redundant
ꢀ
design,
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and
ꢀ
structural
ꢀ
design.
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5,In
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the
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event
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that
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any
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or
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all
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Winsok
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herein
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are
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controlled
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under
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of
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applicable
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exported
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the
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export
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license
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from
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the
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concerned
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in
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accordance
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with
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the
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above
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law.
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No
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part
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of
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Winsok
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power
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Semiconductor
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CO.,
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LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
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is
ꢀ
for
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example
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only;
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it
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is
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not
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guaranteed
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for
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volume
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production. Winsok
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information
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herein
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reliable,
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are
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implied
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regarding
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its
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use
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any
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of
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parties.
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information
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described
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contained
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herein
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are
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subject
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to
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change
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without
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notice
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due
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to
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product/technology
ꢀ
improvement,etc.
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When
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designing
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equipment,
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refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
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the
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Winsok
ꢀ
power
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product
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that
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you
ꢀ ꢀ
Intend
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to
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use.
ꢀ
9,
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this
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catalog
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provides
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information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
