Winsok-Semicon-WSF3410
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WSF3410
N-Ch MOSFET
Product Summery
General Description
The
WSF3410
is the highest performance trench
N-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the synchronous buck converter
applications .
BVDSS
RDSON
ID
9
0
m
Ω
100V
1
5
A
Applications
The
WSF3410
meet the RoHS and Green Product
requirement , 100% EAS guaranteed with full
function reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter
z
Networking DC-DC Power System
z
Load Switch
Features
TO
–
252 Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
100
±
20
1
5
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
11
A
64
30
6
A
EAS
Single Pulse Avalanche Energy
3
mJ
A
I
AS
Avalanche Current
P
D
@T
C
=25
℃
P
D
@T
C
=
100
℃
Total Power Dissipation
3
Total Power Dissipation
3
60
30
W
W
℃
℃
T
STG
T
J
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 1
7
0
-55 to 1
7
0
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
50
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
2.5
R
θ
JC
—
Rev 2: Apr.2019
Page 1
WSF3410
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
5
A
0.098
90
—
V/
℃
m
Ω
m
Ω
V
1
00
1
3
0
—
R
DS(ON)
Static Drain-Source On-Resistance
2
1
15
V
GS
=4.5V , I
D
=
2
A
—
V
GS(th)
Gate Threshold Voltage
1.5
—
2.0
-4.57
—
2.5
—
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
—
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
—
±
100
—
nA
S
V
DS
=5V , I
D
=
5
A
—
13
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
2
4
Ω
30
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
12
3.4
2.9
21
V
DS
=
50
V , V
GS
=10V , I
D
=
5
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
4.9
5.8
13
6.4
8.7
24
19
60
30
—
—
V
DD
=
3
0V , V
GS
=10V , R
G
=
6
Ω
I
D
=1A
, R
L
=30Ω
10
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
32
—
16
C
iss
C
oss
C
rss
Input Capacitance
730
45
25
940
80
1250
115
75
V
DS
=
30
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
50
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
25
—
—
mJ
V
DD
=25V , L=0.
5
mH , I
AS
=
6
A
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
5
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
64
A
—
—
1.
1
61
V
V
GS
=0V , I
S
=
5
A , T
J
=25
℃
33
47
nS
nC
I
F
=
5
A , dI/dt=100A/µs , T
J
=25
℃
61
87
Q
rr
113
Note :
1.
2
The data tested by surface mounted on a 1 inch
FR-4 board with 2OZ copper
,t
≦
10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.
5
mH,I
AS
=
6A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev 2: Apr.2019
Page
2
WSF3410
N-Ch MOSFET
Typical Characteristics
25
V
GS
=10V
V
GS
=7V
V
GS
=5V
I
D
=5A
20
15
10
5
V
GS
=4.5V
V
GS
=3V
0
0
2
4
6
V
DS
, Drain-to-Source Voltage (V)
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
10
8
V
DS
=50V
I
D
=5A
6
T =150
T =25
℃
J
℃
J
4
2
0
0.00
0.25
0.50
0.75
1.00
V
SD
, Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
2.5
2.0
1.5
1.0
0.5
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
J
)
T ,
Junction Temperature (
J
)
℃
℃
Fig.6 Normalized R
DSON
vs. T
J
Fig.5 Normalized V
GS(th)
vs. T
J
Rev 2: Apr.2019
Page
3
WSF3410
N-Ch MOSFET
10000
1000
100
100.00
10.00
1.00
F=1.0MHz
Ciss
10us
100us
1ms
10ms
100ms
DC
Coss
Crss
21
0.10
T =25
℃
C
Single Pulse
10
0.01
1
5
9
13
17
25
0.1
1
10
100
1000
V
DS
(V)
V
DS
, Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
P
DM
T
ON
T
SINGLE
D =
T
ON
/T
T
Jpeak
=
T
C
+P
D
M
XR
θJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Switching Waveform
Rev 2: Apr.2019
Page
4
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