Winsok-Semicon-WSF4022
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Download  | Winsok-Semicon-WSF4022 |
WSF4022
Dual N-Ch MOSFET
General Description
Product Summery
B
VDSS
40V
R
DSON
I
D
20A
The WSF4022 is the highest performance trench
Dual N-Ch MOSFET with extreme high cell
density,which provide excellent R
DSON
and gate
charge for
most of the synchronous buck converter
applications .
21m
Ω
Applications
For Fan Pre-driver H-Bridge.
Motor Control.
Synchronous Rectification.
The WSF4022 meet the RoHS and Green
Product
requirement 100% EAS guaranteed with
full function
reliability approved.
Features
TO-252-4L Pin Configuration
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
100% EAS Guaranteed
Green Device Available
Absolute Maximum Ratings
@TA=25
℃
unless otherwise noted
Parameter
Drain-Source Voltage
Rating
40
Symbol
Units
V
V
DS
±20
V
V
GS
I
D
Gate-Source Voltage
T
C
=25°C
20*
A
Drain Current (Continuous) *AC
Drain Current (Continuous) *AC
Drain Current (Continuous) *AC
Drain Current (Continuous) *AC
Pulsed Drain Current
T
C
=100°C
T
A
=25°C
T
A
=70°C
T
C
=25°C
20*
12.2
10.2
80*
A
I
D
A
I
D
A
I
D
a
A
I
DM
b
mJ
A
Single Pulse Avalanche Energy
Avalanche Current
L=0.5mH
L=0.5mH
T
C
=25°C
T
C
=100°C
T
A
=25°C
T
A
=70°C
25
17.8
39.4
19.7
6.4
E
AS
b
I
AS
W
W
W
W
℃
℃
℃
/W
℃
/W
P
D
P
D
Maximum Power Dissipation
Maximum Power Dissipation
Power Dissipation
P
D
4.2
P
D
Power Dissipation
175
T
J
Operating Junction Temperature Range
Operating Temperature/ Storage Temperature
Thermal Resistance Junction-Ambient
Thermal Resistance Junction to Case
-55~175
60
T
STG
b
R
θ
JA
Steady Stat
e
c
3.8
R
θ
JC
Note *
：
Limited by package.
Note a
：
Pulse width limited by max. junction temperature.
Note b
：
UIS tested and pulse width limited by maximum junction temperature 175
℃
(initial temperature Tj=25
℃
).
Note c
：
Surface Mounted on 1in2 pad area, t =999sec.
Dec.2014
Page
1
WSF4022
Dual N-Ch MOSFET
Electrical Characteristics
@T
A
=25
℃
unless otherwise noted
Conditions
Symbol
Static
V
(BR)DSS
I
DSS
Parameter
Min. Typ. Max. Unit
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Zero Gate Voltage Drain Current
Gate Leakage Current
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= 32V, V
GS
= 0V
V
DS
= 32V, V
GS
= 0V, T
J
=85°C
V
GS
= ±20V, V
DS
= 0V
V
GS
= V
DS
, I
DS
= 250µA
V
GS
= 10V, I
D
= 10A
V
µA
µA
nA
V
40
1
30
I
DSS
I
GSS
±100
2.5
21
Gate Threshold Voltage
V
GS(th)
1.1 1.6
m
Ω
m
Ω
16
18
d
Drain-Source On-state Resistance
R
DS(on)
V
GS
= 4.5V, I
D
= 5A
25
Gate Charge
e
Qg
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
nC
nC
nC
7.5
V
DS
=20V,V
GS
=4.5V, I
D
=10A
V
GS
=0V, V
DS
=20V, f=1MHz
Qgs
3.24
2.75
Qgd
Dynamic
e
Input Capacitance
pF
pF
pF
ns
ns
ns
ns
Ciss
815
95
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Coss
Crss
60
td (on)
tr
7.8
6.9
22.4
4.8
V
DD
=20V, V
GEN
=10V,
I
DS
=1A,R
G
=6
Ω
,R
L
=20
Ω
.
Turn-off Delay Time
Turn-off Fall Time
td(off)
tf
Diode
d
Diode Forward Voltage
Input Capacitance
V
ns
nC
I
SD
=1A, V
GS
=0V
0.75 1.1
V
SD
trr
13
I
DS
=10A, dl
SD
/dt=100A/µs
Output Capacitance
Qrr
8.7
Note d
：
Pulse test ; pulse width
≤
300µs, duty cycle
≤
2%.
ꢀ
Note e
：
Guaranteed by design, not subject to production testing.
Dec.2014
Page
2
WSF4022
Dual N-Ch MOSFET
Typical Characteristics
Drain Current
Power Dissipation
42
24
20
16
12
8
35
28
21
14
7
4
T
C
=25
o
C,V
G
=10V
T
C
=25
o
C
0
0
0
20 40 60 80
100 120 140 160 180
0
20 40 60 80
100 120 140 160 180
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
emperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
3
1
300
100
Duty = 0.5
0.2
0.1
100
µ
s
0.1
0.01
1E-3
1E-4
0.05
10
1
0.02
0.01
1ms
10ms
DC
Single Pulse
T
C
=25
o
C
R
θ
JC
:3.8
o
C/W
0.01 0.1
0.1
0.01
0.1
1
10
100 300
1E-6
1E-5
1E-4
1E-3
Square Wave Puls
e
D
uration (sec)
V
DS
– Drain – Source Voltage (V)
Dec.2014
Page
3
WSF4022
Dual N-Ch MOSFET
Typical Characteristics
Drain-Source On Resistance
Output Characteristics
35
30
25
20
15
10
5
60
V
GS
=5,6,7,8,9,10V
4V
50
40
V
GS
=4.5V
30
3.5V
V
GS
=10V
20
10
3V
0
0.0
0
10
20
30
40
50
60
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
60
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=10A
I
DS
=250
µ
A
50
40
30
20
10
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
T
j
– Junction
T
e
mperature (
°
C)
V
GS
– Gate – Source Voltage (V)
Dec.2014
Page
4
WSF4022
Dual N-Ch MOSFET
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
80
10
2.5
V
= 10V
GS
I
DS
= 10A
2.0
1.5
1.0
0.5
0.0
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 16m
Ω
0.1
0.0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25 50 75
100 125 150 175
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
1200
1000
800
600
400
200
0
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
V
DS
=20V
I
DS
=10A
Ciss
Coss
Crss
0
4
8
12
16
0
8
16
24
32
40
Q
G
–
G
ate Charge (nC)
V
DS
– Drain – Source Voltage (V)
Dec.2014
Page
5
WSF4022
Dual N-Ch MOSFET
Avalanche Test Circuit and Waveforms
N Channel
V
DS
L
V
DSX(SUS)
t
p
DUT
V
DS
I
AS
R
G
V
DD
V
DD
I
L
tp
E
AS
0.01
Ω
t
AV
Switching Time Test Circuit and Waveforms
N Channel
V
DS
R
D
V
DS
90%
DUT
V
GS
R
G
V
DD
10%
V
GS
tp
t
d
(on)
t
r
t
d
(off)
t
f
Dec.2014
Page
6
P
ackage Information
TO-252-
4
E1
5.8
A
2.18
2.39
0.2
0.086
0.094
0.008
0.028
0.215
0.024
0.035
0.245
A1
b
–
–
0.020
0.170
0.50
4.32
0.71
5.46
0.61
b3
0.018
0.018
0.210
0.180
0.250
0.150
c
c2
0.46
0.46
5.33
4.57
6.35
3.81
6
0.89
6.22
6.00
6.73
D
D1
E
6.5
0.236
0.265
E1
e
6.00
0.236
2.4
0.6
1.30 BSC
0.051 BSC
0.370
0.055
0.035
–
0.410
0.070
0.080
0.040
8
o
9.40
1.40
0.89
–
10.41
1.78
2.03
1.02
8
o
H
1.3
L
L3
L4
0
0
o
0
o
UNIT: mm
Dec.2013
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Sep.2014. Specifications
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