Winsok-Semicon-WSF40P03

WSF40P03  

P-Ch MOSFET  

General Description  

Product Summery  

The

WSF40P03

is the highest performance  

trench P-Ch MOSFET with extreme high cell  

density ,

 

which provide excellent RDSON and  

gate charge

 

for most of the small power  

switching and load

 

switch applications.  

BVDSS  

RDSON  

ID  

-30V  

18mΩ  

-40A  

Applications  

The

WSF40P03

meet the RoHS and Green  

Product requirement

 

with full function  

reliability approved.  

z

Power Magagement in Desktop  

z

DC/DC Converters.  

z

Load Switch  

Features  

TO-252

Pin Configuration  

z

Advanced high cell density Trench technology  

z

Super Low Gate Charge  

z

Excellent CdV/dt effect decline  

z

100% EAS Guaranteed  

z

Green Device Available  

Absolute Maximum Ratings  

Units  

Parameter  

Rating  

Symbol  

Drain-Source Voltage  

-30  

V

DS  

V

V

V

GS  

Gate-Sou

r

ce Voltage  

±

25  

I

D

@T

C

=25

℃  

I

D

@T

C

=100

℃  

I

D

@T

A

=25

℃  

I

D

@T

A

=70

℃  

Continuous Drain Current, V

GS

@ -10V  

Continuous Drain Current, V

GS

@ -10V  

Continuous Drain Current, V

GS

@ -10V  

Continuous Drain Current, V

GS

@ -10V  

Pulsed Drain Current  

-40  

A

-2

5

 

A

–

9.6  

–

7.7  

–

160  

28  

A

A

a

I

DM  

A

b

E

AS  

Single Pulse Avalanche Energy  

Avalanche Current  

mJ  

A

b

-20  

2.

5  

I

AS  

P

D

@T

A

=25

℃  

Total Power Dissipation  

W

℃

℃

T

STG  

T

J  

Storage

T

e

mperature Range  

-55 to 150  

-55 to 150  

Operating Junction Temperature Range  

Thermal Data  

Symbol  

Parameter  

Typ.  

—  

Max.  

Unit  

℃

/W  

℃

/W  

c

R

q

JA  

50  

Thermal Resistance Junction-Ambient  

Thermal Resistance Junction-Case  

R

θJC  

2.

9  

—  

Note a

 

Pulse width limited by max. junction temperature.  

：

Note b

 

UIS tested and pulse width limited by maximum junction temperature 150

o

C (initial temperature

T

=

25

o

C).  

：

：

j

Note c

 

Surface Mounted on 1in

2

pad area.  

Dec.2014  

Page 1  

WSF40P03  

P-Ch MOSFET  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

BV

DSS  

Parameter  

Conditions  

V

GS

=0V , I

D

=-250uA  

Min.  

-30  

—  

Typ.  

—  

Max.  

—  

Unit  

V

Drain-Source Breakdown Voltage  

BV

DSS

Temperature Coefficient  

△

BV

DSS

/△

T

J  

Reference to 25

℃

, I

D

=-1mA  

V

GS

=-10V , I

D

=-

20

A  

-0.022  

15  

—  

V/

℃  

18  

—  

d

R

DS(ON)  

Static Drain-Source On-Resistance

2  

Gate Threshold Voltage  

m

Ω

 

V

26  

V

GS

=-4.5V , I

D

=-

15

A  

—  

20  

V

GS

=V

DS

, I

D

=-250uA  

V

GS(th)  

I

DSS  

-1.

2  

-1.

6  

-2.5  

V

DS

=-24V , V

GS

=0V , T

J

=25

℃  

V

DS

=-24V , V

GS

=0V , T

J

=55

℃  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

3.5  

11  

5

-1  

-5  

Drain-Source Leakage Current  

uA  

V

GS

=

±

20V , V

DS

=0V  

I

GSS  

R

g  

Gate-Source Leakage Current  

Gate Resistance  

±

100  

—  

nA  

V

DS

=0V , V

GS

=0V , f=1MHz  

Ω

Total Gate Charge  

Q

g  

—  

V

DS

=-15

V

, V

GS

=-4.5

V

,  

I

DS

=-20A  

Gate-Source Charge  

—  

nC  

ns  

Q

gs  

Q

gd  

T

d(on)  

T

r  

5

—  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

11  

10  

20  

18  

70  

53  

V =-15

V

,

 

R

=

15

 

,  

W

DD  

L

I

DS

=-1A, V

GEN

=-10

V

,  

R =6  

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

39  

29  

W

G

e

C

iss  

Input Capacitance  

Output Capacitance  

Reverse Transfer Capacitance  

1256  

187  

115  

1633  

—  

V

GS

=0

V

,  

V

DS

=-15

V

,  

Frequency=1.0MHz  

e

pF  

C

oss  

e

C

rss  

—  

Diode Characteristics  

Symbol  

Parameter  

Conditions  

V

G

=V

D

=0V , Force Current  

V

GS

=0V , I

S

=-1A  

Min.  

—  

Typ.  

—  

Max.  

–

20  

Unit  

A

I

S  

Continuous Source Current  

Diode Forward Voltage  

d

V

SD  

—  

—  

-1.2  

V

t

rr  

Reverse Recovery Time  

Reverse Recovery Charge  

—  

—  

12  

—  

—  

nS  

nC  

I

F

=-

20

A , dI/dt=100A/µs  

Q

rr  

3.5  

：

Note d

 

Pulse test ; pulse width

≤

300 s,

 

duty cycle

≤

2%.  

m

：

Note e

 

Guaranteed by design, not subject to production testing.  

Dec.2014  

Page

2  

WSF40P03  

P-Ch MOSFET  

Typical Operating Characteristics  

Power Dissipation  

Drain Current  

45  

40  

35  

30  

25  

20  

15  

10  

5

45  

40  

35  

30  

25  

20  

15  

10  

5

T

C

=25

o

C,V

G

=-10V  

20 40 60 80

 

100 120 140 160  

T

C

=25

o

C  

0

0

0

0

20 40 60 80

 

100 120 140 160  

T

j

– Junction Temperature (°C)  

T

j

– Junction Temperature (°C)  

Safe Operation Area  

Thermal Transient Impedance  

3

1

Duty = 0.5  

0.2  

0.1  

0.05  

0.1  

0.01  

1E-3  

1E-4  

0.02  

0.01  

Single Pulse  

R

q

JC

:2.9

o

C/W  

1E-6 1E-5 1E-4 1E-3  

0.01  

0.1  

-V

DS

– Drain – Source Voltage (V)  

Square Wave Pulse Duration (sec)  

Dec.2014  

Page

3  

WSF40P03  

P-Ch MOSFET  

Typical Operating Characteristics(Cont.)  

Output Characteristics  

Drain-Source On Resistance  

100  

45  

40  

35  

30  

25  

20  

15  

10  

5

80  

V

G

S

=-6,-7,-8,-9,-10V  

V

G

S

=-4.5V  

-5V  

60  

-4.5V  

40  

-4V  

V

G

S

=-10V  

20  

0

-3.5V  

-3V  

4

0

1

2

3

5

6

0

10  

20  

30  

40  

50  

-V

DS

– Drain – Source Voltage (V)  

-I

D

– Drain Current (A)  

Gate Charge  

Capacitance  

1800  

1600  

1400  

1200  

1000  

800  

600  

400  

200  

0

10  

9

8

7

6

5

4

3

2

1

0

Frequency=1MHz  

V

DS

= -15V  

I

DS

= -20A  

Ciss  

Coss  

Crss  

0

5

10  

15  

20  

25  

30  

0

4

8

12  

16  

20  

24  

-V

DS

– Drain-Source Voltage (V)  

Q

G

– Gate Charge (nC)  

Dec.2014  

Page

4  

WSF40P03  

P-Ch MOSFET  

Typical Operating Characteristics(Cont.)  

Transfer Characteristics  

60  

50  

40  

30  

20  

T

=

125

o

C  

j

10  

T

=

25

o

C  

j

0

1

2

3

4

5

6

7

-V

GS

– Gate-Source Voltage (V)  

Dec.2014  

Page

5

 

Attention

ꢀ

 

1,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

do

ꢀ

not

ꢀ

have

ꢀ

specifications

ꢀ

that

ꢀ

can

ꢀ

handle

ꢀ  

applications

ꢀ

that

ꢀ

require

ꢀ

extremely

ꢀ

high

ꢀ

levels

ꢀ

of

ꢀ

reliability,

ꢀ

such

ꢀ

as

ꢀ

life

Ͳ

support

ꢀ

systems,

ꢀ

aircraft’s

ꢀ

control

ꢀ

systems,

ꢀ

or

ꢀ  

other

ꢀ

applications

ꢀ

whose

ꢀ

failure

ꢀ

can

ꢀ

be

ꢀ

reasonably

ꢀ

expected

ꢀ

to

ꢀ

result

ꢀ

in

ꢀ

serious

ꢀ

physical

ꢀ

and/or

ꢀ

material

ꢀ

damage.

ꢀ ꢀ  

Consult

ꢀ

with

ꢀ

your

ꢀ

Winsok

ꢀ

power

ꢀ

representative

ꢀ

nearest

ꢀ

you

ꢀ

before

ꢀ

using

ꢀ

any

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ  

contained

ꢀ

herein

ꢀ

in

ꢀ

such

ꢀ

applications.

ꢀ  

2,Winsok

ꢀ

power

ꢀ

assumes

ꢀ

no

ꢀ

responsibility

ꢀ

for

ꢀ

equipment

ꢀ

failures

ꢀ

that

ꢀ

result

ꢀ

from

ꢀ

using

ꢀ

products

ꢀ

at

ꢀ

values

ꢀ

that

ꢀ

exceed,

ꢀ ꢀ  

even

ꢀ

momentarily,

ꢀ

rated

ꢀ

values

ꢀ

(such

ꢀ

as

ꢀ

maximum

ꢀ

ratings,

ꢀ

operating

ꢀ

condition

ꢀ

ranges,

ꢀ

or

ꢀ

other

ꢀ

parameters)

ꢀ

listed

ꢀ

in

ꢀ  

products

ꢀ

specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein.

ꢀ  

3,

ꢀ

Specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

stipulate

ꢀ

the

ꢀ

performance,

ꢀ  

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

in

ꢀ

the

ꢀ

independent

ꢀ

state,

ꢀ

and

ꢀ

are

ꢀ

not

ꢀ

guarantees

ꢀ

of

ꢀ

the

ꢀ  

performance,

ꢀ

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

as

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ  

equipment.

ꢀ

T

o

ꢀ

verify

ꢀ

symptoms

ꢀ

and

ꢀ

states

ꢀ

that

ꢀ

cannot

ꢀ

be

ꢀ

evaluated

ꢀ

in

ꢀ

an

ꢀ

independent

ꢀ

device,

ꢀ

the

ꢀ

customer

ꢀ

should

ꢀ

always

ꢀ  

evaluate

ꢀ

and

ꢀ

test

ꢀ

devices

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ

equipment.

ꢀ  

4,

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ

strives

ꢀ

to

ꢀ

supply

ꢀ

high

Ͳ

quality

ꢀ

high

Ͳ

reliability

ꢀ

products.

ꢀ

However,

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ  

semiconductor

ꢀ

products

ꢀ

fail

ꢀ

with

ꢀ

some

ꢀ

probability.

ꢀ

It

ꢀ

is

ꢀ

possible

ꢀ

that

ꢀ

these

ꢀ

probabilistic

ꢀ

failures

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

accidents

ꢀ  

or

ꢀ

events

ꢀ

that

ꢀ

could

ꢀ

endanger

ꢀ

human

ꢀ

lives

ꢀ

that

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

smoke

ꢀ

or

ꢀ

fire,

ꢀ

or

ꢀ

that

ꢀ

could

ꢀ

cause

ꢀ

damage

ꢀ

to

ꢀ

other

ꢀ  

property.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

adopt

ꢀ

safety

ꢀ

measures

ꢀ

so

ꢀ

that

ꢀ

these

ꢀ

kinds

ꢀ

of

ꢀ

accidents

ꢀ

or

ꢀ

events

ꢀ

cannot

ꢀ

occur.

ꢀ

Such

ꢀ  

measures

ꢀ

include

ꢀ

but

ꢀ

are

ꢀ

not

ꢀ

limited

ꢀ

to

ꢀ

protective

ꢀ

circuits

ꢀ

and

ꢀ

error

ꢀ

prevention

ꢀ

circuits

ꢀ

for

ꢀ

safe

ꢀ

design,

ꢀ

redundant

ꢀ

design,

ꢀ  

and

ꢀ

structural

ꢀ

design.

ꢀ  

5,In

ꢀ

the

ꢀ

event

ꢀ

that

ꢀ

any

ꢀ

or

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products(including

ꢀ

technical

ꢀ

data,

ꢀ

services)

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

are

ꢀ  

controlled

ꢀ

under

ꢀ

any

ꢀ

of

ꢀ

applicable

ꢀ

local

ꢀ

export

ꢀ

control

ꢀ

laws

ꢀ

and

ꢀ

regulations,

ꢀ

such

ꢀ

products

ꢀ

must

ꢀ

not

ꢀ

be

ꢀ

exported

ꢀ

without

ꢀ  

obtaining

ꢀ

the

ꢀ

export

ꢀ

license

ꢀ

from

ꢀ

the

ꢀ

authorities

ꢀ

concerned

ꢀ

in

ꢀ

accordance

ꢀ

with

ꢀ

the

ꢀ

above

ꢀ

law.

ꢀ  

6,

ꢀ

No

ꢀ

part

ꢀ

of

ꢀ

this

ꢀ

publication

ꢀ

may

ꢀ

be

ꢀ

reproduced

ꢀ

or

ꢀ

transmitted

ꢀ

in

ꢀ

any

ꢀ

form

ꢀ

or

ꢀ

by

ꢀ

any

ꢀ

means,

ꢀ

electronic

ꢀ

or

ꢀ

mechanical,

ꢀ  

including

ꢀ

photocopying

ꢀ

and

ꢀ

recording,

ꢀ

or

ꢀ

any

ꢀ

information

ꢀ

storage

ꢀ

or

ꢀ

retrieval

ꢀ

system,

ꢀ

or

ꢀ

otherwise,

ꢀ

without

ꢀ

the

ꢀ

prior

ꢀ  

written

ꢀ

permission

ꢀ

of

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ  

7,

ꢀ

Information

ꢀ

(including

ꢀ

circuit

ꢀ

diagrams

ꢀ

and

ꢀ

circuit

ꢀ

parameters)

ꢀ

herein

ꢀ

is

ꢀ

for

ꢀ

example

ꢀ

only;

ꢀ

it

ꢀ

is

ꢀ

not

ꢀ

guaranteed

ꢀ

for

ꢀ  

volume

ꢀ

production. Winsok

ꢀ

power

ꢀ

believes

ꢀ

information

ꢀ

herein

ꢀ

is

ꢀ

accurate

ꢀ

and

ꢀ

reliable,

ꢀ

but

ꢀ

no

ꢀ

guarantees

ꢀ

are

ꢀ

made

ꢀ

or

ꢀ  

implied

ꢀ

regarding

ꢀ

its

ꢀ

use

ꢀ

or

ꢀ

any

ꢀ

infringements

ꢀ

of

ꢀ

intellectual

ꢀ

property

ꢀ

rights

ꢀ

or

ꢀ

other

ꢀ

rights

ꢀ

of

ꢀ

third

ꢀ

parties.

ꢀ  

8,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

information

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ

notice

ꢀ

due

ꢀ

to

ꢀ

product/technology

ꢀ  

improvement,etc.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

refer

ꢀ

to

ꢀ

the

ꢀ

“Delivery

ꢀ

Specification”

ꢀ

for

ꢀ

the

ꢀ

Winsok

ꢀ

power

ꢀ

product

ꢀ

that

ꢀ

you

ꢀ ꢀ  

Intend

ꢀ

to

ꢀ

use.

ꢀ  

9,

ꢀ

this

ꢀ

catalog

ꢀ

provides

ꢀ

information

ꢀ

as

ꢀ

of

ꢀ

Sep.2014. Specifications

ꢀ

and

ꢀ

information

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ  

notice.

ꢀ