Winsok-Semicon-WSF40P04
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WSF40P04
P-Ch MOSFET
General Description
Product Summery
The
WSF
4
0P04
is the highest performance
trench
P-Ch MOSFET
with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the synchronous
buck converter
applications .
BVDSS
RDSON
ID
–
4
0V
3
2
m
Ω
–
2
0
A
Applications
The
WSF
4
0P04
meet the RoHS and Green
Product requirement
100% EAS guaranteed
with full
function reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252
-3L
(D-PAK)
Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
–
4
0
±
2
0
–
2
0
–
1
6
–
28
–
2
2
28
V
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
A
A
A
I
A
R
Avalanche Current
Repetitive avalanche energy L=0.1mH
Single pulse avalanche energy L=0.3mH
Total Power Dissipation
4
A
EA
R
mJ
EAS
55
45
mJ
W
W
W
W
P
D
@T
C
=25
℃
Total Power Dissipation
4
20
P
D
@T
C
=
100
℃
P
D
@T
A
=25
℃
P
D
@T
A
=
70
℃
Power Dissipation
A
Power Dissipation
A
2.1
1.
5
T
J
T
STG
Junction and Storage Temperature Range
-55 to 1
75
℃
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
50
R
θ
JA
—
25
2.5
R
θ
JC
—
Dec.2014
Page 1
WSF40P04
P-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
4
0
—
—
—
-1
Typ.
Max.
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
—
-0.0232
3
2
—
—
42
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-
12
A
V/
℃
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
52
5
8
–
3
V
GS
=-4.5V , I
D
=-
8
A
V
GS(th)
Gate Threshold Voltage
–
2
4.6
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/
℃
-1
V
DS
=-
32
V , V
GS
=0V , T
J
=25
℃
V
DS
=-
32
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
-5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
GS
=
±
2
0
V , V
DS
=0V
V
DS
=-5V , I
D
=-
12
A
1
0
6.
0
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
Ω
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
20
2.5
4.5
5
V
DS
=-
20
V , V
GS
=-
10
V , I
D
=-1
5
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=-
20
V , V
GS
=-10V ,
R
G
=
1.6
Ω
12
20
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
4.5
840
92
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=-
2
5V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
60
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
–
1
0
–
2
0
-1
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
I
F
=-1
2
A
,
dI/dt=100A/µs
,
—
—
V
2
0
1
6
—
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
A
R
=-
12
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WSF40P04
P-Ch MOSFET
Typical Characteristics
Figure1. Power Dissipation
Figure2. Drain Current
T
J
-Junction Temperature(
℃
)
T
J
-Junction Temperature(
℃
)
Figure3. Output Characteristics
Figure4. Transfer Characteristics
Dec.2014
Page
3
WSF40P04
P-Ch MOSFET
Typical Characteristics
Figure5. Capacitance
Figure6. R
DS(ON)
vs Junction Temperature
-VDS Drain-to-Source Voltage(V)
Figure7. V
GS(th)
vs Junction Temperature
Figure8. Gate Charge Waveforms
Qg(nC)
Dec.2014
Page
4
WSF
4
0P04
P-Ch MOSFET
Typical Characteristics
Figure9. Normalized Maximum Transient Thermal Impedance
Dec.2014
Page
5
WSF
4
0P04
P-Ch MOSFET
D-Pak (TO-252AA)
(TO-252) (TO-252-3L)
Package Outline
(Dimensions are shown in millimeters (inches))
E
A
E1
c2
b3
c
b
e
SEE VIEW A
GAUGE PLANE
SEATING PLANE
L
VIEW A
TO-252-3
L
S
Y
M
B
O
L
RECOMMENDED LAND PATTERN
MILLIMETERS
MIN.
INCHES
6.25 MIN.
MAX.
2.39
0.13
0.89
5.46
MIN.
MAX.
0.094
0.005
0.035
0.215
0.024
0.035
0.245
A
2.18
–
0.086
–
A1
b
0.020
0.195
0.018
0.018
0.210
0.180
0.250
0.150
0.50
4.95
b3
6.8 MIN.
c
c2
D
0.46
0.46
5.33
4.57
6.35
3.81
0.61
0.89
6.22
6.00
6.73
6.6
D1
E
0.236
0.265
0.236
E1
e
3
M
IN.
6.00
2.29 BSC
0.090 BSC
0.370
0.035
0.035
–
0.410
0.070
0.080
0.040
8
°
9.40
0.90
0.89
–
10.41
1.78
2.03
1.02
8
°
H
2.286
L
1.5 MIN.
4.572
L3
L4
0
0
°
0
°
UNIT: mm
Note : Follow JEDEC TO-252 .
Dec.2014
Page
6
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Sep.2014. Specifications
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