Winsok-Semicon-WSF45P10
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WSF45P10
P-Ch MOSFET
General Description
Product Summery
The
WSF45P10
is the highest performance
trench P-Ch MOSFET with extreme high cell
density ,
which provide excellent R
DSON
and
gate charge
for most of the small power
switching and load
switch applications.
BV
DSS
R
DSON
I
D
-100V
44
mΩ
–
40
A
Applications
The
WSF45P10
meet the RoHS and
Green Product
requirement with full
function reliability approved.
z
Inverters
TO-2
52
Pin Configuration
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
-100
V
Gate-Source Voltage
±20
175
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
°C
°C
A
T
STG
I
S
-55 to 175
-40
T
C
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
-120**
-40
A
A
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=100°C
I
D
Continuous Drain Current
-26
136
68
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
1.1
R
q
JC
R
q
JA
°C/W
62.5
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
：
L=0.5mH
308***
mJ
* Repetitive
rating ; pulse width limiited by junction temperatur
** Drain
current is limited by junction temperature
*** VD=-80V
Dec.2014
Page 1
WSF45P10
P-Ch MOSFET
Electrical Characteristics
(T
C
=25°C Unless Otherwise Noted)
Typ.
Min.
Symbol
Parameter
Test Conditions
Unit
Max.
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
-100
–
–
–
-1
V
V
GS
=0V, I
DS
=-250
m
A
V
DS
=-100 V, V
GS
=0V
–
–
I
DSS
Zero Gate Voltage Drain Current
m
A
T
J
=85°C
–
-10
-3
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON)
R
DS(ON)
-1
–
-2
–
V
V
DS
=V
GS
, I
DS
=-250
m
A
V
GS
=±20V, V
DS
=0V
±100
55
nA
*
Drain-Source On-state Resistance
V
GS
=-10V, I
DS
=-20A
Drain-Source On-state Resistance
V
GS
=-4.5V, I
DS
=-20A
–
44
47
m
W
m
W
*
–
58.5
Diode Characteristics
V
SD
*
t
rr
Diode Forward Voltage
I
SD
=-20A, V
GS
=0V
–
–
–
-0.8
70
-1.2
V
Reverse Recovery Time
Reverse Recovery Charge
–
–
ns
nC
I
SD
=-20A,dl
SD
/dt=-100A/
m
s
Q
rr
90
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
2
5720
790
450
30
–
–
–
–
–
–
–
–
W
Input Capacitance
V
GS
=0V,
V
DS
=-20V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD
=-50V, R
G
= 6
W
,
I
DS
=-20A, V
GS
=-10V,
79
ns
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
82
69
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
125
21
–
–
–
V
DS
=-80V,V
GS
=-10V,
I
DS
=-20A
nC
45
Note * : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
Dec.2014
Page
2
WSF45P10
P-Ch MOSFET
Typical Characteristics
Output Characteristics
Drain-Source On Resistance
60
55
50
45
80
70
60
50
40
30
20
10
0
V
GS
= -4.0,-4.5,-10V
-3.5V
V
GS
=-4.5V
-3V
-2V
V
GS
=-10V
40
35
0
10
20
30
40
50
0
1
2
3
4
5
6
-V
DS
– Drain-Source Voltage (V)
-I
D
–
D
rain Current (A)
Drain-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
120
100
80
I
DS
=-20A
I
DS
=-250
m
A
60
50
40
30
0
2
4
6
8
10
12
-50 -25
0
25 50 75
100 125 150
175
-V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (°C)
Dec.2014
Page
3
WSF45P10
P-Ch MOSFET
Typical Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
=-10V
I
DS
=-20A
100
10
1
T
j
=175
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 44m
W
0.1
-50 -25
0
25 50 75
100 125 150 175
0.0 -0.2
-0.4 -0.6 -0.8 -1.0 -1.2 -1.4
T
j
– Junction
T
emperature (°C)
–
V
SD
– Source-Drain Voltage (V)
Capacitance
Gate Charge
10
11000
10000
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
Frequency=1MHz
V
DS
= -80V
I
DS
= -20A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
5
10 15 20 25 30 35 40
0
20 40 60 80 100
120 140
160
-V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
Dec.2014
Page
4
WSF45P10
P-Ch MOSFET
Typical Characteristics
Power Dissipation
Drain Current
140
120
100
80
45
40
35
30
25
20
15
10
5
60
40
20
T
C
=25
o
C
T
C
=25
o
C,V
G
=-10V
0
0
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
1000
100
10
1
it
m
i
L
)
n
o
(
s
d
R
100us
1ms
10ms
DC
T
C
=25
o
C
0.1
0.1
1
10
100
1000
-V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
R
q
JA
: 62.5
o
C/W
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration
sec
Dec.2014
Page
5
WSF45P10
P-Ch MOSFET
Package Information
TO-2
52
E
A
E1
c2
b3
c
b
e
SEE VIEW A
GAUGE PLANE
SEATING PLANE
L
VIEW A
TO-252
S
Y
M
B
O
L
RECOMMENDED LAND PATTERN
MILLIMETERS
MIN.
INCHES
6.25 MIN.
MAX.
2.39
0.13
0.89
5.46
MIN.
0.086
–
MAX.
0.094
0.005
0.035
0.215
0.024
0.035
0.245
A
2.18
–
A1
b
0.020
0.195
0.018
0.018
0.210
0.180
0.250
0.150
0.50
4.95
b3
6.8 MIN.
c
c2
D
0.46
0.46
5.33
4.57
6.35
3.81
0.61
0.89
6.22
6.00
6.73
6.6
D1
E
0.236
0.265
0.236
E1
e
3
M
IN.
6.00
2.29 BSC
0.090 BSC
0.370
0.035
0.035
–
0.410
0.070
0.080
0.040
8
°
9.40
0.90
0.89
–
10.41
1.78
2.03
1.02
8
°
H
2.286
L
1.5 MIN.
4.572
L3
L4
0
0
°
0
°
UNIT: mm
Note : Follow JEDEC TO-252 .
Dec.2014
Page
6
WSF45P10
P-Ch MOSFET
Classification Reflow Profiles
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
Preheat & Soak
100
°
C
150
°
C
60-120 seconds
150
°
C
200
°
C
60-120 seconds
Temperature min (T
smin
)
Temperature max (T
smax
)
Time (T
smin
to T
smax
) (t
s
)
Average ramp-up rate
(T
smax
to T
P
)
3
°
C/second max.
3
°
C/second max.
Liquidous temperature (T
L
)
Time at liquidous (t
L
)
183
°
C
60-150 seconds
217
°
C
60-150 seconds
Peak package body Temperature
(T
p
)*
See Classification Temp in table 1
20** seconds
See Classification Temp in table 2
30** seconds
Time (t
P
)** within 5
°
C of the specified
classification temperature (T
c
)
Average ramp-down rate (T
p
to T
smax
)
6
°
C/second max.
6
°
C/second max.
6 minutes max.
8 minutes max.
Time 25
°
C to peak temperature
* Tolerance for peak profile Temperature (T
p
) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (t
p
) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm
3
350
Package
Thickness
Volume mm
3
<350
<2.5 mm
235
°
C
220
°
C
220
°
C
220
°
C
³
2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm
3
Volume mm
3
350-2000
260
°
C
Volume mm
3
<350
260
°
C
260
°
C
250
°
C
>2000
260
°
C
245
°
C
245
°
C
1.6 mm – 2.5 mm
³
2.5 mm
250
°
C
245
°
C
Reliability Test Program
Test item
SOLDERABILITY
Method
JESD-22, B102
Description
5 Sec, 245
°
C
HOLT
PCT
TCT
JESD-22, A108
JESD-22, A102
JESD-22, A104
1000 Hrs, Bias @ 125
°
C
168 Hrs, 100
%
RH, 2atm, 121
°
C
500 Cycles, -65
°
C~150
°
C
Dec.2014
Page
8
Attention
ꢀ
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Any
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and
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all
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Winsok
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that
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handle
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applications
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that
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require
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extremely
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high
ꢀ
levels
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of
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reliability,
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such
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as
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life
Ͳ
support
ꢀ
systems,
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aircraft’s
ꢀ
control
ꢀ
systems,
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or
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whose
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can
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reasonably
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expected
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to
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result
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in
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serious
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physical
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and/or
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material
ꢀ
damage.
ꢀ ꢀ
Consult
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with
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your
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Winsok
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ꢀ
representative
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nearest
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you
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before
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using
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any
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Winsok
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products
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described
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or
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contained
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herein
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in
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such
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assumes
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responsibility
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for
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equipment
ꢀ
failures
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that
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result
ꢀ
from
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using
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products
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at
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values
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that
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exceed,
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even
ꢀ
momentarily,
ꢀ
rated
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values
ꢀ
(such
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as
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maximum
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operating
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condition
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ranges,
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or
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other
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listed
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in
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specifications
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of
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all
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Winsok
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products
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described
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herein.
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Specifications
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of
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any
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and
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all
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stipulate
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the
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performance,
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characteristics,
ꢀ
and
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functions
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of
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the
ꢀ
described
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products
ꢀ
in
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the
ꢀ
independent
ꢀ
state,
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and
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are
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not
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guarantees
ꢀ
of
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the
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performance,
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characteristics,
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and
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functions
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of
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the
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described
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products
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as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
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products
ꢀ
or
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equipment.
ꢀ
T
o
ꢀ
verify
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symptoms
ꢀ
and
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states
ꢀ
that
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cannot
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be
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evaluated
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in
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an
ꢀ
independent
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device,
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the
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customer
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should
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always
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evaluate
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and
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test
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devices
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mounted
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in
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the
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customer’s
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products
ꢀ
or
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equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
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supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
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However,
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any
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and
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all
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semiconductor
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products
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fail
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with
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some
ꢀ
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It
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is
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possible
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probabilistic
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damage
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property.
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When
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designing
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adopt
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that
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these
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of
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Such
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to
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error
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prevention
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circuits
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for
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design,
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structural
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design.
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Semiconductor
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ꢀ
7,
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Information
ꢀ
(including
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circuit
ꢀ
diagrams
ꢀ
and
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circuit
ꢀ
parameters)
ꢀ
herein
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is
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regarding
ꢀ
its
ꢀ
use
ꢀ
or
ꢀ
any
ꢀ
infringements
ꢀ
of
ꢀ
intellectual
ꢀ
property
ꢀ
rights
ꢀ
or
ꢀ
other
ꢀ
rights
ꢀ
of
ꢀ
third
ꢀ
parties.
ꢀ
8,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
information
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
ꢀ
to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
