Winsok-Semicon-WSF4N65
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WS
F
4N65
N-Ch MOSFET
General Description
Product Summery
The
WSR
4
N65F
is the highest performance trench
N-Ch MOSFET
with extreme high cell density
,
which
provide excellent RDSON and gate charge
for most
of the synchronous buck converter
applications .
I
D
R
DSON
BV
DSS
65
0V
2.6
Ω
4
A
Applications
The
WSR7N65F
meet the RoHS and Green
Product requirement
, 100% EAS guaranteed
with full
function reliability approved.
z
AC/DC Power Conversion in Switched Mode Power
Supplies (SMPS).
z
Uninterruptible Power Supply(UPS)
z
Adapter.
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252 Pin Configuration
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
65
0
±
30
4
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
.5
Continuous Drain Current, V
GS
@ 10V
1
.5
Pulsed Drain Current
1.2.5
V
GS
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
A
2.5
A
16
A
Single Pulse Avalanche Energy
1
Total Power Dissipation
1,5
EAS
128
mJ
W
℃
℃
P
D
77
T
STG
T
J
Storage
T
e
mperature Range
-55 to
150
-55 to 1
50
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62.5
1.62
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
Rev 1: May.2019
Page 1
WS
F
4N65
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
650
—
Typ.
—
Max.
—
Unit
V
BV
DSS
△
BV
DSS
/△
T
J
R
DS(ON)
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
0.6
2.6
—
V/
℃
Ω
Reference to 25
℃
, I
D
=
250u
A
V
GS
=10V , I
D
=
3.5
A
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
3.0
—
V
GS(th)
2.0
—
3.0
-4.57
—
4.0
—
1
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
—
V
DS
=
650
V , V
GS
=0V , T
J
=25
℃
V
DS
=
520
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
10
—
—
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
±
100
—
nA
S
V
GS
=
±
30
V , V
DS
=0V
5
V
DS
=
40
V , I
D
=
3.5
A
—
—
10.2
Q
g
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
DS
=
52
0V , V
GS
=10V , I
D
=
7
A
nC
2.3
Q
gs
Q
gd
T
d(on)
T
r
2.1
15.5
13
V
DD
=
30
0V , V
GS
=10V ,
R
G
=
25
Ω
,
I
D
=1
0
A
.
ns
—
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
40
16
550
46
—
—
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=
25
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
2.3
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
4
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,2,5
Pulsed Source Current
1,2
Diode Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
16
1.
4
—
A
—
—
V
V
GS
=0V , I
S
=
7
A , T
J
=25
℃
454
—
nS
nC
I
F
=
7
A , dI/dt=
40
A/µs , T
J
=25
℃
2076
Q
rr
—
—
Notes:
Note
1
：
l
i
m
ited by maximum junction temperature.
Note
2
：
Bond wire current limit.
Note
3
：
V
DS
=5
2
0V, I
D
=
4
A.
Note
4
：
I
D
=0.5A, V
DD
=50V, T
j
=25
°
C.
Note
5
：
Re
p
etitive Rating : Pulse width limited by maximum junction temperature.
Rev 1: May.2019
Page
2
WS
F
4N65
N-Ch MOSFET
Typical Characteristics
Figure 1 Output Characteristics
Figure 3 Rdson-ID Characteristics
Figure 4 Body diode Characteristics
Figure 2 Transfer Characteristics
Rev 1: May.2019
Page
3
WS
F
4N65
N-Ch MOSFET
Typical Characteristics
Figure 5 Rdson-
Tj
Relation
Figure 6 BVDSS vs Junction Temperature
Figure 8
VGS
vs QG Characteristics
Figure 7 Capacitance vs Vds
Rev 1: May.2019
Page
4
WS
F
4N65
N-Ch MOSFET
Typical Characteristics
Figure 9 Safe Operation Area
Figure 10 Maximum current attenuation
Figure 11 Normalized Maximum Transient Thermal Impedance
Rev 1: May.2019
Page
5
Attention
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1,
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Any
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all
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that
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can
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handle
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applications
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
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systems,
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aircraft’s
ꢀ
control
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systems,
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or
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other
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applications
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whose
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failure
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can
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be
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reasonably
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expected
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to
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result
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in
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serious
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physical
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and/or
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material
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damage.
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Consult
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with
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your
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representative
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nearest
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you
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before
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for
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failures
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at
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even
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momentarily,
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rated
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values
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(such
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as
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maximum
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ratings,
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operating
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condition
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ranges,
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or
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performance,
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characteristics,
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and
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in
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independent
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in
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o
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power
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Semiconductor
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CO.,
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LTD.
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Ͳ
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adopt
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due
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improvement,etc.
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When
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to
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the
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“Delivery
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Specification”
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this
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as
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Sep.2014. Specifications
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information
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herein
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are
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subject
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to
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change
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without
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notice.
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