Winsok-Semicon-WSF50P10
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WSF50P10
P-Ch MOSFET
General Description
Product Summery
The
WSF50P10
is the highest performance
trench P-ch
MOSFET with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the synchronous buck
converter applications
.
BVDSS
RDSON
ID
–
10
0V
40
m
Ω
–
34
A
Applications
The
WSF50P10
meet the RoHS and Green
Product requirement,100%
EAS guaranteed
with full
function reliability approved.
z
Power Management for Industrial DC / DC
Converters.
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252 Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
–
10
0
±
20
–
34
Units
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
Continuous Drain Current, -V
GS
@ -10V
Continuous Drain Current, -V
GS
@ -10V
A
–
22
A
–
136
a
A
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
c
182
E
AS
mJ
A
c
–
27
I
AS
96
P
D
@T
C
=25
℃
Total Power Dissipation
W
℃
℃
T
STG
T
J
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
Thermal Data
Symbol
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
b
60
R
θ
JA
Thermal Resistance Junction-Ambient
Thermal Resistance Junction-Case
1.3
R
θ
JC
—
Note a
：
Pulse width is limited by max. junction temperature.
Note b
：
Surface Mounted on 1in
2
pad area.
Note c
：
UIS tested and pulse width are limited by maximum junction temperature 150
o
C(initial temperature T
J
=25
o
C).
Rev 2: May.2019
Page 1
WSF50P10
P-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
10
0
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-
18
A
-0.021
32
—
V/
℃
40
—
d
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
38
51
V
GS
=-
4.5
V , I
D
=-
10
A
—
–
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
–
2.0
–
3.0
V
GS(th)
Gate Threshold Voltage
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
4.08
—
—
mV/
℃
-1
V
DS
=-
80
V , V
GS
=0V , T
J
=25
℃
V
DS
=-
80
V , V
GS
=0V , T
J
=
8
5
℃
I
DSS
Drain-Source Leakage Current
uA
nA
-30
±
100
—
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
e
56
Q
g
e
9.5
14.5
17
V
DS
=-
3
0V , V
GS
=-
10
V , I
D
=-
18
A
nC
Q
gs
—
e
Q
gd
—
e
T
d(on)
—
T
r
e
9
—
V
DD
=-
30
V , V
GS
=-10V ,
ns
e
R
G
=
6
Ω
, I
D
=-1A
,R
L
=30Ω.
T
d(off)
Turn-Off Delay Time
Fall Time
83
34
—
T
f
e
—
e
2480
268
3207
—
C
iss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
e
V
DS
=-
5
0
V , V
GS
=0V , f=1MHz
pF
C
oss
e
126
C
rss
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
–
1
8
Unit
A
VG=VD=0V ,
Force Current
V
GS
=0V , I
S
=-1
8
A , T
J
=25
℃
I
S
Continuous Source Current
Diode Forward Voltage
V
SD
—
—
-1.2
V
Note d
：
Pulse test ; pulse width
≤
300
µ
s, duty cycle
≤
2%.
Note e
：
Guaranteed by design, not subject to production testing.
Rev 2: May.2019
Page
2
WSF50P10
P-Ch MOSFET
Typical Characteristics
Power Dissipation
Drain Current
105
90
75
60
45
30
15
0
36
32
28
24
20
16
12
8
4
T
C
=25
o
C,V
G
=-10V
T
C
=25
o
C
20 40 60 80
100 120 140 160
0
0
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
e
mperature (°C)
T
j
– Junction
T
e
mperature
Safe Operation Area
Thermal Transient Impedance
300
100
2
1
Duty = 0.5
0.2
0.1
100
µ
s
0.1
0.01
1E-3
1E-4
0.05
1ms
10
1
0.02
0.01
10ms
DC
Single Pulse
T
C
=25
o
C
R
θ
JC
:1.3
o
C/W
0.1
0.5
1
10
100
300
1E-6
1E-5
1E-4
1E-3
0.01
0.1
-V
DS
– Drain – Source Voltage (V)
Square Wave Puls
e
D
uration (sec)
Page
3
Rev 2: May.2019
WSF50P10
P-Ch MOSFET
Output Characteristics
Drain-Source On Resistance
70
60
50
40
30
20
10
70
60
50
40
30
20
10
0
V
GS
=-4.5,-5,-6,-7,
-8,-9,-10V
-4V
V
GS
=-4.5V
V
GS
=-10V
-3.5V
-3V
5
0
10
20
30
40
50
60
0
1
2
3
4
6
-V
DS
– Drain – Source Voltage (V)
-I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
180
150
120
90
I
DS
=-18A
I
DS
=-250
µ
A
60
30
0
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
-V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (°C)
Rev 2: May.2019
Page
4
WSF50P10
P-Ch MOSFET
Source-Drain Diode Forward
Drain-Source On Resistance
2.5
2.0
1.5
1.0
0.5
0.0
100
10
1
V
GS
= -10V
I
DS
= -18A
T
j
=150
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 32m
Ω
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (°C)
-V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
3600
3200
2800
2400
2000
1600
1200
800
10
Frequency=1MHz
V
DS
= -50V
I
DS
= -18A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
5
400
0
0
10 15 20 25 30 35 40
0
10
20
30
40
50
60
-V
DS
– Drain-Source Voltage (V)
Q
G
–
G
ate Charge (nC)
Rev 2: May.2019
Page
5
WSF50P10
P-Ch MOSFET
Transfer Characteristics
40
35
30
25
20
15
10
5
T
j
=25
o
C
T
j
=125
o
C
0
1
2
3
4
5
6
-V
GS
– Gate-Source Voltage
Rev 2: May.2019
Page
6
Attention
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1,
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Any
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and
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all
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described
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that
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can
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handle
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applications
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
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systems,
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aircraft’s
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control
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systems,
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or
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other
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whose
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failure
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can
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be
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reasonably
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expected
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to
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result
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in
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serious
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physical
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and/or
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material
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damage.
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Consult
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with
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your
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representative
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nearest
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you
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before
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using
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described
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contained
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in
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for
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at
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even
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momentarily,
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rated
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(such
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maximum
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operating
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condition
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ranges,
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or
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listed
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in
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of
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of
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stipulate
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the
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performance,
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characteristics,
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functions
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the
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described
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in
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the
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independent
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state,
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are
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not
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of
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as
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mounted
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in
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the
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customer’s
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products
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equipment.
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T
o
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verify
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symptoms
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and
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states
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in
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evaluate
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test
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devices
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mounted
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in
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the
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customer’s
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or
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Winsok
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power
ꢀ
Semiconductor
ꢀ
CO.,
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LTD.
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strives
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supply
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Ͳ
quality
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semiconductor
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fail
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is
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probabilistic
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could
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damage
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to
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other
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property.
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When
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designing
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equipment,
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adopt
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safety
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measures
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so
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that
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these
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kinds
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of
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Such
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include
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to
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error
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for
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redundant
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design,
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and
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structural
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design.
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5,In
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concerned
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with
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Semiconductor
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Information
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(including
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circuit
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diagrams
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and
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circuit
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parameters)
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herein
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for
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described
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herein
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to
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change
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without
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notice
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due
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to
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product/technology
ꢀ
improvement,etc.
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When
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designing
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equipment,
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refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
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the
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Winsok
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power
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product
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that
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you
ꢀ ꢀ
Intend
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to
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use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
