Winsok-Semicon-WSF70P02
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WSF70P02
P-Ch MOSFET
General Description
Product Summery
The
WSF70P02
is the highest performance
trench
P-Ch MOSFET
with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the synchronous buck
converter applications
.
BVDSS
RDSON
ID
6.8
m
Ω
–
2
0V
–
70
A
Applications
The
WSF70P02
meet the RoHS and Green
Product requirement
, 100% EAS
guaranteed with full
function reliability
approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252 Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
–
2
0
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
Pulsed Drain Current
2
V
V
±
12
–
70
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
A
-36
A
–
200
A
EAS
Single Pulse Avalanche Energy
3
360
mJ
A
I
AS
Avalanche Current
Total Power Dissipation
4
-55.4
80
P
D
@T
C
=25
℃
W
T
STG
T
J
Storage
T
e
mperature Range
-55 to 150
-55 to 150
℃
℃
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
75
R
θ
JA
—
40
4.2
R
θ
JC
—
Rev1.0 Mar. 2022
Page 1
WSF70P02
P-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
2
0
—
Typ.
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
—
-0.018
6.8
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=
-4.5V
, I
D
=-
15
A
—
V/
℃
9.0
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
8.2
11
–
1
.
2
—
V
GS
=-
2
.5V , I
D
=-1
0
A
—
V
GS(th)
Gate Threshold Voltage
–
0.4
—
–
0
.6
2.94
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
—
1
V
DS
=-
20
V , V
GS
=0V , T
J
=25
℃
V
DS
=-2
0
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
GS
=
±
12
V , V
DS
=0V
45
V
DS
=-5V , I
D
=-
10
A
—
Q
g
—
63
—
V
DS
=-15V , V
GS
=-4.5V , I
D
=-1
0
A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
9.1
13
—
—
—
Turn-On Delay Time
Rise Time
—
16
—
V
DD
=-1
0
V , V
GS
=-
4.5
V ,
R
G
=3.3
Ω
, I
D
=-1
0
A
—
77
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
195
186
5783
520
445
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-1
0
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
—
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
Single Pulse Avalanche Energy
5
120
—
—
mJ
V
DD
=-
10
V , L=0.
5
mH , I
AS
=-
50
A
EAS
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
–
70
–
200
-1.2
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
IF=-1
0
A , dI/dt=100A/µs ,
T
J
=25
℃
—
—
V
—
31
22
nS
nC
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-
10
V,V
GS
=-
4.5
V,L=0.
5
mH,I
AS
=-
5
0
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev1.0 Mar. 2022
Page 1
WSF70P02
P-Ch MOSFET
Typical Characteristics
20
16
12
8
I
D
=-14A
4
0
1
3
4
5
-V
GS
(V)
Fig.1 Typical Output Characteristics
Fig.2 On-Resistance vs. G-S Voltage
12
9
T
J
=150
℃
T
J
=25
℃
6
3
0
0
0.3
0.6
0.9
1.2
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
1.8
1 . 8
1 . 4
1 . 0
0 . 6
0 . 2
1.4
1
0.6
0.2
– 5 0
0
50
100
150
-50
0
50
100
150
T
J
, J
u n c t i o n
T e m
p
℃
e
)
r a
Tj ,Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Rev1.0 Mar. 2022
Page 1
WSF70P02
P-Ch MOSFET
10000
1000
100
Ciss
Coss
Crss
F=1.0MHz
10
1
5
9
13
17
21
V
DS
Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
0.1
DUTY=0.5
0.2
0.1
0.05
0.02
0.01
0.01
0.001
S
I
NGLE PULSE
P
DM
T
ON
T
D = T
ON
/T
T
J
peak = T
A
+ P
DM
x R
θJA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Rev1.0 Mar. 2022
Page 1
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