Winsok-Semicon-WSF90N10
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WSF
9
0N10
N-Ch MOSFET
General Description
Product Summery
The
WSF
9
0N10
is the highest performance
trench
N-Ch MOSFET
with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the synchronous buck
converter applications
.
BV
DSS
R
DSON
6
m
Ω
I
D
9
0
A
100V
Applications
The
WSF
9
0N10
meet the RoHS and Green
Product requirement
,1
00% EAS guaranteed
with full
function reliability approved.
z
Power Management in TV Converter.
z
DC-DC Converter
z
LED TV Back Light
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
252 Pin Configuration
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
100
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
2
0
V
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
,
T
C
=25°C
Avalanche Energy, Single pulse,L=0.5mH
Avalanche Current, Single pulse,L=0.5mH
9
0
50
13
10
A
A
A
A
300
180
A
EAS
mJ
A
I
AS
2
7
104
42
Total Power Dissipation
4
Total Power Dissipation
4
W
W
℃
℃
P
D
@T
C
=25
℃
P
D
@T
C
=
10
0
℃
T
STG
T
J
Storage
T
e
mperature Range
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
5
0
1
.
2
R
θ
JC
—
Rev
1.0
Jul. 20
23
Page 1
WSF
9
0N10
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
Static Drain-Source On-Resistance
2
0.096
6
—
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
15
A
V/
℃
m
Ω
m
Ω
9
R
DS(ON)
R
DS(ON)
V
GS(th)
—
Static Drain-Source On-Resistance
2
—
1
.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15
10
1
.
6
-5.5
—
V
GS
=
4.5
V , I
D
=
10
A
Gate Threshold Voltage
2
.
5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
40
V
DS
=5V , I
D
=30A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.
1
43
9.5
9.0
18
11
55
70
1
.8
—
Ω
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=
3
0V , V
GS
=10V , I
D
=
15
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
V
DD
=50V , V
GS
=10V , R
G
=3
Ω
,
I
D
=
1
A
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
2
4
00
3
55
60
V
DS
=
50
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
4
0
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
16
0
1.
3
—
A
—
—
V
V
GS
=0V , I
S
=1
5
A , T
J
=25
℃
—
48
70
nS
nC
I
F
=
1
5
A
,
dI/dt=100A/µs
,
T
J
=
25
℃
Q
rr
—
—
Note :
1.
The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.
The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating . The test condition is V
DS
=
50
V,V
GS
=10V,L=0.
5
mH,I
AS
=
2
7
A
4.
The power dissipation is limited by 150
℃
junction temperature
5.
The Min. value is 100% EAS tested guarantee.
6.
The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev
1.0
Jul. 20
23
Page
2
WSF
9
0N10
N-Ch MOSFET
Typical Operating Characteristics
Power Dissipation
Drain Current
110
100
90
80
70
60
50
40
30
20
10
0
10
0
9
0
8
0
7
0
6
0
5
0
4
0
3
0
2
0
0
V
G
=10V
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
C
– Case Temperature (°C)
T
C
– Case Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
3
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.01
1E-3
1E-4
0.02
0.01
Single Pulse
R
q
JC
: 1.2
o
C/W
1E-6 1E-5 1E-4 1E-3 0.01
0.1 0.3
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
Rev
1.0
Jul. 20
23
Page
3
WSF
9
0N10
N-Ch MOSFET
Typical Operating Characteristics
Safe Operation Area
Thermal Transient Impedance
3
1
Duty = 0.5
0.2
0.1
0.05
0.1
0.01
1E-3
0.02
0.01
Single Pulse
Mounted on 1in
2
pad
R
q
JA
:50
o
C/W
1E-4 1E-3 0.01
0.1
1
10 100
1000
V
DS
– Drain – Source Voltage (V)
Output Characteristics
Square Wave Pulse Duration (sec)
Drain-Source On Resistance
200
18
V
G
S
=5,6,7,8,9,10V
15
4.5V
4V
160
120
80
40
0
V
G
S
=4.5V
12
9
6
3.5V
V
G
S
=10V
3
0
3V
3
0
1
2
4
5
0
30
60
90
120
150
V
DS
– Drain – Source Voltage (V)
I
D
– Drain Current (A)
Rev
1.0
Jul. 20
23
Page
4
WSF
9
0N10
N-Ch MOSFET
Typical Operating Characteristics
Gate-Source On Resistance
Gate Threshold Voltage
35
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=
15
A
I
DS
=250
m
A
30
25
20
15
10
5
0
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
V
GS
– Gate – Source Voltage (V)
Drain-Source On Resistance
T
j
– Junction Temperature (°C)
Source-Drain Diode Forward
100
10
1
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
G
S
=10V
I
DS
=
15
A
T
=
150
o
C
T
=
25
o
C
j
j
R
O
N
@
T
=25
o
C:
6.
0
m
W
j
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction Temperature (°C)
V
SD
– Source – Drain Voltage (V)
Rev
1.0
Jul. 20
23
Page
5
WSF
9
0N10
N-Ch MOSFET
Typical Operating Characteristics
Capacitance
Gate Charge
3200
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
V
DS
=50V
2800
I
DS
=
15
A
Ciss
2400
2000
1600
1200
800
Coss
400
0
Crss
0
10 20 30 40 50 60 70 80
0
6
12 18 24 30 36 42
V
DS
– Drain-Source Voltage (V)
Transfer Characteristics
Q
G
– Gate Charge (nC)
120
100
80
60
40
20
0
T
=
25
o
C
T
=
150
o
C
j
j
1
2
3
4
5
6
V
GS
– Gate-Source Voltage (V)
Rev
1.0
Jul. 20
23
Page
6
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
ꢀ
not
ꢀ
have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
ꢀ
using
ꢀ
any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
ꢀ
power
ꢀ
assumes
ꢀ
no
ꢀ
responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
ꢀ
that
ꢀ
result
ꢀ
from
ꢀ
using
ꢀ
products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
ꢀ
products
ꢀ
specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
ꢀ
3,
ꢀ
Specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
ꢀ
these
ꢀ
probabilistic
ꢀ
failures
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
that
ꢀ
could
ꢀ
endanger
ꢀ
human
ꢀ
lives
ꢀ
that
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
smoke
ꢀ
or
ꢀ
fire,
ꢀ
or
ꢀ
that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
ꢀ
error
ꢀ
prevention
ꢀ
circuits
ꢀ
for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
ꢀ
the
ꢀ
event
ꢀ
that
ꢀ
any
ꢀ
or
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products(including
ꢀ
technical
ꢀ
data,
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services)
ꢀ
described
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or
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contained
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herein
ꢀ
are
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controlled
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under
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any
ꢀ
of
ꢀ
applicable
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local
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export
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control
ꢀ
laws
ꢀ
and
ꢀ
regulations,
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such
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products
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must
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not
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be
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exported
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without
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obtaining
ꢀ
the
ꢀ
export
ꢀ
license
ꢀ
from
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the
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authorities
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concerned
ꢀ
in
ꢀ
accordance
ꢀ
with
ꢀ
the
ꢀ
above
ꢀ
law.
ꢀ
6,
ꢀ
No
ꢀ
part
ꢀ
of
ꢀ
this
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publication
ꢀ
may
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be
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reproduced
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or
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transmitted
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in
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any
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form
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or
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by
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any
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means,
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electronic
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or
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mechanical,
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including
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photocopying
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and
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recording,
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or
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any
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information
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storage
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or
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retrieval
ꢀ
system,
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or
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otherwise,
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without
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the
ꢀ
prior
ꢀ
written
ꢀ
permission
ꢀ
of
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
ꢀ
it
ꢀ
is
ꢀ
not
ꢀ
guaranteed
ꢀ
for
ꢀ
volume
ꢀ
production. Winsok
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power
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believes
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information
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herein
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is
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accurate
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and
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reliable,
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but
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no
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guarantees
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are
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made
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or
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implied
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regarding
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its
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use
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or
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any
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infringements
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of
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intellectual
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property
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rights
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or
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other
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rights
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of
ꢀ
third
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parties.
ꢀ
8,
ꢀ
Any
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and
ꢀ
all
ꢀ
information
ꢀ
described
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or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
ꢀ
to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
