Winsok-Semicon-WSK140N08

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Winsok-Semicon-WSK140N08
WSK140N08  
N-Ch MOSFET  
Product Summery  
General Description  
The
WSK140N08
is the highest performance  
trench
N-Ch MOSFET
with extreme high  
cell density ,
 
which provide excellent  
I

D  

R

DSON  

4.8
m
Ω
 
BV

DSS  

80
V  
14
0
A  
RDSON and gate charge
 
for most of the  
synchronous buck converter
 
applications .  
Applications  
Power Management for Inverter Systems.  
Features  
TO
–
2
63-2
L
Pin Configuration  
z
Advanced high cell density Trench technology  
z
Super Low Gate Charge  
D
D
z
Excellent CdV/dt effect decline  
z
100% EAS Guaranteed  
G
z
Green Device Available  
S
D
G
S
Absolute Maximum Ratings  
Symbol  
Parameter  
Rating  
Unit  
Common Ratings
(T

C

=25°C Unless Otherwise Noted)  
V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  
80  
±25  
V
Gate-Source Voltage  
Maximum Junction Temperature  
Storage Temperature Range  
Diode Continuous Forward Current  
175  
°C  
°C  
A
T

STG  

I

S  

-55 to 175  
140  
T

C

=25°C  
Mounted on Large Heat Sink  
I

DM  

Pulsed Drain Current *  
T

C

=25°C  
T

C

=25°C  
55
1
**  
140  
9
1  
A
A
I

D  

Continuous Drain Current  
T

C

=100°C  
T

C

=25°C  
T

C

=100°C  
2
50  
12
5  
0.61  
62.5  
P

D  

Maximum Power Dissipation  
W
Thermal Resistance-Junction to Case  
Thermal Resistance-Junction to Ambient  
R

q
JC  

R

q
JA  

°C/W  
Avalanche Ratings  
E

AS

Avalanche Energ
y
,
S
ingle Pulsed  
Note
:
 
L=0.5mH  
762***  
mJ  
*
Repetitive rating ; pulse width limiited by junction temperatur  
** Drain
 
current is limited by junction temperature  
*** VD=64V  
Dec.2014  
Page 1  

WSK140N08  
N-Ch MOSFET  
Electrical Characteristics
 
(T

C

= 25
°
C Unless Otherwise Noted)  
Min.  
Symbol  
Parameter  
Test Conditions  
Typ.  
Max.  
Unit  
Static Characteristics  
BV

DSS

Drain-Source Breakdown Voltage  
80  
–
–
–
1
V
V

GS

=0V, I

DS

=250
m
A  
V

DS

=80V, V

GS

=0V  
–
–
I

DSS

Zero Gate Voltage Drain Current  
m
A  
T

J

=85°C  
–
10  
V

GS(th)

Gate Threshold Voltage  
I

GSS

Gate Leakage Current  
R

DS(ON)  

Diode Characteristics  
2.0  
–
3.0  
–
4.0  
±100  
6.0  
V
V

DS

=V

GS

, I

DS

=250
m
A  
V

GS

=±25V, V

DS

=0V  
nA  
*
Drain-Source On-state Resistance
 
V

GS

=10V, I

DS

=7
0
A  
–
4.8  
m
W  
V

SD  

t

rr  

*
Diode Forward Voltage  
Reverse Recovery Time  
Reverse Recovery Charge  
I

SD

=70 A, V

GS

=0V  
–
–
–
0.8  
30  
52  
1.2  
V
–
–
ns  
nC  
I

SD

=7
0
A
, dl

SD

/dt=100A/
m
s  
Q

rr  

Dynamic Characteristics  
R

G  

C

iss  

C

oss  

C

rss  

t

d(ON)  

T

r  

Gate Resistance  
V

GS

=0V,V

DS

=0V,F=1MHz  
–
–
–
–
–
–
–
–
1.6  
468
7  
66
5  
23
5  
2
6  
–
–
–
–
–
–
–
–
W
Input Capacitance  
V

GS

=0V,  
V

DS

=25V,  
Frequency=1.0MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-on Delay Time  
Turn-on Rise Time  
V

DD

=40V, R

G

=6
W
,  
I

DS

=70A, V

GS

=10V,  
1
7  
ns  
t

d(OFF)

Turn-off Delay Time  
T

f

Turn-off Fall Time  
Gate Charge Characteristics  
4
1  
5
3  
Q

g  

Q

gs  

Q

gd  

Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
–
–
–
11
5  
1
5  
–
–
–
V

DS

=64V, V

GS

=10V,  
I

DS

=70A  
nC  
4
4  
Note * : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.  
Dec.2014  
Page
2  

WSK140N08  
N-Ch MOSFET  
Typical Operating Characteristics  
Drain-Source On Resistance  
Output Characteristics  
240  
6.5  
6.0  
V

GS

= 5.5,6,7,8,9,10V  
210  
180  
V

GS

=10V  
5.5  
5.0  
4.5  
4.0  
3.5  
3.0  
150  
5V  
120  
4.5V  
90  
60  
4V  
30  
0
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0
40  
80  
120  
160  
200  
V
DS
– Drain – Source Voltage (V)  
I
D
–
D
rain Current (A)  
Gate-Source On Resistance  
Gate Threshold Voltage  
14  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
I

DS

=
7
0A  
I

DS

=250
m
A  
12  
10  
8
6
4
2
0
3
4
5
6
7
8
9
10  
-50 -25  
0
25 50 75
 
100 125 150 175  
V
GS
– Gate – Source Voltage (V)  
T
j
– Junction
T
e
mperature (
°
C)  
Dec.2014  
Page
3
 

WSK140N08  
N-Ch MOSFET  
Typical Operating Characteristics (Cont.)  
Drain-Source On Resistance  
Source-Drain Diode Forward  
200  
2.4  
2.2  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
V

GS

= 10V  
I

DS

= 70A  
100  
10  
1
T

j

=175

o

C  
T

j

=25

o

C  
R

ON

@T

j

=25

o

C: 4.8m
W
 
0.1  
-50 -25  
0
25 50 75
 
100 125 150 175  
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4  
T
j
– Junction
T
emperature (
°
C)  
V
SD
– Source – Drain Voltage (V)  
Capacitance  
Gate Charge  
10  
12000  
Frequency=1MHz  
V

DS

= 64V  
I

DS

= 70A  
9
8
7
6
5
4
3
2
1
0
10500  
9000  
7500  
6000  
4500  
3000  
1500  
0
Ciss  
Coss  
Crss  
0
25  
50  
75  
100  
125  
0
8
16  
24  
32  
40  
V
DS
– Drain – Source Voltage (V)  
Q
G
–
G
ate Charge (nC)  
Dec.2014  
Page
4  

WSK140N08  
N-Ch MOSFET  
Typical Operating Characteristics (Cont.)  
Drain Current  
Power Dissipation  
280  
180  
160  
240  
200  
160  
120  
80  
140  
120  
100  
80  
limited by package  
60  
40  
20  
40  
T

C

=25

o

C,V

G

=10V  
T

C

=25

o

C  
0
0
0
20 40 60 80
 
100 120 140 160 180 200  
0
20 40 60 80
 
100 120 140 160 180 200  
T
c
–  
Temperature (°C)  
T
c
–
C
ase
T
emperature (°C)  
Case  
Safe Operation Area  
1000  
100us  
1ms  
it  
100  
10  
1
m
i
L
)
n
o
(
s
d
R
10ms  
DC  
T

C

=25

o

C  
0.1  
0.01  
0.1  
1
10  
100 300  
V
DS
– Drain – Source Voltage (V)  
Thermal Transient Impedance  
1
Duty =
 
0.5  
0.2  
0.1  
0.1  
0.05  
0.01  
0.02  
0.01  
0.001  
Single  
Mounted on minimum pad  
R

q
JA

: 62.5
 

o

C/W  
0.0001  
0.1  
0.0001  
0.001  
0.01  
1
10  
S uare
 
Wave Pulse Duration
 
sec  
Dec.2014  
Page
5  

WSK140N08  
N-Ch MOSFET  
TO-263-2L  
MM  
NOM  
4.57  
INCH  
SYMBOL  
MIN  
4.40  
1.22  
2.59  
0.00  
0.77  
1.20  
0.34  
8.60  
10.00  
10.00  
MAX  
4.70  
1.32  
2.79  
0.20  
0.90  
1.36  
0.47  
8.80  
10.26  
10.20  
MIN  
0.173  
0.048  
0.102  
0.000  
0.030  
0.047  
0.013  
0.339  
0.394  
0.394  
NOM  
0.180  
0.050  
0.106  
0.004  
0.032  
0.050  
0.015  
0.343  
0.400  
0.398  
MAX  
0.185  
0.052  
0.110  
0.008  
0.035  
0.054  
0.019  
0.346  
0.404  
0.402  
A
A1  
A2  
A3  
b
1.27  
2.69  
0.10  
0.813  
1.270  
0.381  
8.70  
b1  
c
D1  
E
10.16  
10.10  
E2  
e
2.5 BSC  
0.100 BSC  
4
H
14.70  
1.17  
2.00  
1.45  
15.10  
1.27  
2.30  
1.55  
15.50  
1.40  
2.60  
1.70  
0.579  
0.046  
0.079  
0.057  
0.594  
0.050  
0.091  
0.061  
0.610  
0.055  
0.102  
0.067  
H2  
L
L1  
L2  
L4  
2.50 REF  
0.25 BSC  
0.098 REF  
0.010 BSC  
0
°
 
5
°  
5
°  
8
°  
9
°  
0
°  
5
°  
5
°  
7
°  
8
°  
1
2
7
°  
3
°  
9
°  
5
°  
1
°  
5
°  
1
°  
3
°  
Φ
P1  
DEP  
1.40  
0.05  
1.50  
0.10  
1.60  
0.20  
0.055  
0.002  
0.059  
0.004  
0.063  
0.008  
Dec.2014  
Page
6
 

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1,
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Any
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all
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applications
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extremely
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high
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of
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reliability,
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life
Ͳ
support
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aircraft’s
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control
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systems,
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whose
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reasonably
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expected
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to
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result
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in
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serious
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physical
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and/or
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material
ꢀ
damage.
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Consult
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with
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your
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representative
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nearest
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you
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before
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using
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products
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described
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or
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contained
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at
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even
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momentarily,
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rated
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values
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(such
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maximum
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operating
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condition
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ranges,
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in
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specifications
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of
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any
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all
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products
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Specifications
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stipulate
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the
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performance,
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characteristics,
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and
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functions
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of
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the
ꢀ
described
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products
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in
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the
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independent
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state,
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and
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are
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not
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guarantees
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of
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the
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performance,
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characteristics,
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and
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functions
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of
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the
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described
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products
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as
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mounted
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in
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the
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customer’s
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products
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or
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equipment.
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T
o
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verify
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symptoms
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and
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states
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that
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cannot
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be
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evaluated
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in
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an
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independent
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device,
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the
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customer
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should
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evaluate
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test
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devices
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mounted
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in
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the
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customer’s
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or
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ꢀ  
4,
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Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
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strives
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to
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supply
ꢀ
high
Ͳ
quality
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high
Ͳ
reliability
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However,
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any
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and
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all
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semiconductor
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fail
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with
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some
ꢀ
probability.
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It
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is
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possible
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that
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these
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probabilistic
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to
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or
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lives
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rise
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to
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could
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damage
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to
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other
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property.
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When
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designing
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adopt
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measures
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so
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that
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these
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kinds
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of
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Such
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but
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limited
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to
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protective
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and
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error
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prevention
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circuits
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for
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design,
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redundant
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design,
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and
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structural
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design.
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5,In
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7,
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and
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parameters)
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ꢀ
or
ꢀ
other
ꢀ
rights
ꢀ
of
ꢀ
third
ꢀ
parties.
ꢀ  
8,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
information
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ  
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ  
Intend
ꢀ
to
ꢀ
use.
ꢀ  
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ  
notice.
ꢀ