Winsok-Semicon-WSK140N08
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WSK140N08
N-Ch MOSFET
Product Summery
General Description
The
WSK140N08
is the highest performance
trench
N-Ch MOSFET
with extreme high
cell density ,
which provide excellent
I
D
R
DSON
4.8
m
Ω
BV
DSS
80
V
14
0
A
RDSON and gate charge
for most of the
synchronous buck converter
applications .
Applications
Power Management for Inverter Systems.
Features
TO
–
2
63-2
L
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
D
D
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
G
z
Green Device Available
S
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings
(T
C
=25°C Unless Otherwise Noted)
V
DSS
V
GSS
T
J
Drain-Source Voltage
80
±25
V
Gate-Source Voltage
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
175
°C
°C
A
T
STG
I
S
-55 to 175
140
T
C
=25°C
Mounted on Large Heat Sink
I
DM
Pulsed Drain Current *
T
C
=25°C
T
C
=25°C
55
1
**
140
9
1
A
A
I
D
Continuous Drain Current
T
C
=100°C
T
C
=25°C
T
C
=100°C
2
50
12
5
0.61
62.5
P
D
Maximum Power Dissipation
W
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
R
q
JC
R
q
JA
°C/W
Avalanche Ratings
E
AS
Avalanche Energ
y
,
S
ingle Pulsed
Note
:
L=0.5mH
762***
mJ
*
Repetitive rating ; pulse width limiited by junction temperatur
** Drain
current is limited by junction temperature
*** VD=64V
Dec.2014
Page 1
WSK140N08
N-Ch MOSFET
Electrical Characteristics
(T
C
= 25
°
C Unless Otherwise Noted)
Min.
Symbol
Parameter
Test Conditions
Typ.
Max.
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown Voltage
80
–
–
–
1
V
V
GS
=0V, I
DS
=250
m
A
V
DS
=80V, V
GS
=0V
–
–
I
DSS
Zero Gate Voltage Drain Current
m
A
T
J
=85°C
–
10
V
GS(th)
Gate Threshold Voltage
I
GSS
Gate Leakage Current
R
DS(ON)
Diode Characteristics
2.0
–
3.0
–
4.0
±100
6.0
V
V
DS
=V
GS
, I
DS
=250
m
A
V
GS
=±25V, V
DS
=0V
nA
*
Drain-Source On-state Resistance
V
GS
=10V, I
DS
=7
0
A
–
4.8
m
W
V
SD
t
rr
*
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
SD
=70 A, V
GS
=0V
–
–
–
0.8
30
52
1.2
V
–
–
ns
nC
I
SD
=7
0
A
, dl
SD
/dt=100A/
m
s
Q
rr
Dynamic Characteristics
R
G
C
iss
C
oss
C
rss
t
d(ON)
T
r
Gate Resistance
V
GS
=0V,V
DS
=0V,F=1MHz
–
–
–
–
–
–
–
–
1.6
468
7
66
5
23
5
2
6
–
–
–
–
–
–
–
–
W
Input Capacitance
V
GS
=0V,
V
DS
=25V,
Frequency=1.0MHz
pF
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
V
DD
=40V, R
G
=6
W
,
I
DS
=70A, V
GS
=10V,
1
7
ns
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
Gate Charge Characteristics
4
1
5
3
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
–
–
–
11
5
1
5
–
–
–
V
DS
=64V, V
GS
=10V,
I
DS
=70A
nC
4
4
Note * : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
Dec.2014
Page
2
WSK140N08
N-Ch MOSFET
Typical Operating Characteristics
Drain-Source On Resistance
Output Characteristics
240
6.5
6.0
V
GS
= 5.5,6,7,8,9,10V
210
180
V
GS
=10V
5.5
5.0
4.5
4.0
3.5
3.0
150
5V
120
4.5V
90
60
4V
30
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
40
80
120
160
200
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
14
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=
7
0A
I
DS
=250
m
A
12
10
8
6
4
2
0
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Dec.2014
Page
3
WSK140N08
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
200
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= 10V
I
DS
= 70A
100
10
1
T
j
=175
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 4.8m
W
0.1
-50 -25
0
25 50 75
100 125 150 175
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
12000
Frequency=1MHz
V
DS
= 64V
I
DS
= 70A
9
8
7
6
5
4
3
2
1
0
10500
9000
7500
6000
4500
3000
1500
0
Ciss
Coss
Crss
0
25
50
75
100
125
0
8
16
24
32
40
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
Dec.2014
Page
4
WSK140N08
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain Current
Power Dissipation
280
180
160
240
200
160
120
80
140
120
100
80
limited by package
60
40
20
40
T
C
=25
o
C,V
G
=10V
T
C
=25
o
C
0
0
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
T
c
–
C
ase
T
emperature (°C)
Case
Safe Operation Area
1000
100us
1ms
it
100
10
1
m
i
L
)
n
o
(
s
d
R
10ms
DC
T
C
=25
o
C
0.1
0.01
0.1
1
10
100 300
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
R
q
JA
: 62.5
o
C/W
0.0001
0.1
0.0001
0.001
0.01
1
10
S uare
Wave Pulse Duration
sec
Dec.2014
Page
5
WSK140N08
N-Ch MOSFET
TO-263-2L
MM
NOM
4.57
INCH
SYMBOL
MIN
4.40
1.22
2.59
0.00
0.77
1.20
0.34
8.60
10.00
10.00
MAX
4.70
1.32
2.79
0.20
0.90
1.36
0.47
8.80
10.26
10.20
MIN
0.173
0.048
0.102
0.000
0.030
0.047
0.013
0.339
0.394
0.394
NOM
0.180
0.050
0.106
0.004
0.032
0.050
0.015
0.343
0.400
0.398
MAX
0.185
0.052
0.110
0.008
0.035
0.054
0.019
0.346
0.404
0.402
A
A1
A2
A3
b
1.27
2.69
0.10
0.813
1.270
0.381
8.70
b1
c
D1
E
10.16
10.10
E2
e
2.5 BSC
0.100 BSC
4
H
14.70
1.17
2.00
1.45
15.10
1.27
2.30
1.55
15.50
1.40
2.60
1.70
0.579
0.046
0.079
0.057
0.594
0.050
0.091
0.061
0.610
0.055
0.102
0.067
H2
L
L1
L2
L4
2.50 REF
0.25 BSC
0.098 REF
0.010 BSC
0
°
5
°
5
°
8
°
9
°
0
°
5
°
5
°
7
°
8
°
1
2
7
°
3
°
9
°
5
°
1
°
5
°
1
°
3
°
Φ
P1
DEP
1.40
0.05
1.50
0.10
1.60
0.20
0.055
0.002
0.059
0.004
0.063
0.008
Dec.2014
Page
6
Attention
ꢀ
1,
ꢀ
Any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein
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do
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have
ꢀ
specifications
ꢀ
that
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can
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handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
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your
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Winsok
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power
ꢀ
representative
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nearest
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you
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before
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using
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any
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Winsok
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power
ꢀ
products
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described
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or
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contained
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herein
ꢀ
in
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such
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applications.
ꢀ
2,Winsok
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power
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assumes
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no
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responsibility
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for
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equipment
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failures
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that
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result
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from
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using
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products
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at
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values
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that
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exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
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as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
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other
ꢀ
parameters)
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listed
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in
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products
ꢀ
specifications
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of
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any
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and
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all
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Winsok
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power
ꢀ
products
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described
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or
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contained
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herein.
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3,
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Specifications
ꢀ
of
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any
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and
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all
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Winsok
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power
ꢀ
products
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described
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or
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contained
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herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
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are
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not
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guarantees
ꢀ
of
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the
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performance,
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characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
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the
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described
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products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
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should
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always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
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any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
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these
ꢀ
probabilistic
ꢀ
failures
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could
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give
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rise
ꢀ
to
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accidents
ꢀ
or
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events
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that
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could
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endanger
ꢀ
human
ꢀ
lives
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that
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could
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give
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rise
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to
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smoke
ꢀ
or
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fire,
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or
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that
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could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
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events
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cannot
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occur.
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Such
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measures
ꢀ
include
ꢀ
but
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are
ꢀ
not
ꢀ
limited
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to
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protective
ꢀ
circuits
ꢀ
and
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error
ꢀ
prevention
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circuits
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for
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safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
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the
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event
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that
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any
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or
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all
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Winsok
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power
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data,
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contained
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herein
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are
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controlled
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under
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of
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applicable
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export
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control
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laws
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and
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regulations,
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must
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be
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exported
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obtaining
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the
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export
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license
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from
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the
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authorities
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concerned
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in
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accordance
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with
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the
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above
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law.
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No
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part
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of
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Semiconductor
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CO.,
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LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
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is
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for
ꢀ
example
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only;
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it
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is
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guaranteed
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for
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volume
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production. Winsok
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herein
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reliable,
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are
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implied
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regarding
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its
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use
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any
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rights
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or
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other
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rights
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of
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parties.
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and
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all
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information
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described
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contained
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herein
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are
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subject
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to
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change
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without
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notice
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due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
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designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
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Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
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to
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use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
