Winsok-Semicon-WSP4067
| Part # | Winsok-Semicon-WSP4067 |
Download  | Winsok-Semicon-WSP4067 |
WS
P
4
067
N&
P
-Channel MOSFET
Product Summery
General Description
The WSP
4
067 is the highest performance
trench N-ch
and P-ch MOSFET with extreme
high cell
density , which provide excellent
RDSON and gate
charge for most of the
synchronous buck converter
applications .
BVDSS
4
0V
RDSON
2
1
m
Ω
ID
7
.5
A
–
5
.5
A
–
4
0V
38
m
Ω
The WSP
4
067 meet the RoHS and Green
Product requirement
, 100% EAS guaranteed
with full
function reliability approved.
Applications
z
High Frequency Point-of-Load Synchronous
Buck Converter.
z
Networking DC-DC Power System
z
Load Switch
Features
SOP-8 Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
N-Channel P-Channel
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
4
0
±
20
7
.5
6
–
4
0
±
20
–
5
.5
–
4.5
V
V
I
D
@T
C
=25
℃
A
A
I
D
@T
C
=
70
℃
30
I
DM
A
–
2
0
25
EAS
Single Pulse Avalanche Energy
3
25
1
0
2
mJ
A
I
AS
P
D
@T
C
=25
℃
T
STG
Avalanche Current
Total Power Dissipation
4
1
0
2
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
150
-55 to 150
150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
62.5
50
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
Dec.2014
Page 1
WS
P
4
067
N&
P
-Channel MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
4
0
Typ.
—
Max.
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
—
—
21
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
6
A
—
0.06
7
1
6
V/
℃
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
2
5
18
V
GS
=4.5V , I
D
=
5
A
—
2
1.5
V
GS(th)
Gate Threshold Voltage
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-5.24
—
mV/
℃
1
V
DS
=
32
V , V
GS
=0V , T
J
=
85
℃
V
DS
=
32
V , V
GS
=0V , T
J
=
8
5
℃
I
DSS
Drain-Source Leakage Current
uA
30
±
100
—
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
nA
S
V
DS
=5V , I
D
=8A
2
4
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.5
—
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
2
2
—
1
5.7
3.24
2.
75
V
DS
=
20
V , V
GS
=
10
V , I
D
=
6
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
7.8
6
.9
—
V
DD
=
2
0V , V
GS
=10V ,
—
R
G
=
6
Ω
, I
D
=
1
A
,R
L
=
20
Ω
2
2.4
4.8
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
C
iss
C
oss
C
rss
Input Capacitance
815
95
—
V
DS
=
20
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
60
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=25V , L=0.1mH , I
AS
=
16
A
1
1
.2
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
6.0
24
Unit
A
I
S
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
A
—
—
1.
1
V
V
GS
=0V , I
S
=1
.7
A
,
T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=
16
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WS
P
4
067
N&
P
-Channel MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
4
0
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-
5
.5
A
-0.03
3
0
—
V/
℃
38
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
46
62
V
GS
=-4.5V , I
D
=-
3.5
A
—
-2.0
V
GS(th)
Gate Threshold Voltage
-1.
5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-2.5
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
4.56
—
mV/
℃
–
1
V
DS
=-
32
V , V
GS
=0V , T
J
=
85
℃
V
DS
=-
32
V , V
GS
=0V , T
J
=
8
5
℃
I
DSS
Drain-Source Leakage Current
uA
—
-30
±
100
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
nA
S
V
DS
=-5V , I
D
=-
4.5
A
18
8
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
—
Ω
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
7.5
2.4
3.5
8.7
7
—
V
DS
=-
20
V , V
GS
=-
10
V , I
D
=-
5
.5
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=-
2
0V , V
GS
=-10V ,
R
G
=
6
Ω
, I
D
=-
1
A
,R
L
=
2
0Ω.
—
3
1
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
17
—
C
iss
C
oss
C
rss
Input Capacitance
668
98
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
7
2
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=-25V , L=0.1mH , I
AS
=-
18
A
1
1
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
Unit
A
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
–
5.5
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
–
20
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
-1.
1
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=-25V,V
GS
=-10V,L=0.1mH,I
AS
=-
18
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
3
WS
P
4
067
N&
P
-Channel MOSFET
N-Channel Typical Characteristics
Drain Current
Power Dissipation
2.4
9.0
7.5
6.0
4.5
3.0
1.5
0.0
2.0
1.6
1.2
0.8
0.4
T
A
=25
o
C
0.0
T
A
=25
o
C,V
G
=10V
160
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
emperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
0.2
it
m
i
L
0.1
)
n
o
(
s
d
R
0.05
0.02
0.01
0.1
0.01
1E-3
300
µ
s
1ms
1
10ms
100ms
0.1
Single Pulse
1s
DC
Mounted on 1in
2
pad
T
A
=25
o
C
R
θ
JA
:62.5
o
C/W
0.01
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10 60
Square Wave Puls
e
D
uration (sec)
V
DS
– Drain – Source Voltage (V)
Dec.2014
Page
4
WS
P
4
067
N&
P
-Channel MOSFET
Drain-Source On Resistance
Output Characteristics
30
25
20
15
10
5
30
25
20
15
10
5
V
GS
=4,5,6,7,8,9,10V
3.5V
V
GS
=4.5V
V
GS
=10V
3V
0
0.0
0
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
56
48
40
32
24
16
8
I
DS
=6A
I
DS
=250
µ
A
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
T
j
– Junction
T
e
mperature (
°
C)
V
GS
– Gate – Source Voltage (V)
Dec.2014
Page
5
WS
P
4
067
N&
P
-Channel MOSFET
Drain-Source On Resistance
Source-Drain Diode Forward
30
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
= 10V
GS
I
DS
= 6A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 16m
Ω
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
1200
1000
800
600
400
200
0
10
Frequency=1MHz
V
DS
=20V
I
DS
=6A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
4
8
12
16
0
8
16
24
32
40
Q
G
–
G
ate Charge (nC)
V
DS
– Drain – Source Voltage (V)
Dec.2014
Page
6
WS
P
4
067
N&
P
-Channel MOSFET
P
-Channel Typical Characteristics
Drain Current
Power Dissipation
2.4
6
5
4
3
2
1
0
2.0
1.6
1.2
0.8
0.4
T
A
=25
o
C
0.0
T
A
=25
o
C,V
G
=-10V
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
emperature (
°
C)
T
j
– Junction
T
e
mperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty =
0.5
0.2
0.1
0.05
300
µ
s
0.1
0.01
1E-3
0.02
0.01
1ms
1
10ms
100ms
Single Pulse
0.1
1s
DC
Mounted on 1in
2
pad
T
A
=25
o
C
R
θ
JA
: 62.5
o
C/W
0.01
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10 60
-V
DS
– Drain – Source Voltage (V)
Square Wave Puls
e
D
uration (sec)
Dec.2014
Page
7
WS
P
4
067
N&
P
-Channel MOSFET
Drain-Source On Resistance
Output Characteristics
21
18
15
12
9
80
70
60
50
40
30
20
10
V
GS
=-5,-6,-7,-8,-9,-10V
-4V
V
GS
=-4.5V
V
GS
=-10V
-3.5V
-3V
6
3
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
8
12
16
20
-I
D
–
D
rain Current (A)
-V
DS
– Drain – Source Voltage (V)
Gate Threshold Voltage
Gate-Source On Resistance
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
140
120
100
80
I
DS
=-250
µ
A
I
DS
=-5.5A
60
40
20
0
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
T
j
– Junction
T
e
mperature (
°
C)
-V
GS
– Gate – Source Voltage (V)
Dec.2014
Page
8
WS
P
4
067
N&
P
-Channel MOSFET
Drain-Source On Resistance
Source-Drain Diode Forward
20
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= -10V
I
DS
= -5.5A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 30m
Ω
0.1
0.0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (
°
C)
-V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
1000
900
800
700
600
500
400
300
200
100
0
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
V
DS
=-20V
I
DS
=-5.5A
Ciss
Coss
Crss
0
3
6
9
12
15
0
8
16
24
32
40
Q
G
–
G
ate Charge (nC)
-V
DS
– Drain – Source Voltage (V)
Dec.2014
Page
9
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
ꢀ
not
ꢀ
have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
ꢀ
using
ꢀ
any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
ꢀ
power
ꢀ
assumes
ꢀ
no
ꢀ
responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
ꢀ
that
ꢀ
result
ꢀ
from
ꢀ
using
ꢀ
products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
ꢀ
products
ꢀ
specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
ꢀ
3,
ꢀ
Specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
ꢀ
these
ꢀ
probabilistic
ꢀ
failures
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
that
ꢀ
could
ꢀ
endanger
ꢀ
human
ꢀ
lives
ꢀ
that
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
smoke
ꢀ
or
ꢀ
fire,
ꢀ
or
ꢀ
that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
ꢀ
error
ꢀ
prevention
ꢀ
circuits
ꢀ
for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
ꢀ
the
ꢀ
event
ꢀ
that
ꢀ
any
ꢀ
or
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products(including
ꢀ
technical
ꢀ
data,
ꢀ
services)
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
controlled
ꢀ
under
ꢀ
any
ꢀ
of
ꢀ
applicable
ꢀ
local
ꢀ
export
ꢀ
control
ꢀ
laws
ꢀ
and
ꢀ
regulations,
ꢀ
such
ꢀ
products
ꢀ
must
ꢀ
not
ꢀ
be
ꢀ
exported
ꢀ
without
ꢀ
obtaining
ꢀ
the
ꢀ
export
ꢀ
license
ꢀ
from
ꢀ
the
ꢀ
authorities
ꢀ
concerned
ꢀ
in
ꢀ
accordance
ꢀ
with
ꢀ
the
ꢀ
above
ꢀ
law.
ꢀ
6,
ꢀ
No
ꢀ
part
ꢀ
of
ꢀ
this
ꢀ
publication
ꢀ
may
ꢀ
be
ꢀ
reproduced
ꢀ
or
ꢀ
transmitted
ꢀ
in
ꢀ
any
ꢀ
form
ꢀ
or
ꢀ
by
ꢀ
any
ꢀ
means,
ꢀ
electronic
ꢀ
or
ꢀ
mechanical,
ꢀ
including
ꢀ
photocopying
ꢀ
and
ꢀ
recording,
ꢀ
or
ꢀ
any
ꢀ
information
ꢀ
storage
ꢀ
or
ꢀ
retrieval
ꢀ
system,
ꢀ
or
ꢀ
otherwise,
ꢀ
without
ꢀ
the
ꢀ
prior
ꢀ
written
ꢀ
permission
ꢀ
of
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
ꢀ
it
ꢀ
is
ꢀ
not
ꢀ
guaranteed
ꢀ
for
ꢀ
volume
ꢀ
production. Winsok
ꢀ
power
ꢀ
believes
ꢀ
information
ꢀ
herein
ꢀ
is
ꢀ
accurate
ꢀ
and
ꢀ
reliable,
ꢀ
but
ꢀ
no
ꢀ
guarantees
ꢀ
are
ꢀ
made
ꢀ
or
ꢀ
implied
ꢀ
regarding
ꢀ
its
ꢀ
use
ꢀ
or
ꢀ
any
ꢀ
infringements
ꢀ
of
ꢀ
intellectual
ꢀ
property
ꢀ
rights
ꢀ
or
ꢀ
other
ꢀ
rights
ꢀ
of
ꢀ
third
ꢀ
parties.
ꢀ
8,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
information
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
ꢀ
to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
