Winsok-Semicon-WSP4067B
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WSP4067B
N&
P
-Channel MOSFET
Product Summery
General Description
The
WSP4067B
is the highest performance
trench N-ch
and P-ch MOSFET with
extreme high cell
density , which provide
excellent RDSON and gate
charge for most
of the synchronous buck converter
applications .
BVDSS
4
0V
RDSON
2
5
m
Ω
ID
6.0
A
–
5
.
1
A
–
4
0V
40
m
Ω
Applications
The
WSP4067B
meet the RoHS and Green
Product requirement
, 100% EAS
guaranteed with full
function reliability
approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter.
z
Networking DC-DC Power System
z
Load Switch
Features
SOP-8 Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
N-Channel P-Channel
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
4
0
±
20
6.0
3.9
24
–
4
0
±
20
–
5
.
1
–
3.2
V
V
I
D
@T
C
=25
℃
Continuous Drain Current
Continuous Drain Current
A
A
I
D
@T
C
=
70
℃
I
DM
A
Pulsed Drain Current
Total Power Dissipation
–
2
0
2
P
D
@T
C
=25
℃
T
J
/T
STG
2
W
℃
-55 to 150
Operating Temperature /
Storage Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
Max.
62.5
50
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
—
—
R
θ
JC
Dec.2014
Page 1
WSP4067B
N&
P
-Channel MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
4
0
Typ.
—
Max.
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
—
—
35
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
6
A
—
0.06
7
25
V/
℃
—
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
55
40
V
GS
=4.5V , I
D
=
5
A
—
1.6
1.0
V
GS(th)
Gate Threshold Voltage
2.2
—
1
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-5.24
—
mV/
℃
V
DS
=
32
V , V
GS
=0V , T
J
=
85
℃
V
DS
=
32
V , V
GS
=0V , T
J
=
8
5
℃
I
DSS
Drain-Source Leakage Current
uA
nA
30
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
11
2
±
100
—
V
DS
=
20
V , V
GS
=
10
V , I
D
=
6
A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
2.2
—
1.9
18.6
8.7
—
V
DS
= 20 V, V
GEN
= 10 V,
R
G
= 3.3 Ω, R
L
= 3.3 Ω,
I
DS
= 6 A
.
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
2.6
—
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
600
62
—
V
DS
=
20
V , V
GS
=0V , f=1MHz
pF
—
48
—
Diode Characteristics
Symbol
Parameter
Conditions
TA=25°C.
Min.
—
Typ.
—
Max.
2.6
Unit
A
I
S
Continuous Source Current
Diode Forward Voltage
V
SD
—
—
1.
3
V
V
GS
=0V , I
S
=
1
A
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user’s specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C: The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
Dec.2014
Page
2
WSP4067B
N&
P
-Channel MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
4
0
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-
4
A
-0.03
40
—
V/
℃
50
—
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
55
75
V
GS
=-4.5V , I
D
=-
3
A
—
–
1.6
V
GS(th)
I
DSS
Gate Threshold Voltage
–
1.0
—
–
2.2
–
1
V
V
GS
=V
DS
, I
D
=-250uA
—
—
V
DS
=-
32
V , V
GS
=0V , T
J
=
85
℃
V
DS
=-
32
V , V
GS
=0V , T
J
=
8
5
℃
Drain-Source Leakage Current
uA
—
-30
±
100
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
nA
nC
—
20
5.7
4.6
6.8
33
V
DS
=-
20
V , V
GS
=-
10
V , I
D
=-
5.1
A
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
—
—
V
DD
=-
2
0V , V
GS
=-10V ,
R
G
=
3.3
Ω
,
—
—
ns
30
12
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
I
D
=-
5.1
A
,R
L
=
3.9
Ω.
—
—
1100
100
80
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
—
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
Unit
A
–
2.6
TA=25°C.
I
S
Continuous Source Current
Diode Forward Voltage
V
SD
—
—
-1.
2
V
V
GS
=0V , I
S
=-1A
.
A: The value of R
θ
JA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given
application depends on the user’s specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C:
The current rating is based on the t≤ 10s
junction to ambient thermal resistance rating.
Dec.2014
Page
3
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
ꢀ
not
ꢀ
have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
ꢀ
using
ꢀ
any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
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power
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assumes
ꢀ
no
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responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
ꢀ
that
ꢀ
result
ꢀ
from
ꢀ
using
ꢀ
products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
ꢀ
products
ꢀ
specifications
ꢀ
of
ꢀ
any
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and
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all
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Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
ꢀ
3,
ꢀ
Specifications
ꢀ
of
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any
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and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
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described
ꢀ
or
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contained
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herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
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the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
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products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
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should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
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any
ꢀ
and
ꢀ
all
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semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
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these
ꢀ
probabilistic
ꢀ
failures
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could
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give
ꢀ
rise
ꢀ
to
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accidents
ꢀ
or
ꢀ
events
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that
ꢀ
could
ꢀ
endanger
ꢀ
human
ꢀ
lives
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that
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could
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give
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rise
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to
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smoke
ꢀ
or
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fire,
ꢀ
or
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that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
ꢀ
error
ꢀ
prevention
ꢀ
circuits
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for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
ꢀ
the
ꢀ
event
ꢀ
that
ꢀ
any
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or
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all
ꢀ
Winsok
ꢀ
power
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products(including
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technical
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data,
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services)
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described
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or
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contained
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herein
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are
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controlled
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under
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any
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of
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applicable
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local
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export
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control
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laws
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and
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regulations,
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such
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products
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must
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not
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be
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exported
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without
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obtaining
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the
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export
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license
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from
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the
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authorities
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concerned
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in
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accordance
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with
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the
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above
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law.
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6,
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No
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part
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of
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this
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publication
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may
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be
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reproduced
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transmitted
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in
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any
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form
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or
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by
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means,
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or
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mechanical,
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including
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photocopying
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and
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recording,
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storage
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or
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retrieval
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system,
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or
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otherwise,
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without
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prior
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written
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permission
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of
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Winsok
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power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
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it
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is
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not
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guaranteed
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for
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volume
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production. Winsok
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power
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believes
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information
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herein
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accurate
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reliable,
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but
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are
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made
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implied
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regarding
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its
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use
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any
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infringements
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of
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intellectual
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rights
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or
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other
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rights
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of
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third
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parties.
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Any
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and
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all
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information
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described
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or
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contained
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herein
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are
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subject
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to
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change
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without
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notice
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due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
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to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
