Winsok-Semicon-WSP4077
| Part # | Winsok-Semicon-WSP4077 |
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WS
P
4077
Dual
P
-Channel MOSFET
Product Summery
General Description
The
WSP
4077
is the highest performance trench
P-Ch MOSFET
with extreme high cell density ,
which provide excellent RDSON and gate
charge for
most of the synchronous buck
converter applications
.
BVDSS
RDSON
1
5
m
Ω
ID
–
4
0V
-1
2
A
Applications
The
WSP
4077
meet the RoHS and
Green Product
requirement , 100% EAS
guaranteed with full
function reliability
approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOP
–
8 Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
–
4
0
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
20
-1
2
V
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
300µs Pulsed Drain Current (VGS=-10V)
Avalanche Energy, Single pulse (L=0.1mH)
Avalanche Current, Single pulse (L=0.1mH)
Total Power Dissipation
4
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
–
8.5
A
a
I
DM
–
40
A
E
AS
b
mJ
A
5
0
–
3
0
2.0
b
I
AS
P
D
@T
A
=25
℃
W
℃
℃
T
STG
T
J
Storage
T
e
mperature Range
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
70
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
2
5
R
θ
JC
—
Page 1
Rev
1.0.Ma
r.20
23
WS
P
4077
Dual
P
-Channel MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
4
0
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-1
0
A
-0.018
1
5
—
V/
℃
19
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
26
1
9
V
GS
=-4.5V , I
D
=-
5
A
—
V
GS(th)
Gate Threshold Voltage
-1.
2
—
–
1.
7
5.04
—
–
2.
5
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
—
-1
V
DS
=-
32
V , V
GS
=0V , T
J
=25
℃
V
DS
=-
32
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
—
-5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
18
V
DS
=-5V , I
D
=-10A
—
—
Q
g
—
28
2.8
1.5
20
—
V
DS
=-
20
V , V
GS
=-
10
V , I
D
=-1
0
A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
Turn-On Delay Time
Rise Time
—
—
—
—
13.5
V
DD
=-
15
V , V
GS
=-10V ,
R
G
=
6
Ω
, I
D
=-
1
A
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
26
14
—
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
27
00
2
80
150
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
–
12
–
40
-1.
1
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
V
2
6
—
nS
nC
I
F
=-1
0
A
,
dI/dt=100A/µs
,
T
J
=25
℃
Q
rr
—
20
—
Note
1,
Pulse test; pulse width
≤
300
µ
s, duty cycle
≤
2%.
2,
Guaranteed by design, not subject to production testing.
Page
2
Rev
1.0.Ma
r.20
23
WS
P
4077
Dual
P
-Channel MOSFET
Typical Operating Characteristics
Power Dissipation
Drain Current
1
4
1
2
2
.5
2
.0
1
.
8
1
.
6
1.
4
1.
2
0.5
10
8
6
4
0
T =25
o
C,V =-10V
T
A
=25
o
C
0.0
A
G
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (
°
C)
T
j
– Junction Temperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
it
m
i
L
)
0.2
0.1
n
o
(
ds
R
300
µ
s
0.05
0.1
0.01
1E-3
1ms
0.02
0.01
1
10ms
100ms
1s
Single Pulse
0.1
DC
Mounted on 1in
2
pad
T
A
=25
o
C
R
θ
JA
:
7
0
o
C/W
0.01
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10 30
-V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
Page
3
Rev
1.0.Ma
r.20
23
WS
P
4077
Dual
P
-Channel MOSFET
Typical Operating Characteristics
Output Characteristics
Drain-Source On Resistance
3
0
32
28
24
20
16
12
8
V
GS
=-5,-6,-7,-8,-9,-10V
-4V
25
V
GS
=-4.5V
V
GS
=-10V
2
0
-3.5V
15
10
-3V
0
0.0
4
0.5
1.0
1.5
2.0
2.5
3.0
0
8
16
24
32
40
-V
DS
– Drain-Source Voltage (V)
-I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
I
DS
= -250
µ
A
I
DS
=-1
0
A
60
50
40
30
20
10
0
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
-V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Page
4
Rev
1.0.Ma
r.20
23
WS
P
4077
Dual
P
-Channel MOSFET
Typical Operating Characteristics
Drain-Source On Resistance
Source-Drain Diode Forward
5
0
2.0
V
GS
= -10V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
= –
10
A
10
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C:
15
m
Ω
0.1
0.0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (
°
C)
-V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
42
00
37
00
10
9
8
7
6
5
4
3
2
1
0
Frequency=1MHz
V
DS
=-20V
I
DS
=-
10
A
32
00
2
700
Ciss
22
00
17
00
12
00
7
00
200
100
0
Coss
Crss
5
10
20
30
40
0
0
8
16
24
32
40
Q
G
–
G
ate Charge (nC)
-V
DS
– Drain – Source Voltage (V)
Page
5
Rev
1.0.Ma
r.20
23
Attention
ꢀ
1,
ꢀ
Any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein
ꢀ
do
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not
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have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
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your
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Winsok
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power
ꢀ
representative
ꢀ
nearest
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you
ꢀ
before
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using
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any
ꢀ
Winsok
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power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
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power
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assumes
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no
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responsibility
ꢀ
for
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equipment
ꢀ
failures
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that
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result
ꢀ
from
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using
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products
ꢀ
at
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values
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that
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exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
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as
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maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
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listed
ꢀ
in
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products
ꢀ
specifications
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of
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any
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and
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all
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Winsok
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power
ꢀ
products
ꢀ
described
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or
ꢀ
contained
ꢀ
herein.
ꢀ
3,
ꢀ
Specifications
ꢀ
of
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any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
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the
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described
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products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
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products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
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any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
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It
ꢀ
is
ꢀ
possible
ꢀ
that
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these
ꢀ
probabilistic
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failures
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could
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give
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rise
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to
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accidents
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or
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events
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that
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could
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endanger
ꢀ
human
ꢀ
lives
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that
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could
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give
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rise
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to
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smoke
ꢀ
or
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fire,
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or
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that
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could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
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occur.
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Such
ꢀ
measures
ꢀ
include
ꢀ
but
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are
ꢀ
not
ꢀ
limited
ꢀ
to
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protective
ꢀ
circuits
ꢀ
and
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error
ꢀ
prevention
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circuits
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for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
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the
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event
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that
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any
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or
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all
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Winsok
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power
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products(including
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data,
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described
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contained
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herein
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are
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controlled
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under
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any
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of
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applicable
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local
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export
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control
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laws
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and
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regulations,
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such
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must
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be
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exported
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without
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obtaining
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the
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export
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license
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from
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the
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authorities
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concerned
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in
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accordance
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with
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the
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above
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law.
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6,
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No
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part
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of
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retrieval
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prior
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written
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permission
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of
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Winsok
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power
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Semiconductor
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CO.,
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LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
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it
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is
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not
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guaranteed
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for
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volume
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production. Winsok
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information
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herein
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reliable,
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are
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made
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implied
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regarding
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its
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use
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any
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infringements
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of
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rights
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or
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other
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rights
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of
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parties.
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Any
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and
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all
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information
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described
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or
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contained
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herein
ꢀ
are
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subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
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to
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use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
