Winsok-Semicon-WSP4099
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WS
P
4099
Dual
P
-Channel MOSFET
Product Summery
General Description
The
WSP4099
is the highest performance
trench P-ch
MOSFETs with extreme high
cell density ,
which provide excellent
RDSON and gate charge
for most of the
synchronous buck converter
applications .
BVDSS
RDSON
3
0
m
Ω
ID
-40V
–
6.5
A
Applications
The
WSP4099
meet the RoHS and Green
Product requirement
, 100% EAS
guaranteed with full
function reliability
approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOP
–
8 Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
Parameter
Rating
-40
Units
V
V
DS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, -V
GS
@ -10V
1
Continuous Drain Current, -V
GS
@ -10V
1
Pulsed Drain Current
2
V
GS
I
D
@T
C
=25
℃
I
D
@T
C
=100
℃
I
DM
±
20
–
6.5
–
4
.
5
–
22
V
A
A
A
EAS
Single Pulse Avalanche Energy
3
25
mJ
A
–
10
I
AS
Avalanche Current
Total Power Dissipation
4
W
℃
℃
2.0
P
D
@T
C
=25
℃
T
STG
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
110
50
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
Dec.2014
Page 1
WS
P
4099
Dual
P
-Channel MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-40
—
Typ.
—
Max.
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
—
—
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-
6.5
A
-0.02
30
V/
℃
38
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
46
62
V
GS
=-4.5V , I
D
=-
4
.5
A
—
V
GS(th)
Gate Threshold Voltage
-1.
5
—
–
2.0
3.72
—
-2.5
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
V/
℃
V
DS
=-32V , V
GS
=0V , T
J
=25
℃
—
1
I
DSS
Drain-Source Leakage Current
uA
V
DS
=-32V , V
GS
=0V , T
J
=55
℃
GS
=
±
20V , V
DS
=0V
—
—
5
V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-
4
A
—
8
Q
g
—
—
7.5
2.4
3.5
8.7
7
V
DS
=-
20
V , V
GS
=-4.5V , I
D
=-
6.5
A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
V
DD
=-15V , V
GS
=-10V , R
G
=
6
Ω
,
I
D
=-1A
,R
L
=20Ω
—
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
31
17
—
—
—
668
98
C
iss
C
oss
C
rss
Input Capacitance
—
—
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
72
—
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=-25V , L=0.
5
mH , I
AS
=-
1
0A
20
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
Unit
A
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
–
2
I
S
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
–
22
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
-1.
0
V
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.
The EAS data shows Max. rating . The test condition is VDD=-25V,VGS=-10V,L=0.5mH,IAS=-10A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page 1
WS
P
4099
Dual
P
-Channel MOSFET
Typical Characteristics
5
5
4
5
3
5
25
12
10
I
D
=-
6.5
A
V
GS
=-10V
8
6
4
2
0
V
GS
=-7V
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
0
0.5
1
1.5
2
4
6
8
10
-V
GS
(V)
-V
D
S
, Drain-to-Source Voltage (V)
Fig.2 On-Resistance v.s Gate-Source
Fig.1 Typical Output Characteristics
8
10
V
DS
=-20V
I
D
=-
6.5
A
6
4
2
0
7.5
5
T =150
T =25
℃
J
℃
J
2.5
0
0.2
0.4
0.6
0.8
1
0
5
10
15
20
25
-V
SD
S
ource-to-Drain Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig.4 Gate Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
2.0
1.5
1.0
0.5
1.5
1
0.5
0
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
J
)
℃
T
J
, Junction Temperature (
℃
)
Fig.5 Normalized V
GS(th)
v.s T
J
Fig.6 Normalized R
DSON
v.s T
J
Dec.2014
Page 1
WS
P
4099
Dual
P
-Channel MOSFET
1
000
3
00
8
0
100.00
10.00
1.00
F=1.0
M
Hz
Ciss
100us
1ms
Coss
Crss
10ms
100ms
0.10
DC
Tc=25
o
C
Single Pulse
0.01
10
0.1
1
10
100
1
5
9
13
17
21
25
-V
DS
(V)
-V
DS
, Drain to Source Voltage(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
P
DM
0.05
0.02
T
ON
T
D =
T
ON
/T
0.01
T
Jpeak
=
T
C
+P
D
M
XR
θ
JC
SINGLE
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Unclamped Inductive Waveform
Dec.2014
Page 1
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Sep.2014. Specifications
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