Winsok-Semicon-WSP4447
| Part # | Winsok-Semicon-WSP4447 |
Download  | Winsok-Semicon-WSP4447 |
WSP4447
P-Ch MOSFET
Product Summery
General Description
The
WSP4447
is the highest performance trench
P-Ch MOSFET
with extreme high cell density ,
which provide excellent RDSON and gate
charge for
most of the synchronous buck
converter applications
.
BVDSS
RDSON
ID
–
4
0V
13
m
Ω
-1
1
A
Applications
The
WSP4447
meet the RoHS and Green
Product requirement
, 100% EAS
guaranteed with full
function reliability
approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOP
–
8 Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
–
4
0
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
20
-1
1
V
Continuous Drain Current, V
GS
@ -10V
1
Continuous Drain Current, V
GS
@ -10V
1
300µs Pulsed Drain Current (VGS=-10V)
Avalanche Energy, Single pulse (L=0.1mH)
Avalanche Current, Single pulse (L=0.1mH)
Total Power Dissipation
4
A
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
–
9.0
A
a
I
DM
–
44
A
E
AS
b
mJ
A
54
–
33
2.0
b
I
AS
P
D
@T
A
=25
℃
W
℃
℃
T
STG
T
J
Storage
T
e
mperature Range
-55 to 150
-55 to 150
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
75
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
24
Dec.2014
Page 1
WSP4447
P-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
4
0
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-10V , I
D
=-1
3
A
-0.018
13
—
V/
℃
16
—
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
26
18
V
GS
=-4.5V , I
D
=-
5
A
—
V
GS(th)
Gate Threshold Voltage
-1.
4
—
–
1.9
5.04
—
–
2.4
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
—
-1
V
DS
=-
32
V , V
GS
=0V , T
J
=25
℃
V
DS
=-
32
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
—
-5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
18
V
DS
=-5V , I
D
=-10A
—
—
Q
g
—
32
5.2
8
—
V
DS
=-
20
V , V
GS
=-
10
V , I
D
=-1
1
A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
Turn-On Delay Time
Rise Time
—
14
12
—
—
—
V
DD
=-
20
V , V
GS
=-10V ,
R
G
=
6
Ω
, I
D
=-
1
A
,RL=
20
Ω
—
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
41
22
—
—
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
1500
235
180
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
–
3
.0
–
18
-1.
1
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
V
24
—
nS
nC
I
F
=-1
1
A
,
dI/dt=100A/µs
,
T
J
=25
℃
Q
rr
—
18
—
Note
1,
Pulse test; pulse width
≤
300
µ
s, duty cycle
≤
2%.
2,
Guaranteed by design, not subject to production testing.
Dec.2014
Page 2
WSP4447
P-Ch MOSFET
Typical Operating Characteristics
Power Dissipation
Drain Current
12
10
8
3.5
3.0
2.5
2.0
1.5
1.0
0.5
6
4
2
T =25
o
C,V =-10V
T
A
=25
o
C
0.0
A
G
0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (
°
C)
T
j
– Junction Temperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
it
m
i
L
)
0.2
0.1
n
o
(
ds
R
300
µ
s
0.05
0.1
0.01
1E-3
1ms
0.02
0.01
1
10ms
100ms
1s
Single Pulse
0.1
DC
Mounted on 1in
2
pad
T
A
=25
o
C
R
θ
JA
: 40
o
C/W
0.01
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1 10
30
-V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
Dec.2014
Page 3
WSP4447
P-Ch MOSFET
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
50
40
30
20
10
0
32
28
24
20
16
12
8
V
GS
=-5,-6,-7,-8,-9,-10V
-4V
V
GS
=-4.5V
V
GS
=-10V
-3.5V
-3V
-2.5V
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
8
16
24
32
40
-V
DS
– Drain-Source Voltage (V)
-I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
60
50
40
30
20
10
0
I
DS
= -250
µ
A
I
DS
=-11A
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
-V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Dec.2014
Page
4
WSP4447
P-Ch MOSFET
Typical Operating Characteristics (Cont.)
Output Characteristics
Drain-Source On Resistance
50
40
30
20
10
0
32
28
24
20
16
12
8
V
GS
=-5,-6,-7,-8,-9,-10V
-4V
V
GS
=-4.5V
V
GS
=-10V
-3.5V
-3V
-2.5V
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
8
16
24
32
40
-V
DS
– Drain-Source Voltage (V)
-I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
60
50
40
30
20
10
0
I
DS
= -250
µ
A
I
DS
=-11A
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
-V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Dec.2014
Page
5
WSP4447
P-Ch MOSFET
Package Information
SOP-8
-T- SEATING
PLANE < 4 mils
SEE VIEW A
D
°
b
c
e
GAUGE PLANE
SEATING PLANE
L
VIEW A
SOP-8
S
Y
M
B
O
L
RECOMMENDED LAND PATTERN
MILLIMETERS
INCHES
1.27
MIN.
MAX.
1.75
0.25
MIN.
MAX.
A
0.069
0.010
0.004
0.049
0.012
0.007
0.189
0.228
0.150
A1
A2
b
0.10
1.25
0.31
0.17
4.80
5.80
3.80
2.2
0.020
0.010
0.51
0.25
5.00
6.20
4.00
c
D
5.74
0.197
0.244
0.157
E
E1
e
2.87
1.27 BSC
0.050 BSC
0.010
0.016
0.020
0.050
8
°
0.25
0.40
0.50
1.27
8
°
h
L
0.8
0.635
°
0
°
0
0
UNIT: mm
Note: 1. Follow JEDEC MS-012 AA.
2. Dimension
“
D
”
does not include mold flash, protrusions or gate burrs.
Mold flash, protrusion or gate burrs shall not exceed 6 mil per side.
3. Dimension
“
E
”
does not include inter-lead flash or protrusions.
Inter-lead flash and protrusions shall not exceed 10 mil per side.
Dec.2014
Page
6
Attention
ꢀ
1,
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Any
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described
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that
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can
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handle
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applications
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
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or
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other
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whose
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failure
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can
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be
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reasonably
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expected
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to
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result
ꢀ
in
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serious
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physical
ꢀ
and/or
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material
ꢀ
damage.
ꢀ ꢀ
Consult
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with
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your
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Winsok
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ꢀ
representative
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nearest
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you
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before
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using
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any
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Winsok
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products
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described
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contained
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herein
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in
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assumes
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responsibility
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for
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failures
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that
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result
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at
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values
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that
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exceed,
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even
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momentarily,
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rated
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values
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(such
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as
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maximum
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ratings,
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operating
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condition
ꢀ
ranges,
ꢀ
or
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other
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parameters)
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listed
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in
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specifications
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of
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any
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Winsok
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herein.
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Specifications
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of
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any
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and
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all
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or
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contained
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herein
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stipulate
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the
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performance,
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characteristics,
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and
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functions
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of
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the
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described
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products
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in
ꢀ
the
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independent
ꢀ
state,
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and
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are
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not
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guarantees
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of
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the
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performance,
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characteristics,
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and
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functions
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of
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described
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products
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as
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mounted
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in
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the
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customer’s
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products
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or
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equipment.
ꢀ
T
o
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verify
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symptoms
ꢀ
and
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states
ꢀ
that
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cannot
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be
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evaluated
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in
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an
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independent
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device,
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the
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customer
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should
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always
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evaluate
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and
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test
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devices
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mounted
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in
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the
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customer’s
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products
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or
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equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
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supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
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products.
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However,
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any
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semiconductor
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fail
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with
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probability.
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It
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is
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probabilistic
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to
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human
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lives
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could
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cause
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damage
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to
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other
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property.
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When
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designing
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equipment,
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adopt
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safety
ꢀ
measures
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so
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that
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these
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kinds
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of
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Such
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include
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but
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to
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protective
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error
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prevention
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circuits
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for
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safe
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design,
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redundant
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design,
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and
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structural
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design.
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with
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above
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7,
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Information
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(including
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circuit
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diagrams
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and
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circuit
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parameters)
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herein
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due
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improvement,etc.
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When
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refer
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to
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the
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“Delivery
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Specification”
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of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
