Winsok-Semicon-WSP4800
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WSP4800
Dual
N
-Channel MOSFET
General Description
Product Summery
The
WSP4800
is the highest performance
trench N-ch MOSFET with extreme high cell
density
,
which provide excellent RDSON and
gate chargens for most of the synchronous
buck converter applications .
BVDSS
RDSON
32
m
Ω
ID
4
0V
6
.0
A
Applicatio
The
WSP4800
meet the RoHS and
Green Product
requirement
,
100%
EAS guaranteed with full
function
reliability approved.
z
Power Management in Note book.
z
Battery Powered System.
z
Industrial DC/DC Conversion Circuits
Features
SOP
–
8 Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
4
0
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
20
V
Continuous Drain Current, V
GS
@ 10V
6
.0
5.
4
28
A
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ 10V
A
I
D
@T
C
=70
℃
Pulsed Drain Current
a
I
DM
A
1.5
Total Power Dissipation
T
A
=25°C
P
D
@T
A
=25
℃
P
D
@T
A
=
70
℃
T
STG
A
1.28
Total Power Dissipatio
n T
A
=70°C
Storage
T
e
mperature Range
W
℃
℃
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
110
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
b
Thermal Resistance Junction-Case
62.5
R
θ
JC
—
Note a
：
Pulse width limited by max. junction temperature.
Note b
：
Surface Mounted on 1in
2
pad area, t =999sec.
Note c
：
UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature T
j
=25
o
C).
Rev 1: Apr.2019
Page 1
WSP4800
Dual
N
-Channel MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
4
0
Typ.
—
Max.
Unit
—
BV
DSS
Drain-Source Breakdown Voltage
V
3
2
V
GS
=10V , I
D
=
6
.0
A
V
GS
=4.5V , I
D
=
5.
0
A
V
GS
=V
DS
, I
D
=250uA
—
35
40
c
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
V
—
36
1.
0
1.
6
2.5
V
GS(th)
I
DSS
Gate Threshold Voltage
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1
Drain-Source Leakage Current
uA
nA
30
V
GS
=
±
20V , V
DS
=0V
I
GSS
Gate-Source Leakage Current
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
±
100
—
d
7.5
Q
g
—
3.24
2.75
7.8
V
DS
=
20
V , V
GS
=4.5V , I
D
=
6
A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
—
—
—
—
6.9
V
DD
=
20
V
,
V
G
EN
=10V
,
R
G
=
6
Ω
,
I
D
=
1
A
,R
L
=
20
Ω
.
ns
22.4
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
4.8
815
95
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=
20
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
60
Note c
：
Pulse test ; pulse width
≤
300
µ
s, duty cycle
≤
2
%
.
Note d
：
Guaranteed by design, not subject to production testing.
Rev 1: Apr.2019
Page
2
WSP4800
Dual
N
-Channel MOSFET
Typical Characteristics
Drain Current
Power Dissipation
2.4
2.0
1.6
1.2
0.8
0.4
0.0
8
7
6
5
4
3
2
1
0
T
A
=25
o
C,V
G
=10V
T
A
=25
o
C
20 40 60 80
100 120 140 160
0
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
e
mperature (
°
C)
T
j
– Junction
T
emperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
100
10
2
1
Duty = 0.5
0.2
0.1
it
m
i
L
)
n
o
(
s
d
R
0.05
0.1
0.01
1E-3
0.02
0.01
300
µ
s
1
1ms
10ms
Single Pulse
0.1
Mounted on 1in
2
pad
100ms
1s
θ
JA
:110
o
C/W
T
A
=25
o
C
DC
10
R
0.01
0.01
0.1
1
100 300
1E-4 1E-3 0.01
0.1
1
10 100
1000
Square Wave Puls
e
D
uration (sec)
V
DS
– Drain – Source Voltage (V)
Rev 1: Apr.2019
Page
3
WSP4800
Dual
N
-Channel MOSFET
Drain-Source On Resistance
Output Characteristics
30
25
20
15
10
5
30
25
20
15
10
5
V
GS
=4,5,6,7,8,9,10V
3.5V
V
GS
=4.5V
V
GS
=10V
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
5
10
15
20
25
30
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
70
60
50
40
30
20
10
0
I
DS
=6A
I
DS
=250
µ
A
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
T
j
– Junction
T
e
mperature (
°
C)
V
GS
– Gate – Source Voltage (V)
Rev 1: Apr.2019
Page
4
WSP4800
Dual
N
-Channel MOSFET
Drain-Source On Resistance
Source-Drain Diode Forward
30
10
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
V
GS
= 10V
I
DS
= 6A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 17m
Ω
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
1200
1000
800
600
400
200
0
10
Frequency=1MHz
V
DS
=20V
I
DS
=6A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
5
10 15 20 25 30 35 40
0
2
4
6
8
10 12 14 16
Q
G
–
G
ate Charge (nC)
V
DS
– Drain – Source Voltage (V)
Rev 1: Apr.2019
Page
5
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
ꢀ
not
ꢀ
have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
ꢀ
using
ꢀ
any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
ꢀ
power
ꢀ
assumes
ꢀ
no
ꢀ
responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
ꢀ
that
ꢀ
result
ꢀ
from
ꢀ
using
ꢀ
products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
ꢀ
products
ꢀ
specifications
ꢀ
of
ꢀ
any
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and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
ꢀ
3,
ꢀ
Specifications
ꢀ
of
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any
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and
ꢀ
all
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Winsok
ꢀ
power
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products
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described
ꢀ
or
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contained
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herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
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products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
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any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
ꢀ
these
ꢀ
probabilistic
ꢀ
failures
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could
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give
ꢀ
rise
ꢀ
to
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accidents
ꢀ
or
ꢀ
events
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that
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could
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endanger
ꢀ
human
ꢀ
lives
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that
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could
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give
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rise
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to
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smoke
ꢀ
or
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fire,
ꢀ
or
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that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
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error
ꢀ
prevention
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circuits
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for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
ꢀ
the
ꢀ
event
ꢀ
that
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any
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or
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all
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Winsok
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power
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products(including
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technical
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data,
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services)
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described
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or
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contained
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herein
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are
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controlled
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under
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any
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of
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applicable
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local
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export
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control
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laws
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and
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regulations,
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such
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products
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must
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not
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be
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exported
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without
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obtaining
ꢀ
the
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export
ꢀ
license
ꢀ
from
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the
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authorities
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concerned
ꢀ
in
ꢀ
accordance
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with
ꢀ
the
ꢀ
above
ꢀ
law.
ꢀ
6,
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No
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part
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of
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this
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publication
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may
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be
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reproduced
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or
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transmitted
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in
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any
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form
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or
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by
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any
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means,
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electronic
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or
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mechanical,
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including
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photocopying
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and
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recording,
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or
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any
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information
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storage
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or
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retrieval
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system,
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or
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otherwise,
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without
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the
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prior
ꢀ
written
ꢀ
permission
ꢀ
of
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Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
ꢀ
it
ꢀ
is
ꢀ
not
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guaranteed
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for
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volume
ꢀ
production. Winsok
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believes
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information
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herein
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is
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accurate
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and
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reliable,
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but
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no
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guarantees
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are
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made
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or
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implied
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regarding
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its
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use
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or
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any
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infringements
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of
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intellectual
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property
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rights
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or
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other
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rights
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of
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third
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parties.
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Any
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and
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all
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information
ꢀ
described
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or
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contained
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
ꢀ
to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
