Winsok-Semicon-WSP6024
| Part # | Winsok-Semicon-WSP6024 |
Download  | Winsok-Semicon-WSP6024 |
WSP6024
N
-Channel MOSFET
General Description
Product Summery
The
WSP6024
is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate
charge for
most of the synchronous buck
converter applications
.
BVDSS
RDSON
ID
8
m
Ω
60V
1
5
A
Applications
The WSP6
0
2
4
meet the RoHS and Green
Product requirement
, 100% EAS guaranteed
with full
function reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOP
–
8 Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
60
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
V
GS
±
20
1
5
V
A
I
D
@T
C
=25
℃
I
D
@T
C
=70
℃
9.6
A
a
I
DM
43
A
EAS
b
Single Pulse Avalanche Energy
3
mJ
A
81
b
I
AS
Avalanche Current
Total Power Dissipation
4
16
1.78
P
D
@T
A
=25
℃
W
℃
℃
T
STG
T
J
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
150
Thermal Data
Symbol
Parameter
Typ.
—
Max.
72
Unit
℃
/W
℃
/W
R
θ
JA
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
c
1.2
R
θ
JC
—
Note a
Pulse width limited by max. junction temperature.
：
Note b
UIS tested and pulse width limited by maximum junction temperature 150
o
C (initial temperature
T
=
25
o
C).
：
：
j
Note c
Surface Mounted on 1in
2
pad area.
Dec.2014
Page 1
WSP6024
N
-Channel MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
60
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V , I
D
=
1
3
A
0.044
—
V/
℃
—
8
10
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
11
1
3.7
V
GS
=4.5V , I
D
=
8
A
—
V
GS(th)
Gate Threshold Voltage
1.0
—
2.0
-4.
6
—
3.0
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
—
1
V
DS
=
60
V , V
GS
=0V , T
J
=25
℃
V
DS
=
60
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
nA
—
—
100
±
100
—
V
GS
=
±
20V , V
DS
=0V
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
25.4
4.6
3.8
15
V
DS
=
30
V , V
GS
=10V , I
D
=
6
A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
V
DD
=30V , V
G
EN
=10V ,
7
—
ns
R
G
=
6
Ω
I
D
=
1
A
,R
L
=30Ω
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
34
—
30
—
—
1500
280
40
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=
30
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
1.
3
—
Unit
V
V
SD
t
rr
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
GS
=0V , I
S
=1A , T
J
=25
℃
3
0
—
nS
nC
I
F
=
6.
0
A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
29
—
Note d
Pulse test ; pulse width
≤
300ms, duty cycle
≤
2%.
：
Note e
Guaranteed by design, not subject to production testing.
：
Dec.2014
Page
2
WSP6024
N
-Channel MOSFET
Typical Characteristics
Power Dissipation
Drain Current
2.0
1.6
1.2
0.8
0.4
0.0
15
12.5
10
7.5
5.0
2.5
T
A
=25
o
C
20 40 60 80
100 120 140 160
T
A
=25
o
C,V
G
=10V
0
0
0
20 40 60 80
100 120 140 160
T
j
– Junction Temperature (°C)
T
j
– Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
Duty =
0.5
0.2
0.1
0.05
0.1
0.01
1E-3
0.02
0.01
Single Pulse
Mounted on 1in
2
pad
R
q
JA
: 70
o
C/W
1E-4 1E-3 0.01
0.1
1
10 100
1000
V
DS
– Drain – Source Voltage (V)
Square Wave Pulse Duration (sec)
Fig5.
Typical Source-Drain Diode Forward Voltage
Dec.2014
Page
3
WSP6024
N
-Channel MOSFET
Output Characteristics
Drain-Source On Resistance
40
35
30
25
20
15
10
5
13
12
11
10
9
V
G
S
=4,5,6,7,8,9,10V
3.5V
V
G
S
=4.5V
V
G
S
=10V
8
7
6
3V
5
0
4
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
8
16
24
32
40
V
DS
– Drain – Source Voltage (V)
I
D
– Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
35
30
25
20
15
10
5
I
DS
=6A
I
DS
=250
m
A
0
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
V
GS
– Gate – Source Voltage (V)
T
j
– Junction Temperature (°C)
Dec.2014
Page
4
WSP6024
N
-Channel MOSFET
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
40
10
V
G
S
= 10V
I
DS
= 6A
T
=
150
o
C
j
T
=
25
o
C
j
1
R
O
N
@
T
=25
o
C: 7m
W
j
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction Temperature (°C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Frequency=1MHz
Ciss
Gate Charge
2000
1800
1600
1400
1200
1000
800
10
V
DS
=30V
I
DS
=6A
9
8
7
6
5
4
3
2
1
0
600
Coss
400
Crss
10
200
0
0
20
30
40
50
0
4
8
12 16 20 24 28
V
DS
– Drain-Source Voltage (V)
Q
G
– Gate Charge (nC)
Dec.2014
Page
5
WSP6024
N
-Channel MOSFET
Transfer Characteristics
40
32
24
16
8
T
=
25
o
C
j
T
=
125
o
C
j
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V
GS
– Gate-Source Voltage (V)
Dec.2014
Page
6
WSP6024
N
-Channel MOSFET
SOP8 Package Outline Data
DIMENSIONS ( unit : mm )
Symbol
Min
—
Typ
1.75
1.35
0.42
4.92
1.27
1.05
0.65
0.25
0.50
Max
—
Symbol
Min
0.10
—
Typ
0.18
0.25
0.22
3.90
5.98
0.68
0.25
0.10
Max
0.25
—
A
A
2
b
p
D
e
A
1
A
3
c
1.25
0.36
4.80
—
1.45
0.49
5.00
—
0.19
3.80
5.80
0.40
—
0.25
4.00
6.20
1.00
—
E
H
E
L
p
v
L
—
—
Q
w
Z
0.60
—
0.70
—
y
—
—
0.30
0.70
θ
0°
8°
Dec.2014
Page
7
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
ꢀ
not
ꢀ
have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
ꢀ
using
ꢀ
any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
ꢀ
power
ꢀ
assumes
ꢀ
no
ꢀ
responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
ꢀ
that
ꢀ
result
ꢀ
from
ꢀ
using
ꢀ
products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
ꢀ
products
ꢀ
specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
ꢀ
3,
ꢀ
Specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
ꢀ
these
ꢀ
probabilistic
ꢀ
failures
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
that
ꢀ
could
ꢀ
endanger
ꢀ
human
ꢀ
lives
ꢀ
that
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
smoke
ꢀ
or
ꢀ
fire,
ꢀ
or
ꢀ
that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
ꢀ
error
ꢀ
prevention
ꢀ
circuits
ꢀ
for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
ꢀ
the
ꢀ
event
ꢀ
that
ꢀ
any
ꢀ
or
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products(including
ꢀ
technical
ꢀ
data,
ꢀ
services)
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
controlled
ꢀ
under
ꢀ
any
ꢀ
of
ꢀ
applicable
ꢀ
local
ꢀ
export
ꢀ
control
ꢀ
laws
ꢀ
and
ꢀ
regulations,
ꢀ
such
ꢀ
products
ꢀ
must
ꢀ
not
ꢀ
be
ꢀ
exported
ꢀ
without
ꢀ
obtaining
ꢀ
the
ꢀ
export
ꢀ
license
ꢀ
from
ꢀ
the
ꢀ
authorities
ꢀ
concerned
ꢀ
in
ꢀ
accordance
ꢀ
with
ꢀ
the
ꢀ
above
ꢀ
law.
ꢀ
6,
ꢀ
No
ꢀ
part
ꢀ
of
ꢀ
this
ꢀ
publication
ꢀ
may
ꢀ
be
ꢀ
reproduced
ꢀ
or
ꢀ
transmitted
ꢀ
in
ꢀ
any
ꢀ
form
ꢀ
or
ꢀ
by
ꢀ
any
ꢀ
means,
ꢀ
electronic
ꢀ
or
ꢀ
mechanical,
ꢀ
including
ꢀ
photocopying
ꢀ
and
ꢀ
recording,
ꢀ
or
ꢀ
any
ꢀ
information
ꢀ
storage
ꢀ
or
ꢀ
retrieval
ꢀ
system,
ꢀ
or
ꢀ
otherwise,
ꢀ
without
ꢀ
the
ꢀ
prior
ꢀ
written
ꢀ
permission
ꢀ
of
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
ꢀ
it
ꢀ
is
ꢀ
not
ꢀ
guaranteed
ꢀ
for
ꢀ
volume
ꢀ
production. Winsok
ꢀ
power
ꢀ
believes
ꢀ
information
ꢀ
herein
ꢀ
is
ꢀ
accurate
ꢀ
and
ꢀ
reliable,
ꢀ
but
ꢀ
no
ꢀ
guarantees
ꢀ
are
ꢀ
made
ꢀ
or
ꢀ
implied
ꢀ
regarding
ꢀ
its
ꢀ
use
ꢀ
or
ꢀ
any
ꢀ
infringements
ꢀ
of
ꢀ
intellectual
ꢀ
property
ꢀ
rights
ꢀ
or
ꢀ
other
ꢀ
rights
ꢀ
of
ꢀ
third
ꢀ
parties.
ꢀ
8,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
information
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
ꢀ
to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
