Winsok-Semicon-WSP6047

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Winsok-Semicon-WSP6047
WSP6047  
P-Ch MOSFET  
General Description  
Product Summery  
The
WSP6047
is the highest performance  
trench P-ch
 
MOSFETs with extreme high cell  
density ,
 
which provide excellent RDSON and  
gate charge
 
for most of the synchronous  
buck converter
 
applications .  
BVDSS  
RDSON  
64
m
Ω
 
ID  
–
6
0V  
–
4.0
A  
Applications  
The
WSP6047
meet the RoHS and Green  
Product requirement
 
, 100% EAS  
guaranteed with full
 
function reliability  
approved.  
z
High Frequency Point-of-Load Synchronous  
Buck Converter for MB/NB/UMPC/VGA  
z
Networking DC-DC Power System  
z
CCFL Back-light Inverter  
Features  
SOP-8
Pin Configuration  
z
Advanced high cell density Trench technology  
z
Super Low Gate Charge  
z
Excellent CdV/dt effect decline  
z
100% EAS Guaranteed  
z
Green Device Available  
Absolute Maximum Ratings  
Symbol  
V

DS  

Parameter  
Rating  
–
6
0  
Units  
V
Drain-Source Voltage  
Gate-Sou
r
ce Voltage  
V

GS  

±
20  
–
4.0  
V
I

D

@T

C

=25
℃  
Continuous Drain Current  
Continuous Drain Current  
A
–
2.2  
–
20  
2.0  
A
I

D

@T

C

=
7
0
℃  
I

D
P  

A
Pulsed Drain Current  
Total Power Dissipation  
P

D

@T

C

=25
℃  
T

J

/T

STG  

W
℃
Operating/
Storage Temperature Range  
-55 to 150  
Thermal Data  
Symbol  
R

θ
JA  

Parameter  
Typ.  
—  
Max.  
62  
Unit  
℃
/W  
℃
/W  
Thermal Resistance Junction-Ambient  
Thermal Resistance Junction-Case  
R

θ
JC  

—  
4
Dec.2014  
Page 1  

WSP6047  
P-Ch MOSFET  
P-Channel Electrical Characteristics (T

J

=25
℃
, unless otherwise noted)  
Symbol  
Parameter  
Conditions  
V

GS

=0V , I

D

=-250uA  
Min.  
-60  
—  
Typ.  
—  
Max.  
Unit  
BV

DSS  

Drain-Source Breakdown Voltage  
—  
V
84  
V

GS

=-10V , I

D

=-
4
A  
V

GS

=-4.5V , I

D

=-
3
A  
V

GS

=V

DS

, I

D

=-250uA  
V

DS

=-
60
V , V

GS

=0V  
64  
R

DS(ON)  

Static Drain-Source On-Resistance  
m
Ω
 
104  
-2.5  
–
1  
80  
—  
V

GS(th)  

I

DSS  

I

GSS  

Q

g  

Gate Threshold Voltage  
Drain-Source Leakage Current  
Gate-Source Leakage Current  
Total Gate Charge (-4.5V)  
Gate-Source Charge  
Gate-Drain Charge  
-1.0  
—  
-1.
74  
V
uA  
—  
V

GS

=
±
20V , V

DS

=0V  
—  
—  
±
100  
—  
nA  
23  
—  
V
DS
= -30V, I
D
= -3.5A,  
V
GS
= -10V  
nC  
Q

gs  

Q

gd  

T

d(on)  

T

r  

—  
2.4  
5.7  
13  
4
—  
—  
—  
Turn-On Delay Time  
Rise Time  
—  
—  
V
DD
= -30V, I
D
= -1A,  
—  
—  
ns  
V
GS
= -10V, R
GEN
= 6
 
T

d(off)  

T

f  

Turn-Off Delay Time  
Fall Time  
—  
45  
6
—  
—  
—  
C

iss  

C

oss  

C

rss  

Input Capacitance  
—  
1135  
95  
60  
—  
V
GS
=0V, V
DS
= -30V, f=1MHz  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
—  
—  
—  
—  
Diode Characteristics  
Symbol  
Parameter  
Conditions  
V

G

=V

D

=0V , Force Current  
V

GS

=0V , I

S

=-1A , T

J

=25
℃  
Min.  
—  
Typ.  
—  
Max.  
–
4.0  
-1
.2  
Unit  
A
I

S  

Continuous Source Current  
Diode Forward Voltage  
V

SD  

—  
—  
V
A: The value of R
θ
JA
is measured with the device mounted on 1in

2

FR-4 board with 2oz. Copper, in a still air environment with T
A
=25°C. The value in any given  
application depends on the user’s specific board design.  
B: Repetitive rating, pulse width limited by junction temperature.  
C:
The current rating is based on the t≤ 10s juncti
on to ambient thermal resistance rating.  
Dec.2014  
Page
2
 

WSP6047  
P-Ch MOSFET  
P-Channel Typical Characteristics  
Dec.2014  
Page
3  

WSP6047  
P-Ch MOSFET  
Dec.2014  
Page
4  

Attention
ꢀ
 
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
ꢀ
not
ꢀ
have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ  
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ  
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ  
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
ꢀ
using
ꢀ
any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ  
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ  
2,Winsok
ꢀ
power
ꢀ
assumes
ꢀ
no
ꢀ
responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
ꢀ
that
ꢀ
result
ꢀ
from
ꢀ
using
ꢀ
products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ  
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
ꢀ  
products
ꢀ
specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
ꢀ  
3,
ꢀ
Specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ  
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ  
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ  
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ  
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ  
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ  
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
ꢀ
these
ꢀ
probabilistic
ꢀ
failures
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
accidents
ꢀ  
or
ꢀ
events
ꢀ
that
ꢀ
could
ꢀ
endanger
ꢀ
human
ꢀ
lives
ꢀ
that
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
smoke
ꢀ
or
ꢀ
fire,
ꢀ
or
ꢀ
that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ  
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ  
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
ꢀ
error
ꢀ
prevention
ꢀ
circuits
ꢀ
for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ  
and
ꢀ
structural
ꢀ
design.
ꢀ  
5,In
ꢀ
the
ꢀ
event
ꢀ
that
ꢀ
any
ꢀ
or
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products(including
ꢀ
technical
ꢀ
data,
ꢀ
services)
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ  
controlled
ꢀ
under
ꢀ
any
ꢀ
of
ꢀ
applicable
ꢀ
local
ꢀ
export
ꢀ
control
ꢀ
laws
ꢀ
and
ꢀ
regulations,
ꢀ
such
ꢀ
products
ꢀ
must
ꢀ
not
ꢀ
be
ꢀ
exported
ꢀ
without
ꢀ  
obtaining
ꢀ
the
ꢀ
export
ꢀ
license
ꢀ
from
ꢀ
the
ꢀ
authorities
ꢀ
concerned
ꢀ
in
ꢀ
accordance
ꢀ
with
ꢀ
the
ꢀ
above
ꢀ
law.
ꢀ  
6,
ꢀ
No
ꢀ
part
ꢀ
of
ꢀ
this
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publication
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may
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be
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reproduced
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or
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transmitted
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in
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any
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form
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or
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by
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any
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means,
ꢀ
electronic
ꢀ
or
ꢀ
mechanical,
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including
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photocopying
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and
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recording,
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or
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any
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information
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storage
ꢀ
or
ꢀ
retrieval
ꢀ
system,
ꢀ
or
ꢀ
otherwise,
ꢀ
without
ꢀ
the
ꢀ
prior
ꢀ  
written
ꢀ
permission
ꢀ
of
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ  
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
ꢀ
it
ꢀ
is
ꢀ
not
ꢀ
guaranteed
ꢀ
for
ꢀ  
volume
ꢀ
production. Winsok
ꢀ
power
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believes
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information
ꢀ
herein
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is
ꢀ
accurate
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and
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reliable,
ꢀ
but
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no
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guarantees
ꢀ
are
ꢀ
made
ꢀ
or
ꢀ  
implied
ꢀ
regarding
ꢀ
its
ꢀ
use
ꢀ
or
ꢀ
any
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infringements
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of
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intellectual
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property
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rights
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or
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other
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rights
ꢀ
of
ꢀ
third
ꢀ
parties.
ꢀ  
8,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
information
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ  
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ  
Intend
ꢀ
to
ꢀ
use.
ꢀ  
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ  
notice.
ꢀ