Winsok-Semicon-WSP6946

WS

P

6946  

Dual N-Ch MOSFET  

General Description  

Product Summery  

The WSP6

946

is the highest performance trench  

N-ch MOSFET with extreme high cell density ,  

which provide excellent RDSON and gate charge  

for most of the synchronous buck converter  

applications .  

BVDSS  

RDSON  

ID  

3

3

m

Ω

 

60V  

6.

5

A  

Applications  

The WSP6

946

meet the RoHS and Green Product  

requirement , 100% EAS guaranteed with full  

function reliability approved.  

z

High Frequency Point-of-Load Synchronous  

Buck Converter for MB/NB/UMPC/VGA  

z

Networking DC-DC Power System  

z

Load Switch  

Features  

z

Advanced high cell density Trench technology  

z

Super Low Gate Charge  

SOP

–

8 Pin Configuration  

z

Excellent CdV/dt effect decline  

z

100% EAS Guaranteed  

z

Green Device Available  

Absolute Maximum Ratings  

Symbol  

V

DS  

Parameter  

Rating  

60  

Units  

V

Drain-Source Voltage  

V

GS  

Gate-Sou

r

ce Voltage  

±

20  

6.

5

 

V

Continuous Drain Current, V

GS

@ 10V

1  

Continuous Drain Current, V

GS

@ 10V

1  

Pulsed Drain Current

2  

A

I

D

@T

C

=25

℃  

4.5  

A

I

D

@T

C

=70

℃  

I

DM  

24  

A

EAS  

Single Pulse Avalanche Energy

3  

12  

mJ  

A

I

AS  

P

D

@T

A

=25

℃  

T

STG  

Avalanche Current  

Total Power Dissipation

4  

16  

2.

5

 

W

℃

℃

Storage

T

e

mperature Range  

Operating Junction Temperature Range  

-55 to 150  

-55 to 150  

T

J  

Thermal Data  

Symbol  

R

θ

JA  

Parameter  

Typ.  

—  

Max.  

90  

Unit  

℃

/W  

℃

/W  

Thermal Resistance Junction-ambient

1  

Thermal Resistance Junction-Case

1  

50  

R

θ

JC  

—  

Dec.2014  

Page 1  

WS

P

6946  

Dual N-Ch MOSFET  

Electrical Characteristics (T

J

=25

℃

, unless otherwise noted)  

Symbol  

Parameter  

Conditions  

V

GS

=0V , I

D

=250uA  

Min.  

60  

—  

—  

—  

1.0  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

—  

Typ.  

—  

Max.  

—  

Unit  

V

BV

DSS  

Drain-Source Breakdown Voltage  

BVDSS Temperature Coefficient  

△

BV

DSS

/△

T

J  

Reference to 25

℃

, I

D

=1mA  

V

GS

=10V , I

D

=

6.3

A  

0.044  

—  

V/

℃  

3

3  

4

5  

50  

3.0  

—  

R

DS(ON)  

Static Drain-Source On-Resistance

2  

m

Ω

 

37  

V

GS

=4.5V , I

D

=

4

A  

V

GS(th)  

Gate Threshold Voltage  

2.0  

-4.8  

—  

V

V

GS

=V

DS

, I

D

=250uA  

△

V

GS(th)  

V

mV/

℃  

V

DS

=48V , V

GS

=0V , T

J

=25

℃  

V

DS

=48V , V

GS

=0V , T

J

=55

℃  

1

I

DSS  

Drain-Source Leakage Current  

uA  

—  

5

V

GS

=

±

20V , V

DS

=0V  

I

GSS  

gfs  

Gate-Source Leakage Current  

Forward Transconductance  

Gate Resistance  

—  

±

100  

—  

nA  

S

V

DS

=5V , I

D

=4A  

28.3  

2.5  

14  

2.6  

2.2  

8

R

g  

V

DS

=0V , V

GS

=0V , f=1MHz  

5

Ω

20  

Q

g  

Total Gate Charge (10V)  

Gate-Source Charge  

Gate-Drain Charge  

Turn-On Delay Time  

Rise Time  

V

DS

=48V , V

GS

=10V , I

D

=

6.3

A  

nC  

ns  

Q

gs  

Q

gd  

T

d(on)  

T

r  

—  

—  

V

DD

=30V , V

G

EN

=10V , R

G

=

6

Ω  

I

D

=4A

,R

L

=30Ω  

6

11  

42  

T

d(off)  

T

f  

Turn-Off Delay Time  

Fall Time  

23  

6

11  

670  

70  

35  

C

iss  

C

oss  

C

rss  

Input Capacitance  

940  

91  

V

DS

=15V , V

GS

=0V , f=1MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

64  

Guaranteed Avalanche Characteristics  

Symbol  

Parameter  

Conditions  

Min.  

Typ.  

Max.  

Unit  

EAS  

Single Pulse Avalanche Energy

5  

V

DD

=25V , L=0.1mH , I

AS

=

1

2

A  

10  

—  

—  

mJ  

Diode Characteristics  

Symbol  

Parameter  

Conditions  

V

G

=V

D

=0V , Force Current  

V

GS

=0V , I

S

=1A , T

J

=25

℃  

Min.  

—  

Typ.  

—  

Max.  

2.5  

24  

Unit  

A

I

S  

I

SM  

V

SD  

t

rr  

Continuous Source Current

1,6  

Pulsed Source Current

2,6  

Diode Forward Voltage

2  

Reverse Recovery Time  

Reverse Recovery Charge  

—  

—  

A

—  

—  

1.

1  

—  

V

20  

—  

nS  

nC  

I

F

=

6.3

A , dI/dt=100A/µs , T

J

=25

℃  

Q

rr  

—  

18  

—  

Note :  

1.The data tested by surface mounted on a 1 inch

2

FR-4 board with 2OZ copper

,t<10sec

.  

2.The data tested by pulsed , pulse width

 

≦

300us , duty cycle

 

≦

2%  

3.The EAS data shows Max. rating . The test condition is V

DD

=25V,V

GS

=10V,L=0.1mH,I

AS

=

12

A  

4.The power dissipation is limited by 150

℃

junction temperature  

5.The Min. value is 100% EAS tested guarantee.  

6.The data is theoretically the same as I

D

and I

DM

, in real applications , should be limited by total power dissipation.  

Dec.2014  

Page

2

 

WS

P

6946  

Dual N-Ch MOSFET  

Typical Characteristics  

60  

53  

45  

38  

30  

20  

I

D

=

6.3

A  

V

GS

=10V  

V

GS

=7V  

V

GS

=5V  

V

GS

=4.5V  

15  

10  

5

V

GS

=3V  

0

2

4

6

8

10  

0

0.5  

1

1.5  

2

2.5  

V

GS

(V)  

VDS , Drain-to-Source Voltage (V)  

Fig.2 On-Resistance vs. Gate-Source  

Fig.1 Typical Output Characteristics  

10  

V

DS

=15V  

I

D

=6.3A  

8

6

4

2

0

T =150  

T =25  

℃

J

℃

J

0

0.3  

0.6  

0.9  

VSD , Source-to-Drain Voltage (V)  

Fig.3 Forward Characteristics Of Reverse  

Fig.4 Gate-Charge Characteristics  

1.8  

1.4  

1

2.2  

1.8  

1.4  

1.0  

0.6  

0.2  

0.6  

0.2  

-50  

0

50  

100  

150  

-50  

0

50  

100  

150  

T ,Junction

 

Temperature (  

J

)

℃

T ,

 

Junction Temperature (  

J

)

℃

Fig.5 Normalized V

GS(th)

vs. T

J  

Fig.6 Normalized R

DSON

vs. T

J  

Dec.2014  

Page

3  

WS

P

6946  

Dual N-Ch MOSFET  

2

000  

8

00  

100  

10  

F=1.0MHz  

Ciss  

Coss  

Crss  

1

5

9

13  

17  

21  

25  

VDS Drain to Source Voltage(V)  

Fig.7 Capacitance  

Fig.8 Safe Operating Area  

1

DUTY=0.5  

0.2  

0.1  

0.1  

0.05  

0.01  

P

DM  

T

ON  

0.01  

T

D =

T

ON

/T  

SINGLE  

T

Jpeak

=

T

C

+P

D

M

XR

θ

JC  

0.001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

1000  

t , Pulse Width (s)  

Fig.9 Normalized Maximum Transient Thermal Impedance  

Fig.10 Switching Time Waveform  

Fig.11 Unclamped Inductive Switching Waveform  

Dec.2014  

Page

4  

Attention

ꢀ

 

1,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

do

ꢀ

not

ꢀ

have

ꢀ

specifications

ꢀ

that

ꢀ

can

ꢀ

handle

ꢀ  

applications

ꢀ

that

ꢀ

require

ꢀ

extremely

ꢀ

high

ꢀ

levels

ꢀ

of

ꢀ

reliability,

ꢀ

such

ꢀ

as

ꢀ

life

Ͳ

support

ꢀ

systems,

ꢀ

aircraft’s

ꢀ

control

ꢀ

systems,

ꢀ

or

ꢀ  

other

ꢀ

applications

ꢀ

whose

ꢀ

failure

ꢀ

can

ꢀ

be

ꢀ

reasonably

ꢀ

expected

ꢀ

to

ꢀ

result

ꢀ

in

ꢀ

serious

ꢀ

physical

ꢀ

and/or

ꢀ

material

ꢀ

damage.

ꢀ ꢀ  

Consult

ꢀ

with

ꢀ

your

ꢀ

Winsok

ꢀ

power

ꢀ

representative

ꢀ

nearest

ꢀ

you

ꢀ

before

ꢀ

using

ꢀ

any

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ  

contained

ꢀ

herein

ꢀ

in

ꢀ

such

ꢀ

applications.

ꢀ  

2,Winsok

ꢀ

power

ꢀ

assumes

ꢀ

no

ꢀ

responsibility

ꢀ

for

ꢀ

equipment

ꢀ

failures

ꢀ

that

ꢀ

result

ꢀ

from

ꢀ

using

ꢀ

products

ꢀ

at

ꢀ

values

ꢀ

that

ꢀ

exceed,

ꢀ ꢀ  

even

ꢀ

momentarily,

ꢀ

rated

ꢀ

values

ꢀ

(such

ꢀ

as

ꢀ

maximum

ꢀ

ratings,

ꢀ

operating

ꢀ

condition

ꢀ

ranges,

ꢀ

or

ꢀ

other

ꢀ

parameters)

ꢀ

listed

ꢀ

in

ꢀ  

products

ꢀ

specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein.

ꢀ  

3,

ꢀ

Specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

stipulate

ꢀ

the

ꢀ

performance,

ꢀ  

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

in

ꢀ

the

ꢀ

independent

ꢀ

state,

ꢀ

and

ꢀ

are

ꢀ

not

ꢀ

guarantees

ꢀ

of

ꢀ

the

ꢀ  

performance,

ꢀ

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

as

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ  

equipment.

ꢀ

T

o

ꢀ

verify

ꢀ

symptoms

ꢀ

and

ꢀ

states

ꢀ

that

ꢀ

cannot

ꢀ

be

ꢀ

evaluated

ꢀ

in

ꢀ

an

ꢀ

independent

ꢀ

device,

ꢀ

the

ꢀ

customer

ꢀ

should

ꢀ

always

ꢀ  

evaluate

ꢀ

and

ꢀ

test

ꢀ

devices

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ

equipment.

ꢀ  

4,

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ

strives

ꢀ

to

ꢀ

supply

ꢀ

high

Ͳ

quality

ꢀ

high

Ͳ

reliability

ꢀ

products.

ꢀ

However,

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ  

semiconductor

ꢀ

products

ꢀ

fail

ꢀ

with

ꢀ

some

ꢀ

probability.

ꢀ

It

ꢀ

is

ꢀ

possible

ꢀ

that

ꢀ

these

ꢀ

probabilistic

ꢀ

failures

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

accidents

ꢀ  

or

ꢀ

events

ꢀ

that

ꢀ

could

ꢀ

endanger

ꢀ

human

ꢀ

lives

ꢀ

that

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

smoke

ꢀ

or

ꢀ

fire,

ꢀ

or

ꢀ

that

ꢀ

could

ꢀ

cause

ꢀ

damage

ꢀ

to

ꢀ

other

ꢀ  

property.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

adopt

ꢀ

safety

ꢀ

measures

ꢀ

so

ꢀ

that

ꢀ

these

ꢀ

kinds

ꢀ

of

ꢀ

accidents

ꢀ

or

ꢀ

events

ꢀ

cannot

ꢀ

occur.

ꢀ

Such

ꢀ  

measures

ꢀ

include

ꢀ

but

ꢀ

are

ꢀ

not

ꢀ

limited

ꢀ

to

ꢀ

protective

ꢀ

circuits

ꢀ

and

ꢀ

error

ꢀ

prevention

ꢀ

circuits

ꢀ

for

ꢀ

safe

ꢀ

design,

ꢀ

redundant

ꢀ

design,

ꢀ  

and

ꢀ

structural

ꢀ

design.

ꢀ  

5,In

ꢀ

the

ꢀ

event

ꢀ

that

ꢀ

any

ꢀ

or

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products(including

ꢀ

technical

ꢀ

data,

ꢀ

services)

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

are

ꢀ  

controlled

ꢀ

under

ꢀ

any

ꢀ

of

ꢀ

applicable

ꢀ

local

ꢀ

export

ꢀ

control

ꢀ

laws

ꢀ

and

ꢀ

regulations,

ꢀ

such

ꢀ

products

ꢀ

must

ꢀ

not

ꢀ

be

ꢀ

exported

ꢀ

without

ꢀ  

obtaining

ꢀ

the

ꢀ

export

ꢀ

license

ꢀ

from

ꢀ

the

ꢀ

authorities

ꢀ

concerned

ꢀ

in

ꢀ

accordance

ꢀ

with

ꢀ

the

ꢀ

above

ꢀ

law.

ꢀ  

6,

ꢀ

No

ꢀ

part

ꢀ

of

ꢀ

this

ꢀ

publication

ꢀ

may

ꢀ

be

ꢀ

reproduced

ꢀ

or

ꢀ

transmitted

ꢀ

in

ꢀ

any

ꢀ

form

ꢀ

or

ꢀ

by

ꢀ

any

ꢀ

means,

ꢀ

electronic

ꢀ

or

ꢀ

mechanical,

ꢀ  

including

ꢀ

photocopying

ꢀ

and

ꢀ

recording,

ꢀ

or

ꢀ

any

ꢀ

information

ꢀ

storage

ꢀ

or

ꢀ

retrieval

ꢀ

system,

ꢀ

or

ꢀ

otherwise,

ꢀ

without

ꢀ

the

ꢀ

prior

ꢀ  

written

ꢀ

permission

ꢀ

of

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ  

7,

ꢀ

Information

ꢀ

(including

ꢀ

circuit

ꢀ

diagrams

ꢀ

and

ꢀ

circuit

ꢀ

parameters)

ꢀ

herein

ꢀ

is

ꢀ

for

ꢀ

example

ꢀ

only;

ꢀ

it

ꢀ

is

ꢀ

not

ꢀ

guaranteed

ꢀ

for

ꢀ  

volume

ꢀ

production. Winsok

ꢀ

power

ꢀ

believes

ꢀ

information

ꢀ

herein

ꢀ

is

ꢀ

accurate

ꢀ

and

ꢀ

reliable,

ꢀ

but

ꢀ

no

ꢀ

guarantees

ꢀ

are

ꢀ

made

ꢀ

or

ꢀ  

implied

ꢀ

regarding

ꢀ

its

ꢀ

use

ꢀ

or

ꢀ

any

ꢀ

infringements

ꢀ

of

ꢀ

intellectual

ꢀ

property

ꢀ

rights

ꢀ

or

ꢀ

other

ꢀ

rights

ꢀ

of

ꢀ

third

ꢀ

parties.

ꢀ  

8,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

information

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ

notice

ꢀ

due

ꢀ

to

ꢀ

product/technology

ꢀ  

improvement,etc.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

refer

ꢀ

to

ꢀ

the

ꢀ

“Delivery

ꢀ

Specification”

ꢀ

for

ꢀ

the

ꢀ

Winsok

ꢀ

power

ꢀ

product

ꢀ

that

ꢀ

you

ꢀ ꢀ  

Intend

ꢀ

to

ꢀ

use.

ꢀ  

9,

ꢀ

this

ꢀ

catalog

ꢀ

provides

ꢀ

information

ꢀ

as

ꢀ

of

ꢀ

Sep.2014. Specifications

ꢀ

and

ꢀ

information

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ  

notice.

ꢀ