Winsok-Semicon-WSR200N08
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WSR
200
N
08
N-Ch MOSFET
General Description
Product Summery
The
WSR200N08
is the highest performance
trench
N-Ch MOSFET
with extreme high cell
density ,
which provide excellent RDSON
and gate charge
for most of the
I
D
R
DSON
BV
DSS
80
V
2.9m
Ω
200
A
synchronous buck converter
applications .
Applications
The
WSR200N08
meet the RoHS and Green
Product requirement
,1
00% EAS guaranteed
with full
function reliability approved.
Switching application
Power Management for Inverter Systems.
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
TO
–
2
20
FB-3L
Pin Configuration
D
D
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
G
z
Green Device Available
S
S
G
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
8
0
Units
Drain-Source Voltage
V
V
V
GS
Gate-Sou
r
ce Voltage
±
2
5
I
D
@T
C
=25
℃
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
,
T
C
=25°C
200
A
I
D
@T
C
=100
℃
A
144
790
I
DM
A
EAS
I
AS
1496
Avalanche Energy, Single pulse,L=0.5mH
mJ
A
Avalanche Current, Single pulse,L=0.5mH
200
345
173
Total Power Dissipation
4
Total Power Dissipation
4
W
W
℃
℃
P
D
@T
C
=25
℃
P
D
@T
C
=
10
0
℃
T
STG
T
J
Storage
T
e
mperature Range
-55 to 1
75
1
75
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
62.5
0.43
R
θ
JC
—
Dec.2014
Page 1
WSR200N08
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
80
—
—
2.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
0.096
2.9
—
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=10V,
I
D
=
100
A
V/
℃
m
Ω
V
3.5
R
DS(ON)
V
GS(th)
3.0
-5.5
—
4.0
—
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
10
±
100
—
I
GSS
R
g
Gate-Source Leakage Current
Gate Resistance
—
nA
V
GS
=
±
2
5
V , V
DS
=0V
V
DS
=0V , V
GS
=0V , f=1MHz
3.2
197
31
Ω
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
V
DS
=80V , V
GS
=10V , I
D
=30A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
75
—
28
—
18
—
V
DD
=50V , V
GS
=10V ,
—
42
R
G
=3
Ω
, I
D
=
30
A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
54
—
—
—
—
8154
1029
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
650
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=25V , L=0.
5
mH , I
AS
=
2
8
A
1
6
0
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
200
350
1.
2
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
—
—
V
V
GS
=0V , I
S
=1
5
A , T
J
=25
℃
—
30
52
nS
nC
I
F
=
1
5
A
,
dI/dt=100A/µs
,
T
J
=
25
℃
Q
rr
—
—
Note * : Pulse test ; pulse width
£
300
m
s, duty cycle
£
2%.
Dec.2014
Page
2
WSR200N08
N-Ch MOSFET
Typical Operating Characteristics
Power Dissipation
Drain Current
350
225
200
limited by package
300
250
200
150
100
50
175
150
125
100
75
50
25
T
C
=25
o
C,V
G
=10V
T
C
=25
o
C
0
0
0
20 40 60 80
100 120 140 160 180 200
0
20 40 60 80
100 120 140 160 180 200
T
c
–
Temperature (°C)
Case
T
c
–
C
ase
T
emperature (°C)
Safe Operation Area
1000
100
10
100us
1ms
it
m
i
L
)
n
o
(
s
d
R
10ms
DC
1
T
C
=25
o
C
0.1
0.01
0.1
1
10
100 300
V
DS
– Drain – Source Voltage (V)
Thermal Transient Impedance
1
Duty =
0.5
0.2
0.1
0.1
0.05
0.01
0.02
0.01
0.001
Single
Mounted on minimum pad
R
q
JA
: 62.5
o
C/W
0.0001
0.1
0.0001
0.001
0.01
1
10
Square Wave Pulse Duration (sec)
Dec.2014
Page
2
WSR200N08
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
5.0
4.5
4.0
3.5
3.0
2.5
320
V
GS
= 5.5,6,7,8,9,10V
280
240
5V
200
V
GS
=10V
160
4.5V
120
4V
80
40
0
2.0
1.5
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0
50
100
150
200
250
V
DS
– Drain – Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
14
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
DS
=
1
00A
I
DS
=250
m
A
12
10
8
6
4
2
0
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150 175
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
e
mperature (
°
C)
Dec.2014
Page
4
WSR200N08
N-Ch MOSFET
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.4
200
V
GS
= 10V
I
DS
= 100A
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
10
1
T
j
=175
o
C
T
j
=25
o
C
R
ON
@T
j
=25
o
C: 2.9m
W
-50 -25
0
25 50 75
100 125 150 175
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
10
12000
10500
Frequency=1MHz
V
DS
= 64V
I
DS
= 100A
9
8
7
6
5
4
3
2
1
0
9000
7500
6000
4500
3000
1500
0
Ciss
Coss
Crss
0
40
80
120
160
200
0
8
16
24
32
40
V
DS
– Drain – Source Voltage (V)
Q
G
–
G
ate Charge (nC)
Dec.2014
Page
5
WSR200N08
N-Ch MOSFET
Package Information TO-220
AB
TO-220FB-3L
SYMBOL MIN
NOM
MAX
MIN
NOM
MAX
A
A1
A2
b
4.40
1.27
2.35
0.77
1.17
0.48
4.57 4.70 0.173 0.180
0.185
1.30 1.33 0.050 0.051
0.052
2.40 2.50 0.093 0.094
0.098
0.80 0.90 0.030 0.031
0.035
1.27 1.36 0.046 0.050
0.054
0.50 0.56 0.019 0.020
0.022
b2
c
D
15.40 15.60
15.80 0.606 0.614
0.622
D1
DEP
E
9.00
0.05
9.10 9.20 0.354 0.358
0.362
0.10 0.20 0.002 0.004
0.008
9.80 10.00
10.20 0.386 0.394
0.402
8.70 0.343
9.80 10.00
10.20 0.386 0.394
0.402
E1
E2
e
–
–
–
–
2.54 BSC
5.08 BSC
0.100 BSC
0.200 BSC
e1
H1
L
6.40
6.50 6.60
0.252 0.256 0.260
12.75 13.50
13.65 0.502 0.531 0.537
L1
L2
P
–
3.10 3.30
2.50 REF
–
0.122 0.130
0.098 REF
3.50
3.50
2.73
5
°
3.60 3.63
0.138 0.142 0.143
3.60 3.63
0.138 0.142 0.143
2.80 2.87
0.107 0.110 0.113
P1
Q
θ
1
θ
2
θ
3
7
°
3
°
3
°
9
°
5
°
5
°
5
°
1
°
1
°
7
°
3
°
3
°
9
°
5
°
5
°
1
°
1
°
Dec.2014
Page
6
Attention
ꢀ
1,
ꢀ
Any
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and
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all
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Winsok
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described
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herein
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have
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that
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can
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handle
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applications
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
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or
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other
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applications
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whose
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failure
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can
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be
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reasonably
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expected
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to
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result
ꢀ
in
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serious
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physical
ꢀ
and/or
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material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
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your
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Winsok
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power
ꢀ
representative
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nearest
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you
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before
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using
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any
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Winsok
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power
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products
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described
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or
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contained
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herein
ꢀ
in
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such
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applications.
ꢀ
2,Winsok
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power
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assumes
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no
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responsibility
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for
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equipment
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failures
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that
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result
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from
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using
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products
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at
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values
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that
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exceed,
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even
ꢀ
momentarily,
ꢀ
rated
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values
ꢀ
(such
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as
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maximum
ꢀ
ratings,
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operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
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other
ꢀ
parameters)
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listed
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in
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products
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specifications
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of
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any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein.
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3,
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Specifications
ꢀ
of
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any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein
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stipulate
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the
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performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
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the
ꢀ
described
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products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
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are
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not
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guarantees
ꢀ
of
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the
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performance,
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characteristics,
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and
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functions
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of
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the
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described
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products
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as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
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products
ꢀ
or
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equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
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be
ꢀ
evaluated
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in
ꢀ
an
ꢀ
independent
ꢀ
device,
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the
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customer
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should
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always
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evaluate
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and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
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the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
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any
ꢀ
and
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all
ꢀ
semiconductor
ꢀ
products
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fail
ꢀ
with
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some
ꢀ
probability.
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It
ꢀ
is
ꢀ
possible
ꢀ
that
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these
ꢀ
probabilistic
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failures
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could
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give
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rise
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to
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accidents
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or
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events
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that
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could
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endanger
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human
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lives
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that
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could
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give
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rise
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to
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smoke
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or
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fire,
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or
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that
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could
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cause
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damage
ꢀ
to
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other
ꢀ
property.
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When
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designing
ꢀ
equipment,
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adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
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that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
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or
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events
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cannot
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occur.
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Such
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measures
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include
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but
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are
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not
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limited
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to
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protective
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circuits
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and
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error
ꢀ
prevention
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circuits
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for
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safe
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design,
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redundant
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design,
ꢀ
and
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structural
ꢀ
design.
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5,In
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the
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event
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that
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any
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or
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all
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exported
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export
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license
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from
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the
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concerned
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in
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with
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above
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law.
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No
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of
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Winsok
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Semiconductor
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CO.,
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LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
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circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
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is
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for
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example
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only;
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is
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volume
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described
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herein
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subject
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to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
ꢀ
to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
