Winsok-Semicon-WSR70P10D

WSR70P10D  

P-Ch MOSFET  

General Description  

Product Summery  

The

WSR70P10D

is the highest performance  

trench P-Ch MOSFET with extreme high cell  

density ,

 

which provide excellent R

DSON

and gate  

charge for

 

most of the small power switching  

and load

 

switch applications.  

BV

DSS  

R

DSON  

I

D  

-100V  

1

9

mΩ  

-70A  

Applications  

The

WSR70P10D

meet the RoHS and  

Green Product

 

requirement with full  

function reliability approved.  

z

Inverters  

TO-220

AB

Pin Configuration  

Features  

z

Advanced high cell density Trench technology  

z

Super Low Gate Charge  

z

Excellent Cdv/dt effect decline  

z

Green Device Available  

Absolute Maximum Ratings  

Rating  

Parameter  

Symbol  

Unit  

Common Ratings

(T

C

=25°C Unless Otherwise Noted)  

V

DSS  

V

GSS  

T

J  

Drain-Source Voltage  

-100  

±25  

V

Gate-Source Voltage  

Maximum Junction Temperature  

Storage Temperature Range  

Diode Continuous Forward Current  

175  

°C  

°C  

A

T

STG  

I

S  

-55 to 175  

-70  

T

C

=25°C  

Mounted on Large Heat Sink  

①

300μs Pulse Drain Current Tested  

T

C

=25°C  

T

C

=25°C  

T

C

=100°C  

T

C

=25°C  

T

C

=100°C  

-240  

–

7

0  

-4

5  

1

90  

9

5  

A

A

I

DP  

②

Continuous Drain Current(V

GS

=-10V)  

Maximum Power Dissipation  

I

D  

P

D  

W

Thermal Resistance-Junction to Case  

Thermal Resistance-Junction to Ambient  

R

θ

JC  

R

θ

JA  

0.8  

°C/W  

°C/W  

62.5  

Drain-Source Avalanche Ratings  

③

Avalanche Energy, Single Pulsed  

400  

mJ  

E

AS  

Rev1.0 Mar.2022  

Page 1  

WSR70P10D  

P-Ch MOSFET  

Electrical Characteristics

(T

C

=25°C Unless Otherwise Noted)  

Symbol  

Parameter  

Test Condition  

Min.  

Typ.  

Max.  

Unit  

Static Characteristics  

V

GS

=0V, I

DS

=-250µA  

V

DS

=-100V, V

GS

=0V  

BV

DSS  

Drain-Source Breakdown Voltage  

-100  

V

-1  

-30  

I

DSS  

Zero Gate Voltage Drain Current  

µA  

T

J

=125°C  

V

DS

=V

GS

, I

DS

=-250µA  

V

GS

=±25V, V

DS

=0V  

V

GS

=-10V, I

DS

=-

2

0A  

V

GS(th)  

I

GSS  

-1.6  

19  

–

1.2  

Gate Threshold Voltage  

–

2.5  

±100  

25  

V

Gate Leakage Current  

nA  

mΩ  

④

R

DS(ON)  

Drain-Source On-state Resistance  

Diode Characteristics  

④

I

SD

=-30A, V

GS

=0V  

Diode Forward Voltage  

-1.

2  

V

V

SD  

t

rr  

Reverse Recovery Time  

208  

560  

ns  

nC  

I

SD

=-

5

A, dl

SD

/dt=100A/µs  

Q

rr  

Reverse Recovery Charge  

⑤

Dynamic Characteristics  

V

GS

=0V,V

DS

=0V,F=1MHz  

R

G  

C

iss  

C

oss  

C

rss  

t

d(ON)  

t

r  

Gate Resistance  

2

4230  

388  

26  

Ω

Input Capacitance  

V

GS

=0V,  

V

DS

=-50V,  

Frequency=1.0MHz  

pF  

Output Capacitance  

Reverse Transfer Capacitance  

Turn-on Delay Time  

Turn-on Rise Time  

Turn-off Delay Time  

26  

78  

V

DD

=-50V,I

DS

=-

5

A,  

ns  

V

GEN

=-10V,R

G

=6Ω  

t

d(OFF)  

t

f  

200  

210  

Turn-off Fall Time  

⑤

Gate Charge Characteristics  

Q

g  

Q

gs  

Q

gd  

Total Gate Charge  

Gate-Source Charge  

Gate-Drain Charge  

80  

V

DS

=-

50

V, V

GS

=-10V,  

I

DS

=-

5

A  

nC  

15.6  

17.2  

①

Pulse width limited by safe operating area.  

Notes:  

②

Calculated continuous current based on maximum allowable

 

junction temperature.  

③

Limited by T

Jmax

, I

AS

=-40A, V

DD

=-60V, R

G

= 50Ω, Starting T

J

= 25

°

C.  

④

Pulse test;Pulse width

≤

300µs, duty cycle

≤

2%.  

⑤

Guaranteed by design, not subject to production testing.  

Rev1.0 Mar.2022  

Page

2  

WSR70P10D  

P-Ch MOSFET  

Typical Characteristics  

Output Characteristics  

Drain-Source On Resistance  

100  

80  

60  

40  

20  

0

100  

80  

60  

40  

20  

0

-10V  

-8V  

-6V  

-5V  

-10V  

60  

-3V  

0

1

2

3

4

5

0

30  

90  

120  

-V

DS

– Drain-Source Voltage (V)  

-I

D

– Drain Current (A)  

Drain-Source On Resistance  

Source-Drain Diode Forward  

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

100  

10  

1

V

GS

=-10V  

I

D

=-60A  

T

J

=175°C  

T

J

=25°C  

T

J

=25°C  

Rds(on)=1

9

m

Ω  

0.1  

0.3  

0.6  

0.9  

1.2  

1.5  

1.8  

-50  

-25  

0

25  

50  

75  

100 125 150  

-V

SD

– Source-Drain Voltage (V)  

T

J

– Junction Temperature (

°

C)  

Gate Charge  

Capacitance  

10  

9

8

7

6

5

4

3

2

1

0

6000  

4500  

3000  

1500  

0

VDS=-80V  

IDS=-60A  

Frequency=1.0MHz  

Ciss  

Coss  

Crss  

1

10  

100  

0

20  

40  

70  

100  

-V

DS

– Drain-Source Voltage (V)  

Q

G

– Gate Charge (nC)  

Rev1.0 Mar.2022  

Page

3  

WSR70P10D  

P-Ch MOSFET  

Typical Characteristics  

Drain Current  

Power Dissipation  

70  

60  

50  

40  

30  

20  

10  

0

200  

180  

160  

140  

120  

100  

80  

60  

40  

20  

VGS=-10V  

25 50  

0

0

25  

50  

75  

100  

125  

150  

175  

75  

100  

125  

150  

175  

T

J

– Junction Temperature (

°

C)  

T

J

– Junction Temperature (

°

C)  

Safe Operation Area  

Drain Current  

150  

125  

100  

75  

Ids=-

2

0A  

100  

10  

10µs  

100µs  

1ms  

DC  

10ms  

1

50  

0.1  

0.01  

25  

T

C

=25°C  

0.01 0.1  

0

0

1

2

3

4

5

6

7

8

9

10  

1

10  

100  

-V

GS

– Gate-Source Voltage (V)  

-V

DS

– Drain-Source Voltage (V)  

Thermal Transient Impedance  

10  

1

Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse  

0.1  

Single Pulse  

0.01  

R

θ

JC

=

0.8°C/W  

0.001  

0.0001  

0.001  

0.01  

0.1  

1

10  

Square Wave Pulse Duration (sec)  

Rev1.0 Mar.2022  

Page

4  

Attention

ꢀ

 

1,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

do

ꢀ

not

ꢀ

have

ꢀ

specifications

ꢀ

that

ꢀ

can

ꢀ

handle

ꢀ  

applications

ꢀ

that

ꢀ

require

ꢀ

extremely

ꢀ

high

ꢀ

levels

ꢀ

of

ꢀ

reliability,

ꢀ

such

ꢀ

as

ꢀ

life

Ͳ

support

ꢀ

systems,

ꢀ

aircraft’s

ꢀ

control

ꢀ

systems,

ꢀ

or

ꢀ  

other

ꢀ

applications

ꢀ

whose

ꢀ

failure

ꢀ

can

ꢀ

be

ꢀ

reasonably

ꢀ

expected

ꢀ

to

ꢀ

result

ꢀ

in

ꢀ

serious

ꢀ

physical

ꢀ

and/or

ꢀ

material

ꢀ

damage.

ꢀ ꢀ  

Consult

ꢀ

with

ꢀ

your

ꢀ

Winsok

ꢀ

power

ꢀ

representative

ꢀ

nearest

ꢀ

you

ꢀ

before

ꢀ

using

ꢀ

any

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ  

contained

ꢀ

herein

ꢀ

in

ꢀ

such

ꢀ

applications.

ꢀ  

2,Winsok

ꢀ

power

ꢀ

assumes

ꢀ

no

ꢀ

responsibility

ꢀ

for

ꢀ

equipment

ꢀ

failures

ꢀ

that

ꢀ

result

ꢀ

from

ꢀ

using

ꢀ

products

ꢀ

at

ꢀ

values

ꢀ

that

ꢀ

exceed,

ꢀ ꢀ  

even

ꢀ

momentarily,

ꢀ

rated

ꢀ

values

ꢀ

(such

ꢀ

as

ꢀ

maximum

ꢀ

ratings,

ꢀ

operating

ꢀ

condition

ꢀ

ranges,

ꢀ

or

ꢀ

other

ꢀ

parameters)

ꢀ

listed

ꢀ

in

ꢀ  

products

ꢀ

specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein.

ꢀ  

3,

ꢀ

Specifications

ꢀ

of

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

stipulate

ꢀ

the

ꢀ

performance,

ꢀ  

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

in

ꢀ

the

ꢀ

independent

ꢀ

state,

ꢀ

and

ꢀ

are

ꢀ

not

ꢀ

guarantees

ꢀ

of

ꢀ

the

ꢀ  

performance,

ꢀ

characteristics,

ꢀ

and

ꢀ

functions

ꢀ

of

ꢀ

the

ꢀ

described

ꢀ

products

ꢀ

as

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ  

equipment.

ꢀ

T

o

ꢀ

verify

ꢀ

symptoms

ꢀ

and

ꢀ

states

ꢀ

that

ꢀ

cannot

ꢀ

be

ꢀ

evaluated

ꢀ

in

ꢀ

an

ꢀ

independent

ꢀ

device,

ꢀ

the

ꢀ

customer

ꢀ

should

ꢀ

always

ꢀ  

evaluate

ꢀ

and

ꢀ

test

ꢀ

devices

ꢀ

mounted

ꢀ

in

ꢀ

the

ꢀ

customer’s

ꢀ

products

ꢀ

or

ꢀ

equipment.

ꢀ  

4,

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ

strives

ꢀ

to

ꢀ

supply

ꢀ

high

Ͳ

quality

ꢀ

high

Ͳ

reliability

ꢀ

products.

ꢀ

However,

ꢀ

any

ꢀ

and

ꢀ

all

ꢀ  

semiconductor

ꢀ

products

ꢀ

fail

ꢀ

with

ꢀ

some

ꢀ

probability.

ꢀ

It

ꢀ

is

ꢀ

possible

ꢀ

that

ꢀ

these

ꢀ

probabilistic

ꢀ

failures

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

accidents

ꢀ  

or

ꢀ

events

ꢀ

that

ꢀ

could

ꢀ

endanger

ꢀ

human

ꢀ

lives

ꢀ

that

ꢀ

could

ꢀ

give

ꢀ

rise

ꢀ

to

ꢀ

smoke

ꢀ

or

ꢀ

fire,

ꢀ

or

ꢀ

that

ꢀ

could

ꢀ

cause

ꢀ

damage

ꢀ

to

ꢀ

other

ꢀ  

property.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

adopt

ꢀ

safety

ꢀ

measures

ꢀ

so

ꢀ

that

ꢀ

these

ꢀ

kinds

ꢀ

of

ꢀ

accidents

ꢀ

or

ꢀ

events

ꢀ

cannot

ꢀ

occur.

ꢀ

Such

ꢀ  

measures

ꢀ

include

ꢀ

but

ꢀ

are

ꢀ

not

ꢀ

limited

ꢀ

to

ꢀ

protective

ꢀ

circuits

ꢀ

and

ꢀ

error

ꢀ

prevention

ꢀ

circuits

ꢀ

for

ꢀ

safe

ꢀ

design,

ꢀ

redundant

ꢀ

design,

ꢀ  

and

ꢀ

structural

ꢀ

design.

ꢀ  

5,In

ꢀ

the

ꢀ

event

ꢀ

that

ꢀ

any

ꢀ

or

ꢀ

all

ꢀ

Winsok

ꢀ

power

ꢀ

products(including

ꢀ

technical

ꢀ

data,

ꢀ

services)

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

are

ꢀ  

controlled

ꢀ

under

ꢀ

any

ꢀ

of

ꢀ

applicable

ꢀ

local

ꢀ

export

ꢀ

control

ꢀ

laws

ꢀ

and

ꢀ

regulations,

ꢀ

such

ꢀ

products

ꢀ

must

ꢀ

not

ꢀ

be

ꢀ

exported

ꢀ

without

ꢀ  

obtaining

ꢀ

the

ꢀ

export

ꢀ

license

ꢀ

from

ꢀ

the

ꢀ

authorities

ꢀ

concerned

ꢀ

in

ꢀ

accordance

ꢀ

with

ꢀ

the

ꢀ

above

ꢀ

law.

ꢀ  

6,

ꢀ

No

ꢀ

part

ꢀ

of

ꢀ

this

ꢀ

publication

ꢀ

may

ꢀ

be

ꢀ

reproduced

ꢀ

or

ꢀ

transmitted

ꢀ

in

ꢀ

any

ꢀ

form

ꢀ

or

ꢀ

by

ꢀ

any

ꢀ

means,

ꢀ

electronic

ꢀ

or

ꢀ

mechanical,

ꢀ  

including

ꢀ

photocopying

ꢀ

and

ꢀ

recording,

ꢀ

or

ꢀ

any

ꢀ

information

ꢀ

storage

ꢀ

or

ꢀ

retrieval

ꢀ

system,

ꢀ

or

ꢀ

otherwise,

ꢀ

without

ꢀ

the

ꢀ

prior

ꢀ  

written

ꢀ

permission

ꢀ

of

ꢀ

Winsok

ꢀ

power

ꢀ

Semiconductor

ꢀ

CO.,

ꢀ

LTD.

ꢀ  

7,

ꢀ

Information

ꢀ

(including

ꢀ

circuit

ꢀ

diagrams

ꢀ

and

ꢀ

circuit

ꢀ

parameters)

ꢀ

herein

ꢀ

is

ꢀ

for

ꢀ

example

ꢀ

only;

ꢀ

it

ꢀ

is

ꢀ

not

ꢀ

guaranteed

ꢀ

for

ꢀ  

volume

ꢀ

production. Winsok

ꢀ

power

ꢀ

believes

ꢀ

information

ꢀ

herein

ꢀ

is

ꢀ

accurate

ꢀ

and

ꢀ

reliable,

ꢀ

but

ꢀ

no

ꢀ

guarantees

ꢀ

are

ꢀ

made

ꢀ

or

ꢀ  

implied

ꢀ

regarding

ꢀ

its

ꢀ

use

ꢀ

or

ꢀ

any

ꢀ

infringements

ꢀ

of

ꢀ

intellectual

ꢀ

property

ꢀ

rights

ꢀ

or

ꢀ

other

ꢀ

rights

ꢀ

of

ꢀ

third

ꢀ

parties.

ꢀ  

8,

ꢀ

Any

ꢀ

and

ꢀ

all

ꢀ

information

ꢀ

described

ꢀ

or

ꢀ

contained

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ

notice

ꢀ

due

ꢀ

to

ꢀ

product/technology

ꢀ  

improvement,etc.

ꢀ

When

ꢀ

designing

ꢀ

equipment,

ꢀ

refer

ꢀ

to

ꢀ

the

ꢀ

“Delivery

ꢀ

Specification”

ꢀ

for

ꢀ

the

ꢀ

Winsok

ꢀ

power

ꢀ

product

ꢀ

that

ꢀ

you

ꢀ ꢀ  

Intend

ꢀ

to

ꢀ

use.

ꢀ  

9,

ꢀ

this

ꢀ

catalog

ꢀ

provides

ꢀ

information

ꢀ

as

ꢀ

of

ꢀ

Sep.2014. Specifications

ꢀ

and

ꢀ

information

ꢀ

herein

ꢀ

are

ꢀ

subject

ꢀ

to

ꢀ

change

ꢀ

without

ꢀ  

notice.

ꢀ