Winsok-Semicon-WST05N10L
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WST05N10L
N-Ch MOSFET
General Description
Product Summery
The WST05N10L is the highest performance
trench N-Ch
MOSFET with extreme high cell
density ,
which provide excellent RDSON and
gate charge
for most of the small power switching
and load
switch applications.
BVDSS
RDSON
ID
100V
120
mΩ
3
.0
A
Applications
The WST05N10L meet the RoHS and Green
Product requirement
with full function
reliability approved.
z
Battery protection
z
Uninterruptible power supply
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
SOT-23-3L
Pin Configuration
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
100
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
GS
±
20
V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
3
.0
A
I
D
@T
c
=25
℃
I
D
@T
c
=70
℃
I
DM
2.
1
A
18
A
1.5
Total Power Dissipation
W
℃
℃
P
D
@T
c
=25
℃
T
STG
Storage
T
e
mperature Range
-55 to 1
75
-55
to
175
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
300
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
Thermal Resistance Junction-Case
150
R
θJC
—
Rev:1.0 May.2019
Page 1
WST05N10L
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
100
—
Typ.
—
Max.
Unit
BV
DSS
Drain-Source Breakdown Voltage
—
V
120
145
V
GS
=10V , I
D
=
3
A
V
GS
=4.5V , I
D
=
3
A
V
GS
=V
DS
, I
D
=250uA
145
m
Ω
R
DS(ON)
Static Drain-Source On-Resistance
170
—
V
GS(th)
I
DSS
I
DSS
I
GSS
gfs
Gate Threshold Voltage
Drain-Source Leakage Current
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
0.5
—
1.
2
—
1.7
1
V
V
DS
=80V , V
GS
=0V , T
J
=25
℃
V
DS
=80V , V
GS
=0V , T
J
=25
℃
uA
uA
nA
S
—
—
5
V
GS
=
±
20V , V
DS
=0V
—
—
±
100
—
5
V
DS
=5V , I
D
=
3
A
—
20.5
2.1
3.3
6
Q
g
—
—
V
DS
=50
V
,
I
D
=3A,
V
GS
=10V
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
—
—
Turn-On Delay Time
Rise Time
—
—
—
4
—
V
DD
=50
V
,
R
L
=19Ω
V
GS
=10
V
,
R
G
=3Ω
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
20
4
—
—
—
C
iss
C
oss
C
rss
Input Capacitance
—
650
25
20
—
V
DS
=50
V
,
V
GS
=0
V
,
F=1.0MHz
pF
Output Capacitance
—
—
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Continuous Source Current
Diode Forward Voltage
2
Conditions
Min.
—
Typ.
—
Max.
3.0
Unit
A
I
S
V
G
=V
D
=0V , Force Current
—
—
1.2
V
V
GS
=0V , I
S
=1A , T
J
=25
℃
V
SD
Notes:
1
、
Repetitive Rating: Pulse width limited by maximum junction temperature.
2
、
Surface Mounted on FR4 Board, t ≤ 10 sec.
3
、
Pulse
T
e
st: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4
、
Guaranteed by design, not subject to productio
Rev:1.0 May.2019
Page
2
WST05N10L
N-Ch MOSFET
Typical Characteristics
℃
T
J
-Junction
T
e
mperature(
)
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
Figure 4 Rdson-Junction Temperature
Vgs Gate-Source Voltage (V)
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
I
D
– Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
Figure 3 Rdson-
Drain Current
Rev:1.0 May.2019
Page
3
WST05N10L
N-Ch MOSFET
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Capacitance vs Vds
Figure 9 BV
DSS
vs Junction Temperature
Vds Drain-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 8 Safe Operation Area
Figure 10 Power De-rating
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
Rev:1.0 May.2019
Page
4
Attention
ꢀ
1,
ꢀ
Any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein
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do
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not
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have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
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your
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Winsok
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power
ꢀ
representative
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nearest
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you
ꢀ
before
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using
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any
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Winsok
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power
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products
ꢀ
described
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or
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contained
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herein
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in
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such
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applications.
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power
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assumes
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no
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responsibility
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for
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equipment
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failures
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that
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result
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from
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using
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products
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at
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values
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that
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exceed,
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even
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momentarily,
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rated
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values
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(such
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as
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maximum
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ratings,
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operating
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condition
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ranges,
ꢀ
or
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other
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parameters)
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listed
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in
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products
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specifications
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of
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any
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and
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all
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products
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described
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or
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contained
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herein.
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3,
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Specifications
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of
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any
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and
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all
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described
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or
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contained
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herein
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stipulate
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the
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performance,
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characteristics,
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and
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functions
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of
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the
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described
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products
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in
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the
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independent
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state,
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and
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are
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not
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guarantees
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of
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the
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performance,
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characteristics,
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and
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functions
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of
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the
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described
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products
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as
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mounted
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in
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the
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customer’s
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products
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or
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equipment.
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T
o
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verify
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symptoms
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and
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states
ꢀ
that
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cannot
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be
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evaluated
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in
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an
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independent
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device,
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the
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customer
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should
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always
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evaluate
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and
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test
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devices
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mounted
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in
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the
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customer’s
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products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
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strives
ꢀ
to
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supply
ꢀ
high
Ͳ
quality
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high
Ͳ
reliability
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products.
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However,
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any
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and
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all
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semiconductor
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products
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fail
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with
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some
ꢀ
probability.
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It
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is
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possible
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that
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these
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probabilistic
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failures
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could
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give
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rise
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to
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accidents
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or
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events
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that
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could
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endanger
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human
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lives
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that
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give
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rise
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to
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smoke
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fire,
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could
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cause
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damage
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to
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other
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property.
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When
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designing
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equipment,
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adopt
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safety
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measures
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so
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that
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these
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kinds
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of
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accidents
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occur.
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Such
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include
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are
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not
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limited
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to
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protective
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circuits
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and
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error
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prevention
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circuits
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for
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safe
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redundant
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design,
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and
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structural
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design.
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all
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export
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license
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from
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the
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concerned
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in
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with
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above
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of
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Semiconductor
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CO.,
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Information
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(including
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circuit
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diagrams
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circuit
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parameters)
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information
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described
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contained
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herein
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are
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subject
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to
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change
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without
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notice
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due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
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designing
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equipment,
ꢀ
refer
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to
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the
ꢀ
“Delivery
ꢀ
Specification”
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for
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the
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Winsok
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power
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product
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that
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you
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Intend
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to
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use.
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9,
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this
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catalog
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provides
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information
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as
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of
ꢀ
Sep.2014. Specifications
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and
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information
ꢀ
herein
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are
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subject
ꢀ
to
ꢀ
change
ꢀ
without
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notice.
ꢀ
