Winsok-Semicon-WST2301
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WST2301
P-Ch MOSFET
General Description
Product Summery
The
WST2301
is the highest performance trench
P-ch MOSFET with extreme high cell density ,
which provide excellent RDSON and gate
charge for
most of the small power switching
and load
switch applications.
BVDSS
RDSON
1
00
m
Ω
ID
-20V
-2.
9
A
Applications
The
WST2301
meet the RoHS and Green
Product requirement
with full function
reliability approved.
z
High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOT
–
23
N
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
-20
±
12
V
GS
V
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
-2.
9
-1.9
A
I
D
@T
c
=25
℃
I
D
@T
c
=70
℃
I
DM
A
-10
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
125
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
Dec.2014
Page 1
WST2301
P-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Reference to 25
℃
, I
D
=-1mA
GS
=-4.5V , I
D
=-2A
Min.
-20
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
-0.016
10
0
—
V/
℃
V
—
130
170
220
-1
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
V
GS
=-2.5V , I
D
=-1A
V
GS
=-1.8V , I
D
=-1.5A
—
145
185
-0.5
3.97
—
V
GS(th)
Gate Threshold Voltage
-0.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
—
mV/
℃
V
DS
=-16V , V
GS
=0V , T
J
=25
℃
V
DS
=-16V , V
GS
=0V , T
J
=55
℃
-1
I
DSS
Drain-Source Leakage Current
uA
—
-5
V
GS
=
±
8V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-2A
5.9
13.1
5.6
0.72
1.45
4
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
26.2
7.8
1.0
2.0
8.0
46
Ω
Q
g
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=-15V , V
GS
=-4.5V , I
D
=-2A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
V
DD
=-15V , V
GS
=-4.5V , R
G
=3.3
Ω
25.6
26
I
D
=-2A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
52
12.4
332
48
24.8
465
67
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
42
59
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
-2.4
-10
-1.2
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
—
V
—
23
nS
nC
I
F
=-2A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
4.7
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WST2301
P-Ch MOSFET
Typical Characteristics
280
240
200
160
120
80
10
9
8
7
6
5
4
3
2
1
0
I
D
=-2A
V
GS
=-5V
V
GS
=-4.5V
V
GS
=-3V
V
GS
=-2.5V
V
GS
=-1.8V
2
4
6
8
10
0
0.5
1
1.5
2
-V
GS
(V)
-V
DS
, Drain-to-Source Voltage (V)
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
5
4
3
2
T =150
T =25
℃
J
℃
J
1
0
0
0.3
0.6
0.9
1.2
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
J
)
T ,
Junction Temperature (
J
)
℃
℃
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Dec.2014
Page
3
WST2301
P-Ch MOSFET
1000
100
10
100.00
10.00
1.00
F=1.0MHz
Ciss
100us
10ms
100ms
Coss
Crss
1s
0.10
DC
T =25
℃
A
Single Pulse
0.01
1
5
9
13
17
21
0.1
1
10
100
-V
DS
(V)
-V
DS
, Drain to Source Voltage (V)
Fig.8 Safe Operating Area
Fig.7 Capacitance
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
A
+
P
DM
x R
θ
JA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Dec.2014
Page
4
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life
Ͳ
support
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aircraft’s
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control
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in
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o
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Sep.2014. Specifications
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