Winsok-Semicon-WST2335
| Part # | Winsok-Semicon-WST2335 |
Download  | Winsok-Semicon-WST2335 |
WS
T23
3
5
P-Ch MOSFET
General Description
Product Summery
The WST23
3
5 is the highest performance
trench P-ch
MOSFET with extreme high cell
density
,
which provide excellent RDSON and
gate charge
for most of the synchronous
buck converter
applications .
BVDSS
RDSON
ID
–
4.4
A
-20V
5
0m
Ω
Applications
The WST23
3
5 meet the RoHS and
Green Product requirement,with full
function reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOT
–
23
N
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
-20
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
12
–
4.4
V
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
Pulsed Drain Current
2
A
I
D
@T
C
=25
℃
I
D
@T
C
=70
℃
I
DM
-2.
8
A
-14
1
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
125
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-Ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
Rev:1.0 May.2019
Page 1
WS
T23
3
5
P-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-20
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-4.5V , I
D
=-3A
-0.014
50
—
V/
℃
—
60
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
V
GS
=-2.5V , I
D
=-2A
—
73
90
V
GS(th)
Gate Threshold Voltage
-0.5
—
-0.8
3.95
—
-1.2
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=-16V , V
GS
=0V , T
J
=25
℃
V
DS
=-16V , V
GS
=0V , T
J
=55
℃
—
-1
I
DSS
Drain-Source Leakage Current
uA
—
—
-5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
—
±
100
—
nA
S
V
DS
=-5V , I
D
=-3A
—
12.8
10.2
1.89
3.1
Q
g
—
14.3
2.6
V
DS
=-15V , V
GS
=-4.5V , I
D
=-3A
nC
Q
gs
Q
gd
T
d(on)
T
r
—
—
4.3
Turn-On Delay Time
Rise Time
—
5.6
11.2
73
V
DD
=-10V , V
GS
=-4.5V ,
—
40.8
33.6
18
ns
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
R
G
=3.3
Ω
, I
D
=-3A
—
67
—
36
C
iss
C
oss
C
rss
Input Capacitance
—
857
114
108
1200
160
151
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
—
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=-1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
Unit
A
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
–
4.3
I
S
I
SM
V
SD
t
rr
-14
-1
—
—
A
—
—
V
—
21.8
6.9
—
—
nS
nC
I
F
=-3A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev:1.0 May.2019
Page
2
WS
T23
3
5
P-Ch MOSFET
Typical Characteristics
100
80
-I
D
=3A
60
40
1
2
3
4
5
VGS (V)
Fig.2 On-Resistance vs. G-S Voltage
Fig.1 Typical Output Characteristics
4
3
T =150
J
T =25
J
℃
℃
2
1
0
0
0.2
0.4
0.6
0.8
1
-V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
Fig.4 Gate-charge Characteristics
1.8
1.8
1.4
1.0
0.6
0.2
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
J
50
100
150
T ,Junction
Temperature (
)
T ,
Junction Temperature (
J
)
℃
℃
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Rev:1.0 May.2019
Page
3
WS
T23
3
5
P-Ch MOSFET
1000
100
10
100.00
10.00
1.00
Ciss
100us
10ms
Coss
Crss
100ms
1s
0.10
DC
T =25
℃
A
F=1.0MHz
Single Pulse
0.01
1
5
9
13
-V
DS
(V)
17
21
0.1
1
10
100
-V
DS
(V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
C
+
P
DM
x R
θ
JC
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Rev:1.0 May.2019
Page
4
Attention
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Any
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handle
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applications
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
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systems,
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aircraft’s
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control
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systems,
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or
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other
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applications
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whose
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failure
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can
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reasonably
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expected
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to
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result
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in
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serious
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physical
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and/or
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material
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Consult
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with
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representative
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nearest
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you
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before
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momentarily,
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(such
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or
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in
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o
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adopt
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When
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Specification”
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Sep.2014. Specifications
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