Winsok-Semicon-WST2337A
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WST2337
A
P-Ch MOSFET
General Description
Product Summery
The
WST2337A
is the highest performance
trench P-Ch
MOSFET with extreme high cell
density ,
which provide excellent RDSON
and gate charge
for most of the small power
switching and load
switch applications.
BVDSS
RDSON
30
mΩ
ID
–
15
V
–
4.8
A
Applications
The
WST2337A
meet the RoHS
and Green Product
requirement
with full function reliability approved.
z
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOT
–
23
-3L
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
–
15
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ -4.5V
1
Continuous Drain Current, V
GS
@ -4.5V
1
V
GS
±
12
–
4.8
–
3.
4
–
2
4
V
A
I
D
@T
c
=25
℃
I
D
@T
c
=70
℃
I
DM
A
A
Pulsed Drain Current
Total Power Dissipation
3
1.4
P
D
@T
A
=25
℃
T
STG
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
125
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
Dec.2014
Page 1
WST2337A
P-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
–
1
5
—
Typ.
Max.
Unit
BV
DSS
Drain-Source Breakdown Voltage
—
30
45
—
V
48
V
GS
=-4.5V , I
D
=-4
.1
A
R
DS(ON)
Static Drain-Source On-Resistance
m
Ω
65
-1.2
-1
V
GS
=-2.5V , I
D
=-3A
—
-0.
45
—
V
GS
=V
DS
, I
D
=-250uA
V
GS(th)
I
DSS
Gate Threshold Voltage
-0.7
—
V
Drain-Source Leakage Current
V
DS
=-12V , V
GS
=0V , T
J
=25
℃
uA
I
GSS
Q
g
Gate-Source Leakage Current
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
—
—
±
100
—
V
GS
=
±
12V , V
DS
=0V
nA
7.8
—
V
DS
=-4
V
,
I
D
=-4.1A,V
GS
=-4.5V
nC
Q
gs
Q
gd
T
d(on)
T
r
—
1.2
1.6
12
—
—
—
—
—
—
35
—
V
DD
=-4
V
,
I
D
=-3.3A , R
L
=-
1.2Ω,V
GEN
=-4.5
V
,
R
g
=1Ω
ns
30
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
—
10
7
38
280
190
—
1500
—
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
V
DS
=-4
V
,
V
GS
=0
V
,
F=1.0MHz
pF
—
—
—
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
Unit
A
V
G
=V
D
=0V , Force Current
–
4
.1
I
S
Continuous Source Current
Diode Forward Voltage
V
SD
—
—
-1.
2
V
V
GS
=0V , I
S
=-1
.6
A , T
J
=25
℃
Notes:
1.
Repetitive Rating: Pulse width limited by maximum junction temperature.
2.
Surface Mounted on FR4 Board, t
≤
10 sec.
3.
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
4.
Guaranteed by design, not subject to production
Dec.2014
Page
2
WST2337A
P-Ch MOSFET
Typical Characteristics
Figure 1:Switching Test Circuit
Figure 2:Switching Waveforms
T
J
-Junction
T
e
mperature(
℃
)
T
J
-Junction
T
e
mperature(
℃
)
Figure 3 Power Dissipation
Figure 4 Drain Current
.
Vds Drain-Source Voltage (V)
I
D
– Drain Current (A)
Figure 5 Output Characteristics
Figure 6 Drain-Source On-Resistance
Dec.2014
Page
3
WST2337A
P-Ch MOSFET
Vgs Gate-Source Voltage (V)
T
J
-Junction
T
e
mperature(
℃
)
Figure 7 Transfer Characteristics
Figure 8 Drain-Source On-Resistance
Vgs Gate-Source Voltage (V)
Vds Drain-Source Voltage (V)
Figure 9 Rdson vs Vgs
Figure 10 Capacitance vs Vds
Qg Gate Charge (nC)
Vsd Source-Drain Voltage (V)
Figure 11 Gate Charge
Figure 12 Source- Drain Diode Forward
Dec.2014
Page
4
WST2337A
P-Ch MOSFET
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
Dec.2014
Page
5
Attention
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applications
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
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systems,
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aircraft’s
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control
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systems,
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or
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whose
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failure
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can
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reasonably
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to
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result
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in
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serious
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physical
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and/or
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damage.
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Consult
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with
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representative
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o
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test
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power
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Semiconductor
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probabilistic
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due
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When
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Specification”
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as
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of
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Sep.2014. Specifications
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information
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are
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subject
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to
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change
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notice.
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