Winsok-Semicon-WST3078
| Part # | Winsok-Semicon-WST3078 |
Download  | Winsok-Semicon-WST3078 |
WS
T3078
N&P-Ch MOSFET
General Description
Product Summery
The WST3078 is the highest performance trench
N-ch and P-ch MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
BVDSS
30V
RDSON
ID
32
mΩ
78
mΩ
3.5A
-3A
–
3
0V
The WST3078 meet the RoHS and Green
Product requirement with full function reliability
approved.
Applications
z
High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
SOT-23-6L Pin Configuration
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
N-Channel P-Channel
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
30
±
20
3.5
-30
±
20
-3
V
V
A
I
D
@T
c
=25
℃
I
D
@T
c
=70
℃
I
DM
-2.4
-12
1.4
A
3.0
19
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1.4
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θJA
Parameter
Typ.
—
Max.
125
9
0
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θJC
—
Dec.2014
Page 1
WS
T
3
078
N&P-Ch MOSFET
N-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
3
0
—
Typ.
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
—
0.02
5
3
2
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=
10
V , I
D
=
2.7
A
—
V/
℃
50
—
Static Drain-Source On-Resistance
2
m
Ω
R
DS(ON)
68
56
V
GS
=
4
.5V , I
D
=
2
A
—
2.5
—
1
V
GS(th)
Gate Threshold Voltage
1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.6
-2.5
4
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=
24
V , V
GS
=0V , T
J
=25
℃
V
DS
=
24
V , V
GS
=0V , T
J
=
85
℃
I
DSS
Drain-Source Leakage Current
uA
—
30
±
10
—
—
—
—
—
8
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
u
A
S
V
GS
=
±
20
V , V
DS
=0V
1
1
V
DS
=5V , I
D
=
2
A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.
3
3
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
V
DS
=1
5
V , V
GS
=
10
V , I
D
=
2
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
1.1
1.5
5.3
11
V
DD
=10V , V
G
EN
=4.5V ,
16
17
4
R
G
=
6
Ω
I
D
=
2
A
R
L
=10Ω
12
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
2.6
2
1
5
37
C
iss
C
oss
C
rss
Input Capacitance
—
—
—
V
DS
=1
5
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
28
Drain-Source Body Diode Characteristics
Symbol
I
S
Parameter
Continuous Source-Drain Diode Current
1,4
Pulsed Diode Forward Current
2,4
Body Diode Voltage
2
Conditions
Min.
—
Typ.
—
Max.
1.0
5
Unit
A
V
G
=V
D
=0V , Force Current
I
SM
—
—
A
V
SD
t
rr
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
1.
1
—
V
0.75
9.2
Reverse Recovery Time
—
nS
nC
I
F
=
5
A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
Reverse Recovery Charge
—
4.3
—
Note :
1.The data tested by
Surface Mounted on 1in2 pad area.
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WS
T3078
N&P-Ch MOSFET
P-Channel Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=-250uA
Min.
-30
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=-1mA
V
GS
=-
10
V , I
D
=-
2
A
-0.013
78
—
V/
℃
—
100
170
Static Drain-Source On-Resistance
2
m
Ω
R
DS(ON)
120
V
GS
=-
4
.5V , I
D
=-
1.
5
A
—
–
1.6
2.3
—
V
GS(th)
Gate Threshold Voltage
-1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
-2.5
—
V
V
GS
=V
DS
, I
D
=-250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
–
1
V
DS
=-24V , V
GS
=0V , T
J
=25
℃
V
DS
=-24V , V
GS
=0V , T
J
=85
℃
I
DSS
Drain-Source Leakage Current
uA
—
-30
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Total Gate Charge (-4.5V)
Gate-Source Charge
Gate-Drain Charge
—
uA
S
V
GS
=
±
20V , V
DS
=0V
±
10
—
—
—
—
8
V
DS
=-5V , I
D
=-
2
A
3.8
3.3
1.1
1.
1
5.3
9.3
15.4
3
.6
229
42
Q
g
V
DS
=-15V , V
GS
=-10V , I
D
=-
2
A
nC
Q
gs
Q
gd
T
d(on)
T
r
Turn-On Delay Time
Rise Time
V
DD
=-15V , V
GEN
=-10V ,
—
—
—
—
—
—
ns
R
G
=6
Ω
I
D
=-1A ,R
L
=15Ω.
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=-15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
33
Drain-Source Body Diode Characteristics
Symbol
I
S
Parameter
Continuous Source-Drain Diode Current
1,4
Pulsed Diode Forward Current
2,4
Body Diode Voltage
2
Conditions
Min.
—
Typ.
—
Max.
-3.
2
–
1
5
-1.1
—
Unit
A
V
G
=V
D
=0V , Force Current
I
SM
—
—
A
V
SD
t
rr
V
GS
=0V , I
S
=-1A , T
J
=25
℃
—
V
0.75
19
Reverse Recovery Time
—
nS
nC
I
F
=-
2
A
,
dI/dt=100A/µs , T
J
=25
℃
Q
rr
Reverse Recovery Charge
—
14
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
3
WS
T3078
N&P-Ch MOSFET
N-Channel Typical Characteristics
Drain Current
Power Dissipation
6
5
4
3
2
1
0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
T
A
=25
o
C,V
G
=10V
T
A
=25
o
C
0.0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
emperature (
°
C)
T
j
– Junction
T
e
mperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
2
50
Duty =
0.5
1
10
1
0.2
0.1
0.05
300
m
s
0.02
1ms
0.1
0.01
10ms
0.1
100ms
DC
Single Pulse
Mounted on 1in
2
pad
q
JA
: 90
o
C/W
T
A
=25
o
C
R
0.01
0.01
0.01
0.1
1
10
100 300
1E-4 1E-3 0.01
0.1
1
10
100
V
DS
– Drain – Source Voltage (V)
Square Wave Puls
e
D
uration (sec)
Dec.2014
Page
4
WS
T3078
N&P-Ch MOSFET
Output Characteristics
Drain-Source On Resistance
16
14
12
10
8
80
70
60
50
40
30
20
10
V
GS
=5,6,7,8,9,10V
4.5V
V
GS
=4.5V
V
GS
=10V
4V
6
3.5V
4
2
3V
2.5V
0
0.0
0
1
3
3
4
5
6
0.5
1.0
1.5
2.0
2.5
3.0
V
DS
–
D
rain-Source Voltage (V)
I
D
–
D
rain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
150
120
90
60
30
0
1.4
1.2
1.0
0.8
0.6
0.4
I
DS
=250
m
A
I
DS
=
2.7
A
-50 -25
0
25 50 75
100 125 150
2
3
4
5
6
7
8
9
10
V
GS
– Gate – Source Voltage (V)
T
j
– Junction
T
emperature (
°
C)
Dec.2014
Page
5
WS
T3078
N&P-Ch MOSFET
Source-Drain Diode Forward
Drain-Source On Resistance
20
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
GS
=10V
I
DS
=
2.7
A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 32m
W
0.1
0.0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
emperature (
°
C)
V
SD
– Source – Drain Voltage (V)
Gate Charge
Capacitance
10
9
8
7
6
5
4
3
2
1
0
350
300
250
200
150
100
50
Frequency=1MHz
V
DS
=15V
I
DS
=
2
A
Ciss
Coss
Crss
0
0
1
2
3
4
5
6
0
5
10
15
20
25
30
Q
G
–
G
ate Charge (nC)
V
DS
– Drain – Source Voltage (V)
Dec.2014
Page
6
WS
T3078
N&P-Ch MOSFET
P-Channel Typical Characteristics
Drain Current
Power Dissipation
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
T
A
=25
o
C,V
G
=-10V
T
A
=25
o
C
0.0
0
20 40 60 80
100 120 140 160
0
20 40 60 80
100 120 140 160
T
j
– Junction
T
emperature (
°
C)
T
j
– Junction
T
e
mperature (
°
C)
Safe Operation Area
Thermal Transient Impedance
2
1
50
10
Duty =
0.5
0.2
0.1
0.05
300
m
s
0.1
0.01
1E-3
0.02
0.01
1
0.1
1ms
10ms
Single Pulse
100ms
DC
Mounted on 1in
2
pad
: 90
o
C/W
T
A
=25
o
C
R
0.01
1E-4 1E-3 0.01
0.1
1
10
100
0.01
0.1
1
10
100 300
-V
DS
– Drain – Source Voltage (V)
Square Wave Puls
e
D
uration (sec)
Dec.2014
Page
7
WS
T3078
N&P-Ch MOSFET
Drain-Source On Resistance
Output Characteristics
210
180
150
120
90
12
10
8
V
GS
=-5,-6,-7,-8,-9,-10V
-4.5V
V
GS
=-4.5V
-4V
6
V
GS
=-10V
4
-3.5V
60
2
-3V
3
30
0
0
1
2
4
5
0
2
2
3
4
5
6
-I
D
–
D
rain Current (A)
-V
DS
– Drain – Source Voltage (V)
Gate-Source On Resistance
Gate Threshold Voltage
280
240
200
160
120
80
1.4
1.2
1.0
0.8
0.6
0.4
I
DS
=-
2
A
I
DS
=-250
m
A
40
2
3
4
5
6
7
8
9
10
-50 -25
0
25 50 75
100 125 150
T
j
– Junction
T
e
mperature (
°
C)
-V
GS
– Gate – Source Voltage (V)
Dec.2014
Page
8
WS
T3078
N&P-Ch MOSFET
Drain-Source On Resistance
Source-Drain Diode Forward
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
20
10
V
GS
=-10V
I
DS
=-
2
A
T
j
=150
o
C
T
j
=25
o
C
1
R
ON
@T
j
=25
o
C: 82m
W
0.1
-50 -25
0
25 50 75
100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
j
– Junction
T
emperature (
°
C)
-V
SD
– Source – Drain Voltage (V)
Capacitance
Gate Charge
400
350
300
250
200
150
100
50
10
Frequency=1MHz
V
DS
=-15V
9
8
7
6
5
4
3
2
1
0
I
DS
=-
2
A
Ciss
Coss
Crss
0
0
5
10
15
20
25
30
0
1
2
3
4
5
6
7
Q
G
–
G
ate Charge (nC)
-V
DS
– Drain – Source Voltage (V)
Dec.2014
Page
9
WS
T3078
N&P-Ch MOSFET
Package Information
SOT-23-6
D
e
SEE
VIEW A
b
c
e1
GAUGE PLANE
SEATING PLANE
L
VIEW A
SOT-23-6
RECOMMENDED LAND PATTERN
S
Y
M
B
O
L
MILLIMETERS
INCHES
0.63
MIN.
–
MAX.
MIN.
–
MAX.
0.049
0.002
0.047
0.020
0.009
A
1.25
0.05
1.20
0.50
0.22
0.000
0.035
0.012
0.003
A1
A2
b
0.00
0.90
0.30
0.08
c
2.4
D
3.10
3.00
1.80
0.106
0.102
0.055
0.122
0.118
0.071
2.70
2.60
1.40
E
E1
e
0.8
0.95 BSC
1.90 BSC
0.037 BSC
0.075 BSC
e1
L
0.012
0.024
0.30
0.60
0.95
°
°
8
0
°
8
0
°
0
UNIT: mm
Note : 1. Follow JEDEC TO-178 AB.
2. Dimension D and E1 do not include mold flash, protrusions or
gate burrs. Mold flash, protrusion or gate burrs shall not exceed
10 mil per side.
Dec.2014
Page
10
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
ꢀ
not
ꢀ
have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
ꢀ
using
ꢀ
any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
ꢀ
power
ꢀ
assumes
ꢀ
no
ꢀ
responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
ꢀ
that
ꢀ
result
ꢀ
from
ꢀ
using
ꢀ
products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
ꢀ
products
ꢀ
specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
ꢀ
3,
ꢀ
Specifications
ꢀ
of
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
stipulate
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
ꢀ
the
ꢀ
described
ꢀ
products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
ꢀ
these
ꢀ
probabilistic
ꢀ
failures
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
that
ꢀ
could
ꢀ
endanger
ꢀ
human
ꢀ
lives
ꢀ
that
ꢀ
could
ꢀ
give
ꢀ
rise
ꢀ
to
ꢀ
smoke
ꢀ
or
ꢀ
fire,
ꢀ
or
ꢀ
that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
ꢀ
error
ꢀ
prevention
ꢀ
circuits
ꢀ
for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
ꢀ
the
ꢀ
event
ꢀ
that
ꢀ
any
ꢀ
or
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products(including
ꢀ
technical
ꢀ
data,
ꢀ
services)
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
controlled
ꢀ
under
ꢀ
any
ꢀ
of
ꢀ
applicable
ꢀ
local
ꢀ
export
ꢀ
control
ꢀ
laws
ꢀ
and
ꢀ
regulations,
ꢀ
such
ꢀ
products
ꢀ
must
ꢀ
not
ꢀ
be
ꢀ
exported
ꢀ
without
ꢀ
obtaining
ꢀ
the
ꢀ
export
ꢀ
license
ꢀ
from
ꢀ
the
ꢀ
authorities
ꢀ
concerned
ꢀ
in
ꢀ
accordance
ꢀ
with
ꢀ
the
ꢀ
above
ꢀ
law.
ꢀ
6,
ꢀ
No
ꢀ
part
ꢀ
of
ꢀ
this
ꢀ
publication
ꢀ
may
ꢀ
be
ꢀ
reproduced
ꢀ
or
ꢀ
transmitted
ꢀ
in
ꢀ
any
ꢀ
form
ꢀ
or
ꢀ
by
ꢀ
any
ꢀ
means,
ꢀ
electronic
ꢀ
or
ꢀ
mechanical,
ꢀ
including
ꢀ
photocopying
ꢀ
and
ꢀ
recording,
ꢀ
or
ꢀ
any
ꢀ
information
ꢀ
storage
ꢀ
or
ꢀ
retrieval
ꢀ
system,
ꢀ
or
ꢀ
otherwise,
ꢀ
without
ꢀ
the
ꢀ
prior
ꢀ
written
ꢀ
permission
ꢀ
of
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
ꢀ
it
ꢀ
is
ꢀ
not
ꢀ
guaranteed
ꢀ
for
ꢀ
volume
ꢀ
production. Winsok
ꢀ
power
ꢀ
believes
ꢀ
information
ꢀ
herein
ꢀ
is
ꢀ
accurate
ꢀ
and
ꢀ
reliable,
ꢀ
but
ꢀ
no
ꢀ
guarantees
ꢀ
are
ꢀ
made
ꢀ
or
ꢀ
implied
ꢀ
regarding
ꢀ
its
ꢀ
use
ꢀ
or
ꢀ
any
ꢀ
infringements
ꢀ
of
ꢀ
intellectual
ꢀ
property
ꢀ
rights
ꢀ
or
ꢀ
other
ꢀ
rights
ꢀ
of
ꢀ
third
ꢀ
parties.
ꢀ
8,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
information
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
ꢀ
to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
