Winsok-Semicon-WST3392
| Part # | Winsok-Semicon-WST3392 |
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WST3392
Dual N-Ch MOSFET
General Description
Product Summery
The
WST3392
is the highest performance
trench N-ch
MOSFETs with extreme high cell
density ,
which provide excellent RDSON
and gate charge
for most of the small power
switching and load
switch applications.
BVDSS
RDSON
40
m
Ω
ID
3.7
A
3
0V
Applications
The
WST3392
meet the RoHS and Green
Product requirement with full function reliability
approved.
z
Power management in portable and battery
operated products
z
One cell battery pack protection
Features
SOT-23-6L
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
D1
D2
z
Excellent Cdv/dt effect decline
z
Green Device Available
Top View
G
1
1
6
D
1
S2
S1
2
5
4
3
G1
G2
G2
D
2
S1
S2
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
Units
V
Drain-Source Voltage
3
0
±
20
V
GS
Gate-Sou
r
ce Voltage
V
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
3.7
3.0
A
I
D
@T
C
=25
℃
I
D
@T
C
=70
℃
I
DM
A
20
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1.15
W
℃
℃
Storage
T
e
mperature Range
-55 to 150
-55 to 150
T
J
Operating Junction Temperature Range
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
1
1
0
R
θ
JC
—
8
0
Dec.2014
Page 1
WST3392
Dual N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
3
0
—
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=
10
V , I
D
=
3.5
A
V
GS
=
6
V , I
D
=
2
A
0.028
40
—
V/
℃
50
Static Drain-Source On-Resistance
2
45
65
R
DS(ON)
m
Ω
58
73
2.0
—
V
GS
=
4.5
V , I
D
=
2
A
V
GS(th)
Gate Threshold Voltage
1.5
-3.21
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
1
V
DS
=
30
V , V
GS
=0V , T
J
=25
℃
V
DS
=
30
V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
GS
=
±
20
V , V
DS
=0V
12
V
DS
=5V , I
D
=5A
4
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
6
Ω
5
4.05
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
0.55
1.0
V
DS
=1
5
V , V
GS
=
10
V , I
D
=
3.5
A
0.8
1.8
—
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
4.5
1.5
V
DD
=1
5
V , V
G
EN
=
10
V , R
G
=
3
Ω
I
D
=
1.0
A
,R
L
=
4.2
Ω.
—
18.5
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
15.5
—
210
45
30
C
iss
C
oss
C
rss
Input Capacitance
170
35
V
DS
=1
5
V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
23
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
1.
5
3.5
1.
0
—
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
—
—
V
V
GS
=0V , I
S
D
=
3.5
A , T
J
=25
℃
—
7.5
2.5
nS
nC
I
F
=
3.5
A
,
dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WST3392
Dual N-Ch MOSFET
Typical Characteristics
15
10
8
V
DS
=5V
10V
4.5V
4V
7V
12
9
6
3.5V
125
°
C
6
4
25
°
C
3
V
GS
=3V
2
0
0
0
1
2
V
DS
(Volts)
3
4
5
0.5
1
1.5
2
2.5
3
3.5
4
4.5
V
GS
(Volts)
Fig 1: On-Region Characteristics (Note E)
Figure 2: Transfer Characteristics (Note E)
70
1.8
1.6
1.4
1.2
1
V
GS
=10V
I
D
=3.5A
60
50
40
30
V
GS
=4.5V
V
GS
=4.5V
I
D
=2A
V
GS
=10V
0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
I
D
(A)
Temperature (
°
C
)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage (Note E)
Figure 4: On-Resistance vs. Junction Te
m
1
p
8
erature
(Note E)
120
100
80
1.0E+02
1.0E+01
I
D
=3.5A
40
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
125
°
C
125
°
C
60
25
°
C
25
°
C
40
20
2
4
6
8
10
0.0
0.2
0.4
0.6
V
SD
(Volts)
0.8
1.0
1.2
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Figure 6: Body-Diode Characteristics (Note E)
Dec.2014
Page
3
WST3392
Dual N-Ch MOSFET
Typical Characteristics
300
250
200
150
100
50
10
V
DS
=15V
I
D
=3.5A
8
C
iss
6
4
2
0
C
oss
C
rss
0
0
5
10
15
V
DS
(Volts)
20
25
30
0
1
2
3
4
5
Q
g
(nC)
Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics
100.0
10.0
1.0
1000
100
10
T
A
=25
°
C
10
µ
s
R
DS(ON)
limited
1ms
10ms
10s
0.1
T
J(Max)
=150
°
C
DC
T
A
=25
°
C
1
0.00001
0.001
0.1
10
1000
0.0
0.01
0.1
1
10
100
V
DS
(Volts)
Pulse Width (s)
Figure 10: Single Pulse Power Rating
Junction-to-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=150
°
C
/W
0.1
P
D
0.01
Single Pulse
0.001
T
on
T
0.001
0.00001
0.0001
0.01
0.1
Pulse Width (s)
1
10
100
1000
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Dec.2014
Page
4
Attention
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1,
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Any
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and
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all
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described
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herein
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that
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can
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handle
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applications
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
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or
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other
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applications
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whose
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failure
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can
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be
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reasonably
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expected
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to
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result
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in
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serious
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physical
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and/or
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material
ꢀ
damage.
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Consult
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with
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your
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representative
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nearest
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you
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before
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using
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products
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described
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contained
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herein
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in
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such
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assumes
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responsibility
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for
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failures
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result
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at
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values
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even
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momentarily,
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rated
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values
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(such
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maximum
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ratings,
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operating
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condition
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ranges,
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or
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other
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listed
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in
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of
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Specifications
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of
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any
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stipulate
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the
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performance,
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characteristics,
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and
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functions
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the
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described
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in
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the
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independent
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state,
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are
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of
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as
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mounted
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in
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the
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customer’s
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products
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equipment.
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T
o
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verify
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symptoms
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and
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states
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that
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cannot
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evaluated
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in
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always
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evaluate
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test
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devices
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mounted
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in
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the
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customer’s
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or
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equipment.
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Winsok
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power
ꢀ
Semiconductor
ꢀ
CO.,
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LTD.
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strives
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to
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supply
ꢀ
high
Ͳ
quality
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high
Ͳ
reliability
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all
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semiconductor
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fail
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with
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It
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is
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possible
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these
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probabilistic
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could
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human
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lives
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to
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could
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cause
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damage
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to
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other
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property.
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When
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designing
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equipment,
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adopt
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safety
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measures
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so
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that
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these
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kinds
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of
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accidents
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events
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Such
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include
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but
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limited
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to
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protective
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circuits
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and
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error
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prevention
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circuits
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for
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safe
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design,
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redundant
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design,
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and
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structural
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design.
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parameters)
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due
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to
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product/technology
ꢀ
improvement,etc.
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When
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designing
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equipment,
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refer
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to
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the
ꢀ
“Delivery
ꢀ
Specification”
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for
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the
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Winsok
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power
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product
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you
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Intend
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to
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use.
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9,
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this
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catalog
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provides
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information
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as
ꢀ
of
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Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
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notice.
ꢀ
