Winsok-Semicon-WST3400
| Part # | Winsok-Semicon-WST3400 |
Download  | Winsok-Semicon-WST3400 |
WS
T3400
N-Ch MOSFET
Product Summery
General Description
The WST3400 is the highest performance trench
N-Ch MOSFET
with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDSON
ID
30V
18
m
Ω
7
A
Applications
The WST3400 meet the RoHS and Green
Product requirement
with full function reliability
approved.
z
High Frequency Point-of-Load Synchronous s
Small power switching for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOT
–
23
-3L
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Rating
Symbol
Parameter
Units
10s
Steady State
30
V
DS
V
GS
Drain-Source Voltage
Gate-Sou
r
ce Voltage
V
V
±
12
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
8
.5
6
.
9
A
I
D
@T
c
=25
℃
I
D
@T
c
=70
℃
I
DM
7.0
6
.
0
A
25
A
P
D
@T
A
=25
℃
P
D
@T
A
=70
℃
T
STG
Total Power Dissipation
3
Total Power Dissipation
3
1.32
0.84
1
W
W
℃
℃
0.64
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Ambient
1
(t
≤
10s)
Thermal Resistance Junction-Case
1
125
95
R
θ
JA
—
R
θ
JC
—
80
Dec.2014
Page 1
WS
T3400
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
BV
DSS
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
30
—
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=
4.5
V , I
D
=5A
0.025
18
—
V/
℃
28
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
V
GS
=
2
.5V , I
D
=4A
24
3
8
V
GS(th)
Gate Threshold Voltage
0.8
-4.8
—
1.2
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=24V , V
GS
=0V , T
J
=25
℃
V
DS
=24V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
GS
=
±
12
V , V
DS
=0V
V
DS
=5V , I
D
=5A
7
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.5
6
5
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
8.4
3.5
2.9
4.8
14
V
DS
=15V , V
GS
=4.5V , I
D
=5A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
2.5
2.1
2.4
7.8
22
V
DD
=15V , V
GS
=
10
V , R
G
=3.3
Ω
I
D
=5A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
44
4
8
C
iss
C
oss
C
rss
Input Capacitance
572
81
800
112
91
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
65
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
2
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
25
1.2
—
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
V
—
19
nS
nC
I
F
=5A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
1.04
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WS
T3400
N-Ch MOSFET
Typical Characteristics
39
36
33
30
27
24
21
I
D
=5A
2
4
6
8
10
V
GS
(V)
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
6
4
2
0
T =150
T =25
℃
J
℃
J
0
0.3
0.6
0.9
V
SD
, Source-to-Drain Voltage (V)
Fig.4 Gate-Charge Characteristics
Fig.3 Forward Characteristics Of Reverse
1.8
1.8
1.4
1.0
0.6
0.2
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
J
)
T ,
Junction Temperature (
J
)
℃
℃
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Dec.2014
Page
3
WS
T3400
N-Ch MOSFET
1000
100
10
F=1.0MHz
Ciss
Coss
Crss
1
5
9
13
17
21
25
V
DS
Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
Jpeak
= T
C
+
P
DM
x R
θ
JC
T
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Dec.2014
Page
4
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Sep.2014. Specifications
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