Winsok-Semicon-WST3414
| Part # | Winsok-Semicon-WST3414 |
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WS
T
3414
N-Ch MOSFET
Product Summery
General Description
The WST3414 is the highest performance trench
N-ch MOSFETs with extreme high cell density ,
which provide excellent RDSON and gate charge
for most of the small power switching and load
switch applications.
BVDSS
RDSON
ID
20V
24
m
Ω
6.0
A
Applications
The WST3414 meet the RoHS and Green
Product requirement
with full function reliability
approved.
z
High Frequency Point-of-Load Synchronous
Small power switching for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOT
–
23
-3L
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent Cdv/dt effect decline
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
20
Units
V
Drain-Source Voltage
Gate-Sou
r
ce Voltage
Continuous Drain Current, V
GS
@ 4.5V
1
Continuous Drain Current, V
GS
@ 4.5V
1
Pulsed Drain Current
2
V
GS
±
12
6.
0
V
A
I
D
@T
c
=25
℃
I
D
@T
c
=70
℃
I
DM
4.8
A
2
0
A
P
D
@T
A
=25
℃
T
STG
Total Power Dissipation
3
1
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
125
80
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
R
θ
JC
—
Dec.2014
Page 1
WS
T
3414
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
20
—
—
—
0.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=4.5V , I
D
=4A
0.018
24
—
V/
℃
30
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
3
8
V
GS
=2.5V , I
D
=3A
30
0.7
-3.1
—
V
GS(th)
Gate Threshold Voltage
1.
0
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
V
DS
=16V , V
GS
=0V , T
J
=25
℃
V
DS
=16V , V
GS
=0V , T
J
=55
℃
1
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
12V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=4A
20
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
1.5
8.6
1.37
2.3
5.2
34
3
Ω
Q
g
Total Gate Charge (4.5V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
12.0
1.9
3.2
10.4
61
V
DS
=15V , V
GS
=4.5V , I
D
=4A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
V
DS
=10V , V
GS
=4.5V , R
G
=3.3
Ω
I
D
=4A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
23
46
9.2
635
70
18.4
889
98
C
iss
C
oss
C
rss
Input Capacitance
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
63
88
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
5.0
2
0
Unit
A
I
S
I
SM
V
SD
t
rr
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
V
G
=V
D
=0V , Force Current
—
—
A
V
GS
=0V , I
S
=1A , T
J
=25
℃
—
—
1.2
—
V
—
7.5
2.1
nS
nC
I
F
=4A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec
.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WS
T
3414
N-Ch MOSFET
Typical Characteristics
45
40
35
30
25
20
18
V
GS
=5V
V
GS
=4.5V
I
D
=4A
16
14
12
10
8
V
GS
=3V
V
GS
=2.5V
V
GS
=1.8V
6
4
2
0
1
3
5
7
9
11
0
0.5
1
1.5
2
V
GS
(V)
V
DS
, Drain-to-Source Voltage (V)
Fig.2 On-Resistance vs. Gate-Source
Fig.1 Typical Output Characteristics
6
4
T =175
T =25
℃
J
℃
J
2
0
0
0.3
0.6
0.9
1.2
V
SD
, Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics Of Reverse
Fig.4 Gate-Charge Characteristics
1.8
1.4
1.0
0.6
0.2
1.8
1.4
1
0.6
0.2
-50
0
50
100
150
-50
0
50
100
150
T ,Junction
Temperature (
)
T ,
Junction Temperature (
J
)
℃
℃
J
Fig.5 Normalized V
GS(th)
vs. T
J
Fig.6 Normalized R
DSON
vs. T
J
Dec.2014
Page
3
WS
T
3414
N-Ch MOSFET
1000
100
10
100.00
10.00
1.00
Ciss
100us
10ms
Coss
Crss
100ms
1s
0.10
DC
T =25
℃
A
F=1.0MHz
Single Pulse
0.01
1
4
7
10
13
16
19
22
0.1
1
10
100
V
DS
(V)
V
D
S
Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P
DM
T
ON
0.001 SINGLE
PULSE
T
D = T
ON
/T
T
Jpeak
= T
A
+
P
DM
x R
θ
JA
0.0001
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
Fig.10 Switching Time Waveform
Fig.11 Gate Charge Waveform
Dec.2014
Page
4
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Sep.2014. Specifications
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