Winsok-Semicon-WST6004
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WST6004
N-Ch MOSFET
General Description
Product Summery
The WST6004 is the highest performance
trench
N-Ch MOSFET with extreme high cell
density ,
which provide excellent RDSON and gate
charge for most of the small power switching and
load switch applications.
BVDSS
RDSON
ID
140mΩ
20V
0.6A
Applications
The WST6004 meet the RoHS and Green
Product requirement with full function
reliability approved.
Replace Digital Transistor
Power Supply Converter Circuits
Load/Power Switching Cell Phones, Pagers
Features
SOT
–
523
Pin Configuration
High-speed switching
Green Device Available
D
3
1
2
G
S
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
20
Units
Drain-Source Voltage
V
V
V
GS
Gate-Sou
r
ce Voltage
±
8
I
D
@T
A
=25
℃
I
D
@T
A
=70
℃
I
DM
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
600
300
3
mA
mA
A
Total Power Dissipation
3
W
0.175
P
D
@T
A
=25
℃
T
STG
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
℃
℃
T
J
Thermal Data
Symbol
Parameter
Typ.
Max.
Unit
R
θJA
Thermal Resistance Junction-Ambient
1
—
625
℃
/W
Dec.2014
Page 1
WST6004
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
20
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BV
DSS
Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=4.5V , I
D
=0.6A
—
0.05
—
V/
℃
450
765
—
140
180
R
DS(ON)
Static Drain-Source On-Resistance
2
mΩ
V
GS
=2.5V , I
D
=0.5A
—
0.35
V
GS(th)
Gate Threshold Voltage
—
-3.7
—
1.0
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
—
—
—
—
—
—
—
—
—
—
—
—
mV/
℃
1
V
DS
=16V , V
GS
=0V , T
J
=25
℃
V
DS
=16V , V
GS
=0V , T
J
=55
℃
I
DSS
Drain-Source Leakage Current
uA
—
5
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Turn-On Delay Time
Rise Time
—
±
10
—
uA
V
GS
=
±
8V , V
DS
=0V
V
DS
=5V , I
D
=0.1A
880
6
mS
—
T
d(on)
T
r
3.8
28
—
V
DD
=15V , V
GS
=10V ,
ns
R
G
=3.3
Ω
, I
D
=0.1A
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
—
18
C
iss
C
oss
C
rss
Input Capacitance
130
20
220
36
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
16
28
Diode Characteristics
Symbol
Parameter
Conditions
Min.
—
Typ.
—
Max.
100
0.5
1
Unit
mA
A
I
S
Continuous Source Current
1,4
Pulsed Source Current
2,4
Diode Forward Voltage
2
V
G
=V
D
=0V , Force Current
I
SM
V
SD
—
—
—
—
V
V
GS
=0V , I
S
=0.2A , T
J
=25
℃
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The power dissipation is limited by 150
℃
junction temperature.
4.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Dec.2014
Page
2
WST6004
N-Ch MOSFET
Typical Performance Characteri
s
tics
Output Characteristics
Transfer Characteristics
5.0
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
V
GS
=4V,5V
V
DS
=3V
Pulsed
T
a
=25
℃
4.5
V
GS
=3V
Pulsed
4.0
V
GS
=2.5V
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
a
=25
℃
T
a
=100
℃
V
GS
=2V
V
GS
=1.5V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
R
DS(ON)
V
GS
——
R
DS(ON)
I
D
——
500
800
700
600
500
400
300
200
100
Pulsed
T
a
=25
℃
Pulsed
450
400
350
300
250
200
V
GS
=1.8V
I
D
=0.65A
T
a
=100
℃
V
GS
=2.5V
V
GS
=4.5V
T
a
=25
℃
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1
2
3
4
5
DRAIN CURRENT
I
D
(A)
GATE TO SOURCE VOLTAGE
(V)
GS
Threshold Voltage
I
S
——
V
SD
2
1
0.8
Pulsed
0.7
0.6
0.5
0.4
0.3
0.2
I
D
=250uA
0.1
T
a
=100
℃
T
a
=25
℃
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
(V)
JUNCTION TEMPERATURE
T
j
(
℃
)
SD
Dec.2014
Page
3
WST6004
N-Ch MOSFET
ꢀꢁꢂꢃꢄꢅꢆꢇꢈꢉꢊꢋꢉꢌꢍꢇꢁꢎꢏꢐꢑꢒꢍꢇꢓꢑꢔꢍꢒꢕꢑꢖꢒꢕꢇ
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min.
0.700
0.000
0.700
0.150
0.250
0.100
1.500
0.700
1.450
Max.
0.900
0.100
0.800
0.250
0.350
0.200
1.700
0.900
1.750
Min.
0.028
0.000
0.028
0.006
0.010
0.004
0.059
0.028
0.057
Max.
0.035
0.004
0.031
0.010
0.014
0.008
0.067
0.035
0.069
A
A1
A2
b1
b2
c
D
E
E1
e
e1
L
0.500 T
Y
P
.
0.400 REF.
0.020 T
Y
P
.
0.016 REF.
0.900
1.100
0.035
0.043
L1
Κ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
ꢀꢁꢂꢃꢄꢅꢆ ꢀꢎꢌꢌꢍꢕꢏꢍꢗꢇꢈꢉꢗꢇꢘꢉꢙꢖ
ꢎ
ꢀ
ꢏ
Dec.2014
Page
4
Attention
ꢀ
1,
ꢀ
Any
ꢀ
and
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
do
ꢀ
not
ꢀ
have
ꢀ
specifications
ꢀ
that
ꢀ
can
ꢀ
handle
ꢀ
applications
ꢀ
that
ꢀ
require
ꢀ
extremely
ꢀ
high
ꢀ
levels
ꢀ
of
ꢀ
reliability,
ꢀ
such
ꢀ
as
ꢀ
life
Ͳ
support
ꢀ
systems,
ꢀ
aircraft’s
ꢀ
control
ꢀ
systems,
ꢀ
or
ꢀ
other
ꢀ
applications
ꢀ
whose
ꢀ
failure
ꢀ
can
ꢀ
be
ꢀ
reasonably
ꢀ
expected
ꢀ
to
ꢀ
result
ꢀ
in
ꢀ
serious
ꢀ
physical
ꢀ
and/or
ꢀ
material
ꢀ
damage.
ꢀ ꢀ
Consult
ꢀ
with
ꢀ
your
ꢀ
Winsok
ꢀ
power
ꢀ
representative
ꢀ
nearest
ꢀ
you
ꢀ
before
ꢀ
using
ꢀ
any
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein
ꢀ
in
ꢀ
such
ꢀ
applications.
ꢀ
2,Winsok
ꢀ
power
ꢀ
assumes
ꢀ
no
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responsibility
ꢀ
for
ꢀ
equipment
ꢀ
failures
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that
ꢀ
result
ꢀ
from
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using
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products
ꢀ
at
ꢀ
values
ꢀ
that
ꢀ
exceed,
ꢀ ꢀ
even
ꢀ
momentarily,
ꢀ
rated
ꢀ
values
ꢀ
(such
ꢀ
as
ꢀ
maximum
ꢀ
ratings,
ꢀ
operating
ꢀ
condition
ꢀ
ranges,
ꢀ
or
ꢀ
other
ꢀ
parameters)
ꢀ
listed
ꢀ
in
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products
ꢀ
specifications
ꢀ
of
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any
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and
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all
ꢀ
Winsok
ꢀ
power
ꢀ
products
ꢀ
described
ꢀ
or
ꢀ
contained
ꢀ
herein.
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3,
ꢀ
Specifications
ꢀ
of
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any
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and
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all
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Winsok
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power
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products
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described
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or
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contained
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herein
ꢀ
stipulate
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the
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performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
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the
ꢀ
described
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products
ꢀ
in
ꢀ
the
ꢀ
independent
ꢀ
state,
ꢀ
and
ꢀ
are
ꢀ
not
ꢀ
guarantees
ꢀ
of
ꢀ
the
ꢀ
performance,
ꢀ
characteristics,
ꢀ
and
ꢀ
functions
ꢀ
of
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the
ꢀ
described
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products
ꢀ
as
ꢀ
mounted
ꢀ
in
ꢀ
the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
T
o
ꢀ
verify
ꢀ
symptoms
ꢀ
and
ꢀ
states
ꢀ
that
ꢀ
cannot
ꢀ
be
ꢀ
evaluated
ꢀ
in
ꢀ
an
ꢀ
independent
ꢀ
device,
ꢀ
the
ꢀ
customer
ꢀ
should
ꢀ
always
ꢀ
evaluate
ꢀ
and
ꢀ
test
ꢀ
devices
ꢀ
mounted
ꢀ
in
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the
ꢀ
customer’s
ꢀ
products
ꢀ
or
ꢀ
equipment.
ꢀ
4,
ꢀ
Winsok
ꢀ
power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
strives
ꢀ
to
ꢀ
supply
ꢀ
high
Ͳ
quality
ꢀ
high
Ͳ
reliability
ꢀ
products.
ꢀ
However,
ꢀ
any
ꢀ
and
ꢀ
all
ꢀ
semiconductor
ꢀ
products
ꢀ
fail
ꢀ
with
ꢀ
some
ꢀ
probability.
ꢀ
It
ꢀ
is
ꢀ
possible
ꢀ
that
ꢀ
these
ꢀ
probabilistic
ꢀ
failures
ꢀ
could
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give
ꢀ
rise
ꢀ
to
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accidents
ꢀ
or
ꢀ
events
ꢀ
that
ꢀ
could
ꢀ
endanger
ꢀ
human
ꢀ
lives
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that
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could
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give
ꢀ
rise
ꢀ
to
ꢀ
smoke
ꢀ
or
ꢀ
fire,
ꢀ
or
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that
ꢀ
could
ꢀ
cause
ꢀ
damage
ꢀ
to
ꢀ
other
ꢀ
property.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
adopt
ꢀ
safety
ꢀ
measures
ꢀ
so
ꢀ
that
ꢀ
these
ꢀ
kinds
ꢀ
of
ꢀ
accidents
ꢀ
or
ꢀ
events
ꢀ
cannot
ꢀ
occur.
ꢀ
Such
ꢀ
measures
ꢀ
include
ꢀ
but
ꢀ
are
ꢀ
not
ꢀ
limited
ꢀ
to
ꢀ
protective
ꢀ
circuits
ꢀ
and
ꢀ
error
ꢀ
prevention
ꢀ
circuits
ꢀ
for
ꢀ
safe
ꢀ
design,
ꢀ
redundant
ꢀ
design,
ꢀ
and
ꢀ
structural
ꢀ
design.
ꢀ
5,In
ꢀ
the
ꢀ
event
ꢀ
that
ꢀ
any
ꢀ
or
ꢀ
all
ꢀ
Winsok
ꢀ
power
ꢀ
products(including
ꢀ
technical
ꢀ
data,
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services)
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described
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or
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contained
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herein
ꢀ
are
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controlled
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under
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any
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of
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applicable
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local
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export
ꢀ
control
ꢀ
laws
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and
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regulations,
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such
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products
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must
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not
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be
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exported
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without
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obtaining
ꢀ
the
ꢀ
export
ꢀ
license
ꢀ
from
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the
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authorities
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concerned
ꢀ
in
ꢀ
accordance
ꢀ
with
ꢀ
the
ꢀ
above
ꢀ
law.
ꢀ
6,
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No
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part
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of
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this
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publication
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may
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be
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reproduced
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transmitted
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in
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any
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by
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means,
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electronic
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or
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mechanical,
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including
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photocopying
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recording,
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or
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any
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information
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storage
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or
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retrieval
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system,
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or
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otherwise,
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without
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the
ꢀ
prior
ꢀ
written
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permission
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of
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Winsok
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power
ꢀ
Semiconductor
ꢀ
CO.,
ꢀ
LTD.
ꢀ
7,
ꢀ
Information
ꢀ
(including
ꢀ
circuit
ꢀ
diagrams
ꢀ
and
ꢀ
circuit
ꢀ
parameters)
ꢀ
herein
ꢀ
is
ꢀ
for
ꢀ
example
ꢀ
only;
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it
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is
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not
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guaranteed
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for
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volume
ꢀ
production. Winsok
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power
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believes
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information
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herein
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is
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accurate
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and
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reliable,
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but
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no
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guarantees
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are
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made
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or
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implied
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regarding
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its
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use
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or
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any
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infringements
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of
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rights
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or
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other
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rights
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of
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third
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parties.
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8,
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Any
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and
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all
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information
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described
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or
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contained
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herein
ꢀ
are
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subject
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to
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change
ꢀ
without
ꢀ
notice
ꢀ
due
ꢀ
to
ꢀ
product/technology
ꢀ
improvement,etc.
ꢀ
When
ꢀ
designing
ꢀ
equipment,
ꢀ
refer
ꢀ
to
ꢀ
the
ꢀ
“Delivery
ꢀ
Specification”
ꢀ
for
ꢀ
the
ꢀ
Winsok
ꢀ
power
ꢀ
product
ꢀ
that
ꢀ
you
ꢀ ꢀ
Intend
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to
ꢀ
use.
ꢀ
9,
ꢀ
this
ꢀ
catalog
ꢀ
provides
ꢀ
information
ꢀ
as
ꢀ
of
ꢀ
Sep.2014. Specifications
ꢀ
and
ꢀ
information
ꢀ
herein
ꢀ
are
ꢀ
subject
ꢀ
to
ꢀ
change
ꢀ
without
ꢀ
notice.
ꢀ
