Winsok-Semicon-WSTBSS138
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WSTBSS138
N-Ch MOSFET
General Description
Product Summery
The
WSTBSS138
is the highest performance
trench N-ch
MOSFETs with extreme high cell
density , which provide excellent RDSON and gate
charge for
most of the synchronous buck
converter applications
.
BVDSS
RDSON
ID
110
m
Ω
60V
2.1
A
Applications
The
WSTBSS138
meet the RoHS and Green
Product requirement
, 100% EAS guaranteed with
full function
reliability approved.
z
High Frequency Point-of-Load Synchronous
Buck Converter for MB/NB/UMPC/VGA
z
Networking DC-DC Power System
z
Load Switch
Features
SOT-23-3L
Pin Configuration
z
Advanced high cell density Trench technology
z
Super Low Gate Charge
z
Excellent CdV/dt effect decline
z
100% EAS Guaranteed
z
Green Device Available
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Rating
60
Units
V
Drain-Source Voltage
V
GS
Gate-Sou
r
ce Voltage
±
20
2.1
V
Continuous Drain Current, V
GS
@ 10V
1
Continuous Drain Current, V
GS
@ 10V
1
Pulsed Drain Current
2
A
I
D
@T
C
=25
℃
1.5
A
I
D
@T
C
=70
℃
I
DM
1
0
A
EAS
Single Pulse Avalanche Energy
3
15
mJ
A
I
AS
P
D
@T
A
=25
℃
T
STG
Avalanche Current
Total Power Dissipation
4
21
1.
25
W
℃
℃
Storage
T
e
mperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
T
J
Thermal Data
Symbol
R
θ
JA
Parameter
Typ.
—
Max.
Unit
℃
/W
℃
/W
Thermal Resistance Junction-ambient
1
Thermal Resistance Junction-Case
1
125
R
θ
JC
—
25
Rev:1.0 May.2019
Page 1
WSTBSS138
N-Ch MOSFET
Electrical Characteristics (T
J
=25
℃
, unless otherwise noted)
Symbol
Parameter
Conditions
V
GS
=0V , I
D
=250uA
Min.
55
—
—
—
1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
Max.
—
Unit
V
BV
DSS
Drain-Source Breakdown Voltage
BVDSS Temperature Coefficient
△
BV
DSS
/△
T
J
Reference to 25
℃
, I
D
=1mA
V
GS
=
4.5
V , I
D
=
2.1
A
0.04
1
85
—
V/
℃
11
0
12
0
R
DS(ON)
Static Drain-Source On-Resistance
2
m
Ω
95
V
GS
=
2
.5V , I
D
=
1.5
A
V
GS(th)
Gate Threshold Voltage
1.5
-4.
7
—
2.5
—
V
V
GS
=V
DS
, I
D
=250uA
△
V
GS(th)
V
GS(th)
Temperature Coefficient
mV/
℃
1
V
DS
=4
4
V , V
GS
=0V , T
J
=25
℃
V
DS
=4
4
V , V
GS
=0V , T
J
=
8
5
℃
I
DSS
Drain-Source Leakage Current
uA
—
5
V
GS
=
±
20V , V
DS
=0V
I
GSS
gfs
Gate-Source Leakage Current
Forward Transconductance
Gate Resistance
—
±
100
—
nA
S
V
DS
=5V , I
D
=4A
R
g
V
DS
=0V , V
GS
=0V , f=1MHz
2.5
2.1
0
.6
0.8
3
.6
3.5
32
5
Ω
Q
g
Total Gate Charge (10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
3.9
—
V
DS
=
27
V , V
GS
=
4.5
V , I
D
=
2.1
A
nC
ns
Q
gs
Q
gd
T
d(on)
T
r
—
—
V
DD
=
27
V , V
GS
=10V , R
G
=
6
Ω
I
D
=
1
A
—
T
d(off)
T
f
Turn-Off Delay Time
Fall Time
—
3
295
40
—
C
iss
C
oss
C
rss
Input Capacitance
—
V
DS
=15V , V
GS
=0V , f=1MHz
pF
Output Capacitance
Reverse Transfer Capacitance
—
15
—
Guaranteed Avalanche Characteristics
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
EAS
Single Pulse Avalanche Energy
5
V
DD
=25V , L=0.1mH , I
AS
=15A
15.
2
—
—
mJ
Diode Characteristics
Symbol
Parameter
Conditions
V
G
=V
D
=0V , Force Current
V
GS
=0V , I
S
=1A , T
J
=25
℃
Min.
—
Typ.
—
Max.
Unit
A
Continuous Source Current
1,6
Pulsed Source Current
2,6
Diode Forward Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
1
4
I
S
I
SM
V
SD
t
rr
—
—
A
—
—
1.2
—
V
—
1
0
.1
6.
4
nS
nC
I
F
=4A , dI/dt=100A/µs , T
J
=25
℃
Q
rr
—
—
Note :
1.The data tested by surface mounted on a 1 inch
2
FR-4 board with 2OZ copper
,t<10sec.
2.The data tested by pulsed , pulse width
≦
300us , duty cycle
≦
2%
3.The EAS data shows Max. rating . The test condition is V
DD
=25V,V
GS
=10V,L=0.1mH,I
AS
=
15
A
4.The power dissipation is limited by 150
℃
junction temperature
5.The Min. value is 100% EAS tested guarantee.
6.The data is theoretically the same as I
D
and I
DM
, in real applications , should be limited by total power dissipation.
Rev:1.0 May.2019
Page
2
WSTBSS138
N-Ch MOSFET
TYPICAL CHARACTERISTICS
(25
℃
Unless Note)
8
6
4
2
0
10
8
10V
3.5V
V
DS
=5V
5V
6
2.5V
4
125°C
V
GS
=2V
2
25°C
0
0
1
2
3
DS
(Volts)
4
5
1
1.25
1.5
1.75
2
2.25
2.5
V
V
GS
(Volts)
Fig 1: On-Region characteristics
Figure 2: Transfer Characteristics
200
180
160
140
120
100
2
1.8
1.6
1.4
1.2
1
V
GS
=2.5V
V
GS
=4.5
V
GS
=2.5V
V
GS
=4.5V
0.8
0
1
0
25
50
75
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
100
125
150
175
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
360
310
260
210
160
110
60
125°C
I
D
=2.3A
125°C
25°C
25°C
10
0.0
0.2
0.4
0.6
SD
(Volts)
Figure 6: Body-Diode Characteristics
0.8
1.0
1.2
1.4
0
2
6
8
10
V
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev:1.0 May.2019
Page
3
WSTBSS138
N-Ch MOSFET
400
360
320
280
240
200
160
120
80
5
4
3
2
1
0
V
DS
=27.5V
I
D
=2.1A
C
iss
C
oss
C
rss
40
0
0
5
10
15
DS
(Volts)
Figure 8: Capacitance Characteristics
20
25
30
0
1
2
3
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
100.0
10.0
1.0
15
T
J(Max)
=150°C
T
J(Max)
=150°C
T
A
=25°C
T
A
=25°C
R
DS(ON)
limited
10
5
100
µ
s
0.1s
10ms
1ms
1s
10s
DC
0
0.1
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
Pulse Width (s)
V
DS
(Volts)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
1
D=T
on
/T
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J,PK
=T
A
+P
DM
.Z
θ
JA
.R
θ
JA
R
θ
JA
=100°C/W
P
D
0.1
T
on
T
Single Pulse
0.001
0.01
0.00001
0.0001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Rev:1.0 May.2019
Page
4
Attention
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1,
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Any
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and
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all
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Winsok
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described
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that
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can
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handle
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applications
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that
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require
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extremely
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high
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levels
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of
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reliability,
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such
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as
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life
Ͳ
support
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systems,
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aircraft’s
ꢀ
control
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systems,
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or
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other
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applications
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whose
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failure
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can
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be
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reasonably
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expected
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to
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result
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in
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serious
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physical
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and/or
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material
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damage.
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Consult
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with
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your
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representative
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nearest
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before
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in
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for
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failures
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even
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momentarily,
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rated
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values
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(such
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maximum
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operating
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condition
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ranges,
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or
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listed
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in
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of
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characteristics,
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described
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in
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as
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in
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o
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test
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devices
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customer’s
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Winsok
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power
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Semiconductor
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CO.,
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LTD.
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Ͳ
quality
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fail
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probabilistic
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to
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When
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designing
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adopt
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safety
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so
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that
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these
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kinds
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for
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parameters)
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When
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the
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“Delivery
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Specification”
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this
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Sep.2014. Specifications
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are
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subject
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change
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notice.
ꢀ
