Wolfspeed-C3M0032120K
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V
DS
I
D
1200 V
63 A
@
25˚C
C3M0032120K
R
DS(on)
32 m
Ω
Silicon Carbide Power MOSFET
C3M
TM
MOSFET Technology
N-Channel Enhancement Mode
Features
Package
•
•
•
•
•
•
•
3rd generation SiC MOSFET technology
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q
rr
)
Halogen free, RoHS compliant
Benefits
Drain
(Pin 1, TAB)
•
•
•
•
•
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Gate
(Pin 4)
Driver
Source
(Pin 3)
Power
Source
(Pin 2)
Applications
•
•
•
•
•
Solar inverters
EV motor drive
High voltage DC/DC converters
Switched mode power supplies
Load switch
Marking
Part Number
Package
C3M0032120K
TO 247-4
C3M0032120K
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
V
GS
= 0
V
,
I
D
= 100 μA
Note
1200
-8/+19
-4/+15
63
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage (dynamic)
Gate – Source Voltage (static)
AC (f >1 Hz)
Note 1
Note 2
Static
V
GS
= 15
V
,
T
C
= 25˚C
V
GS
= 15
V
,
T
C
= 100˚C
Continuous Drain Current
Pulsed Drain Current
A
A
Fig. 19
I
D
48
120
283
Pulse width t
P
limited by T
jmax
I
D(pulse)
P
D
Power Dissipation
W
˚C
˚C
T
C
=25˚C, T
= 175 ˚C
Fig. 20
J
-40 to
+175
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
T
L
Note (1):
When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2):
MOSFET can also safely operate at 0/+15 V
1
C3M0032120K Rev. 3,
11-2020
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1200
1.8
Typ.
Max. Unit
Test Conditions
V
GS
= 0
V
,
I
D
= 100 μA
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
2.5
2.0
1
3.6
V
V
V
DS
= V
GS
, I
D
= 11.5 mA
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
DS
= V
GS
, I
D
= 11.5 mA, T
J
= 175ºC
V
DS
= 1200
V
,
V
GS
= 0 V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
50
250
43
μA
nA
10
V
GS
= 15
V
,
V
DS
= 0 V
23
32
V
GS
= 15
V
,
I
D
= 40 A
Fig. 4,
5, 6
R
DS(on)
Drain-Source On-State Resistance
Transconductance
m
Ω
57.6
27
V
GS
= 15
V
,
I
D
= 40 A, T
J
= 175ºC
V
DS
= 20
V
,
I
DS
= 40 A
g
fs
S
Fig. 7
22
V
DS
= 20
V
,
I
DS
= 40 A, T
J
= 175ºC
C
iss
Input Capacitance
Output Capacitance
3357
129
V
GS
= 0
V
,
V
DS
= 1000 V
Fig. 17,
18
C
oss
pF
f = 100 kHz
C
rss
E
oss
E
ON
Reverse Transfer Capacitance
C
oss
Stored Energy
8
AC
V
= 25 mV
76
μJ
μJ
Fig. 16
Fig. 26
Turn-On Switching Energy (SiC Diode FWD)
367
V
DS
= 800
V
,
V
GS
= -4 V/+15
V
,
I
D
= 40 A,
R
G(ext)
= 2.5Ω, L= 65.7 μH, Tj = 175
ºC
E
OFF
E
ON
Turn Off Switching Energy (SiC Diode FWD)
Turn-On Switching Energy (Body Diode FWD)
Turn Off Switching Energy (Body Diode FWD)
123
955
107
V
DS
= 800
V
,
V
GS
= -4 V/+15
V
,
I
D
= 40 A,
R
G(ext)
= 2.5Ω, L= 65.7 μH, Tj = 175
ºC
μJ
Fig. 26
Fig. 27
E
OFF
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Rise Time
25
18
V
DD
= 800
V
,
V
GS
= -4 V/15 V
R
G(ext)
= 2.5 Ω,
I
D
= 40 A,
L= 65.7
Timing relative to V
DS
, Inductive load
ns
Turn-Off Delay Time
Fall Time
32
9
,
R
G(int)
Q
gs
Q
gd
Q
g
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
1.7
40
34
118
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 800
V
,
V
GS
= -4 V/15 V
I
D
= 40 A
Per IEC60747-8-4 pg 21
nC
Fig. 12
2
C3M0032120K Rev. 3,
11-2020
(T
= 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
4.6
Max.
Unit
Test Conditions
Note
V
V
GS
= -4
V
,
I
SD
= 20 A, T
= 25 °C
J
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
4.2
V
A
V
GS
= -4
V
,
I
SD
= 20 A, T
= 175 °C
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode pulse Current
62
Note 1
Note 1
V
GS
= -4
V
,
T
C
= 25˚C
120
A
V
GS
= -4
V
,
p
ulse width t
P
limited by T
jmax
Reverse Recover time
27
478
27
ns
nC
A
V
GS
= -4
V
,
I
SD
= 40 A, V
R
= 800 V
Q
rr
Reverse Recovery Charge
Peak Reverse Recovery Current
Note 1
dif/dt = 2250 A/µs, T
= 175 °C
J
I
rrm
Thermal Characteristics
Symbol
R
θ
JC
Parameter
Typ.
0.45
40
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
R
θ
JA
Thermal Resistance From Junction to Ambient
3
C3M0032120K Rev. 3,
11-2020
Typical Performance
120
120
100
80
60
40
20
0
V
GS
= 15V
V
GS
= 13V
V
GS
= 15V
Conditions:
T
J
= -40 °C
tp = < 200 µs
Conditions:
T
J
= 25 °C
tp = < 200 µs
V
GS
= 13V
V
GS
= 11V
100
80
60
40
20
0
V
GS
= 11V
V
GS
= 9V
V
GS
= 9V
V
GS
= 7V
V
GS
= 7V
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -40 ºC
Figure 2. Output Characteristics T
J
= 25 ºC
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
120
100
80
60
40
20
0
Conditions:
T
J
= 175 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 13V
Conditions:
I
DS
= 40 A
V
GS
= 15 V
t
p
< 200 µs
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
-40
-20
0
20
40
60
80
100
120
140
160
180
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Junction Temperature, T
J
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 175 ºC
Figure 4. Normalized On-Resistance vs. Temperature
80
70
60
50
40
30
20
10
0
90
Conditions:
V
GS
= 15 V
t
p
< 200 µs
Conditions:
I
DS
= 40 A
t
p
< 200 µs
80
70
60
50
40
30
20
10
0
T
J
= 175 °C
V
GS
= 11 V
T
J
= -40 °C
T
J
= 25 °C
V
GS
= 13 V
V
GS
= 15 V
-40
-5
30
65
100
135
170
0
20
40
60
80
100
120
140
160
Junction Temperature, T
J
(°C)
Drain-Source Current, I
DS
(A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
4
C3M0032120K Rev. 3,
11-2020
Typical Performance
160
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
Conditions:
V
DS
= 20 V
tp < 200 µs
0
140
V
GS
= -4 V
T
J
= 175 °C
T
J
= 25 °C
-20
-40
-60
-80
-100
-120
120
100
80
60
40
20
0
V
GS
= 0 V
V
GS
= -2 V
T
J
= -40 °C
Conditions:
T
J
= -40°C
t
p
< 200 µs
0
2
4
6
8
10
12
14
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -40 ºC
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
V
GS
= -4 V
V
GS
= -4 V
-20
-40
-60
-80
-100
-120
-20
-40
-60
-80
-100
-120
V
GS
= 0 V
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -2 V
Conditions:
T
J
= 25°C
t
p
< 200 µs
Conditions:
T
J
= 175°C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 175 ºC
4.0
16
Conditions:
I
DS
= 40 A
Conditons
V
GS
= V
DS
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
I
DS
= 11.5 mA
12
8
4
0
-4
-40
-5
30
65
100
135
170
0
20
40
60
80
100
120
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
5
C3M0032120K Rev. 3,
11-2020
Typical Performance
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
0
-20
-40
-60
-80
-100
-120
-20
-40
-60
-80
-100
-120
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 10 V
V
GS
= 15 V
Conditions:
T
J
= -40 °C
t
p
< 200 µs
Conditions:
T
J
= 25 °C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -40 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
120
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
0
V
GS
= 0 V
100
80
60
40
20
0
-20
-40
-60
-80
-100
-120
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
Conditions:
T
J
= 175 °C
t
p
< 200 µs
0
200
400
600
800
1000
1200
Drain to Source Voltage, V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 15. 3rd Quadrant Characteristic at 175 ºC
Figure 16. Output Capacitor Stored Energy
10000
10000
1000
100
10
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
C
iss
C
iss
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 100 kHz
1000
100
10
C
oss
C
oss
C
rss
C
rss
1
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
0
200
400
600
800
1000
1200
Drain-Source Voltage, V
DS
(V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 1200V)
6
C3M0032120K Rev. 3,
11-2020
Typical Performance
80
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
Conditions:
T
J
≤ 175
°C
Conditions:
T
J
≤ 175
°C
0
-55
-30
-5
20
45
70
95
120
145
170
-55
-30
-5
20
45
70
95
120
145
170
Case Temperature, T
C
(°C)
Case Temperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
1
Limited by R
DS On
10 µs
100 µs
0.5
0.3
10.00
1.00
0.10
0.01
1 ms
100 ms
100E-3
0.1
0.05
0.02
10E-3
1E-3
0.01
Conditions:
T
C
= 25 °C
D = 0,
SinglePulse
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, t
p
(s)
10E-3
100E-3
1
Drain-Source Voltage, V
DS
(V)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
1200
800
700
600
500
400
300
200
100
0
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
V
DD
= 600 V
R
G(ext)
= 2.5
Ω
V
GS
= -4V/+15V
FWD = C3M0032120K
L = 65.7
μ
H
E
Total
E
Total
V
DD
= 800 V
R
G(ext)
= 2.5
Ω
V
GS
= -4V/+15V
FWD = C3M0032120K
L = 65.7
μ
H
1000
800
600
400
200
0
E
On
E
On
E
Off
E
Off
0
10
20
30
40
50
60
70
0
10
20
30
40
50
60
70
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 800V)
7
C3M0032120K Rev. 3,
11-2020
Typical Performance
2500
1200
1000
800
600
400
200
0
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 40 A
V
GS
= -4V/+15 V
FWD = C3M0032120K
L = 65.7
μ
H
Conditions:
I
DS
= 40 A
V
DD
= 800 V
R
G(ext)
= 2.5
Ω
V
GS
= -4V/+15 V
L = 65.7
μ
H
E
Total
E
On
E
Total
2000
FWD = C3M0032120K
– – – – FWD = C4D20120A
1500
1000
500
0
E
On
E
Total
(FWD Diode)
E
Off
E
On
(FWD Diode)
E
Off
(FWD Diode)
E
Off
0
5
10
15
20
25
0
25
50
75
100
125
150
175
200
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, T
J
(°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
120
Conditions:
T
J
= 25 °C
V
DD
= 800 V
t
d(off)
100
80
60
40
20
0
I
DS
= 40 A
V
GS
= -4V/+15 V
FWD = C3M0032120K
t
d(on)
t
r
t
f
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R
G(ext)
Figure 28. Switching Times Definition
8
C3M0032120K Rev. 3,
11-2020
Test Circuit Schematic
R
G
Q
1
L
V
GS
= – 4 V
KS
V
DC
C
DC
Q
2
R
G
D.U.T
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
9
C3M0032120K Rev. 3,
11-2020
Package Dimensions
Package TO-247-4L
10
C3M0032120K Rev. 3,
11-2020
Package Dimensions
Package TO-247-4L
NOTE ;
1. ALL METAL SURFACES: TIN PL
A
T
ED, EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS
11
C3M0032120K Rev. 3,
11-2020
Notes
•
•
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
•
•
•
SPICE Models:
http:
/
/
wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design:
http:
/
/
wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board:
http:
/
/
wolfspeed.com/power/tools-and-support
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2020 Cree, Inc. All rights reserved.
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
C3M0032120K Rev. 3,
11-2020
12
