Wolfspeed-C3M0075120K-A
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V
DS
I
D
1200 V
32 A
@
25˚C
C3M0075120K
R
DS(on)
75 m
Ω
Silicon Carbide Power MOSFET
C3M
TM
MOSFET Technology
N-Channel Enhancement Mode
Features
Package
•
•
•
•
•
•
•
3rd generation SiC MOSFET technology
Tab
Drain
Optimized package with separate driver source pin
8mm of creepage distance between drain and source
High blocking voltage with low on-resistance
High-speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Q
rr
)
Halogen free, RoHS compliant
Benefits
1
D
2
S
3
S
4
G
Drain
(Pin 1, TAB)
•
•
•
•
•
Reduce switching losses and minimize gate ringing
Higher system efficiency
Reduce cooling requirements
Increase power density
Increase system switching frequency
Gate
(Pin 4)
Driver
Source
(Pin 3)
Power
Source
(Pin 2)
Applications
•
•
•
•
Renewable energy
EV battery chargers
High voltage DC/DC converters
Switch Mode Power Supplies
Ordering Part
Number
Package
Marking
T ,
T
stg
Range
J
C3M0075120K
TO 247-4
TO 247-4
C3M0075120K
-55 – 150
˚C
-40 – 175
˚C
C3M0075120K-A
C3M0075120K-A
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
Note
V
GS
= 0
V
,
I
D
= 100 μA
AC (f >1 Hz)
Static
1200
-8/+19
-4/+15
32
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage (dynamic)
Gate – Source Voltage (static)
Note: 1
Note: 2
Fig. 19
V
GS
= 15
V
,
T
C
= 25˚C
V
GS
= 15
V
,
T
C
= 100˚C
Continuous Drain Current
Pulsed Drain Current
A
A
I
D
23
80
Fig. 22
Fig. 20
I
D(pulse)
P
D
Pulse width t
P
limited by T
jmax
Power Dissipation
136
W
˚C
˚C
T
C
=25˚C, T
= 175 ˚C
J
-40 to
+175
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
T
L
Note (1):
When using MOSFET Body Diode V
GSmax
= -4V/+19V
Note (2):
MOSFET can also safely operate at 0/+15 V
1
C3M0075120K Rev. 5,
01-2021
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
1200
1.8
Typ.
Max. Unit
Test Conditions
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
GS
= 0
V
,
I
D
= 100 μA
2.5
2.2
1
3.6
V
DS
= V
GS
, I
D
= 5 mA
V
V
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
DS
= V
GS
, I
D
= 5 mA, T
J
= 175ºC
V
DS
= 1200
V
,
V
GS
= 0 V
V
GS
= 15
V
,
V
DS
= 0 V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
50
250
90
μA
nA
10
75
120
12
13
V
GS
= 15
V
,
I
D
= 20 A
Fig. 4,
5, 6
R
DS(on)
Drain-Source On-State Resistance
Transconductance
m
Ω
V
GS
= 15
V
,
I
D
= 20A, T
J
= 175ºC
V
DS
= 20
V
,
I
DS
= 20 A
g
fs
S
Fig. 7
V
DS
= 20
V
,
I
DS
= 20 A, T
J
= 175ºC
C
iss
C
oss
C
rss
E
oss
Input Capacitance
1390
58
Fig. 17,
18
V
GS
= 0
V
,
V
DS
= 1000 V
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
pF
f = 1 MHz
2
AC
V
= 25 mV
33
μJ
μJ
Fig. 16
E
ON
Turn-On Switching Energy (Body Diode FWD)
270
V
DS
= 800
V
,
V
GS
= -4 V/15
V
,
I
D
= 20A,
Fig. 26,
29
R
G(ext)
= 0 Ω, L= 156 μH,
T
J
= 150ºC
E
OFF
t
d(on)
t
r
Turn-Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
77
30
14
V
DD
= 800
V
,
V
GS
= -4 V/15 V
I
D
= 20 A, R
G(ext)
= 0 Ω,
Timing relative to V
DS
Inductive load
Rise Time
Fig. 27,
28
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
38
10
,
R
G(int)
Q
gs
Q
gd
Q
g
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
9.0
17
18
53
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 800
V
,
V
GS
= -4 V/15 V
I
D
= 20 A
nC
Fig. 12
Per IEC60747-8-4 pg 21
(T
= 25˚C unles1s otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
Note
4.5
V
V
V
GS
= -4
V
,
I
SD
= 10 A
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
4.0
V
GS
= -4
V
,
I
SD
= 10 A, T
= 175 °C
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode pulse Current
26
A
Note 1
Note 1
V
GS
= -4
V
,
T
= 25 ˚C
J
80
20
A
V
GS
= -4
V
,
pulse width t
P
limited by T
jmax
Reverse Recover time
ns
V
GS
= -4
V
,
I
SD
= 20 A, V
R
= 800 V
Note 1
Q
rr
I
rrm
Reverse Recovery Charge
254
18
nC
A
dif/dt = 3600 A/µs, T
= 150 °C
J
Peak Reverse Recovery Current
Thermal Characteristics
Symbol
R
θ
JC
Parameter
Max.
1.1
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
R
θ
JA
Thermal Resistance From Junction to Ambient
40
2
C3M0075120K Rev. 5,
01-2021
Typical Performance
80
80
70
60
50
40
30
20
10
0
Conditions:
T
J
= -40 °C
tp = < 200 µs
Conditions:
T
J
= 25 °C
tp = < 200 µs
V
GS
= 15V
V
GS
= 15V
V
GS
= 13V
70
60
50
40
30
20
10
0
V
GS
= 13V
V
GS
= 11V
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
V
GS
= 9V
V
GS
= 7V
0.0
2.0
4.0
6.0
8.0
10.0
0.0
2.0
4.0
6.0
8.0
10.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -40 ºC
Figure 2. Output Characteristics T
J
= 25 ºC
80
70
60
50
40
30
20
10
0
2.0
Conditions:
T
J
= 175 °C
tp = < 200 µs
Conditions:
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
DS
= 20 A
V
GS
= 15 V
t
p
< 200 µs
V
GS
= 15V
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
-50
-25
0
25
50
75
100
125
150
175
0.0
2.0
4.0
6.0
8.0
10.0
Junction Temperature, T
J
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 175 ºC
Figure 4. Normalized On-Resistance vs. Temperature
180
160
140
120
100
80
200
180
160
140
120
100
80
Conditions:
V
GS
= 15 V
t
p
< 200 µs
Conditions:
I
DS
= 20 A
t
p
< 200 µs
T
J
= 175 °C
V
GS
= 11 V
V
GS
= 13 V
V
GS
= 15 V
T
J
= -40 °C
T
J
= 25 °C
60
60
40
40
20
20
0
0
0
10
20
30
40
50
60
-50
-25
0
25
50
75
100
125
150
175
Drain-Source Current, I
DS
(A)
Junction Temperature, T
J
(°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
3
C3M0075120K Rev. 5,
01-2021
Typical Performance
80
-10
-8
-6
-4
-2
0
Conditions:
0
V
DS
= 20 V
70
60
50
40
30
20
10
0
tp < 200 µs
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= -4 V
T
J
= 175 °C
V
GS
= 0 V
T
J
= 25 °C
V
GS
= -2 V
T
J
= -40 °C
Conditions:
T
J
= -40°C
t
p
< 200 µs
0
2
4
6
8
10
12
14
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -40 ºC
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
-10
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= -4 V
V
GS
= -4 V
V
GS
= 0 V
-20
-30
-40
-50
-60
-70
-80
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -2 V
Conditions:
T
J
= 175°C
t
p
< 200 µs
Conditions:
T
J
= 25°C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 175 ºC
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
Conditons
V
GS
= V
DS
I
DS
= 5 mA
Conditions:
I
DS
= 20 A
I
GS
= 50 mA
V
DS
= 800 V
T
J
= 25 °C
12
8
4
0
-4
-50
-25
0
25
50
75
100
125
150
175
0
10
20
30
40
50
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0075120K Rev. 5,
01-2021
Typical Performance
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
-10
-20
-30
-40
-50
-60
-70
-80
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= 0 V
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 15 V
Conditions:
T
J
= -40 °C
p
< 200 µs
Conditions:
T
J
= 25 °C
t
p
< 200 µs
t
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -40 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
40
-10
-8
-6
-4
-2
0
0
35
30
25
20
15
10
5
-10
-20
-30
-40
-50
-60
-70
-80
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
Conditions:
T
J
= 175 °C
t
p
< 200 µs
0
0
200
400
600
800
1000
Drain to Source Voltage, V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 15. 3rd Quadrant Characteristic at 175 ºC
Figure 16. Output Capacitor Stored Energy
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
V
AC
= 25 mV
f = 1 MHz
10000
10000
1000
100
10
C
iss
C
iss
1000
100
10
C
oss
C
oss
C
rss
C
rss
1
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
0
200
400
600
800
1000
Drain-Source Voltage, V
DS
(V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 1000V)
5
C3M0075120K Rev. 5,
01-2021
Typical Performance
35
30
25
20
15
10
5
140
120
100
80
Conditions:
T
J
≤ 175
°C
Conditions:
T
J
≤ 175
°C
60
40
20
0
0
-50
-25
0
25
50
75
100
125
150
175
-50
-25
0
25
50
75
100
125
150
175
Case Temperature, T
C
(°C)
Case Temperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
100.00
1
0.5
Limited by R
DS On
1 µs
10.00
0.3
0.1
10 µs
100E-3
100 µs
0.05
1.00
0.10
0.01
0.02
1 ms
0.01
100 ms
10E-3
1E-3
SinglePulse
Conditions:
T
C
= 25 °C
D = 0,
Parameter:
t
p
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, t
p
(s)
10E-3
100E-3
1
10
Drain-Source Voltage, V
DS
(V)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
800
600
500
400
300
200
100
0
Conditions:
T
J
= 25 °C
Conditions:
T
J
= 25 °C
V
DD
= 600 V
R
G(ext)
= 0
Ω
V
GS
= -4V/+15 V
FWD = C3M0075120K
L = 156
μ
H
E
Total
E
Total
V
DD
= 800 V
R
G(ext)
= 0
Ω
V
GS
= -4V/+15 V
FWD = C3M0075120K
L = 156
μ
H
600
400
200
0
E
On
E
On
E
Off
E
Off
0
5
10
15
20
25
30
35
40
45
0
5
10
15
20
25
30
35
40
45
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 800V)
6
C3M0075120K Rev. 5,
01-2021
Typical Performance
1000
600
500
400
300
200
100
0
Conditions:
I
DS
= 20 A
V
DD
= 800 V
R
G(ext)
= 0
Ω
V
GS
= -4V/+15 V
FWD = C3M0075120K
L = 156
μ
H
Conditions:
T
J
= 25 °C
V
DD
= 800 V
E
Total
I
DS
= 20 A
800
600
400
200
0
E
Total
V
GS
= -4V/+15 V
FWD = C3M0075120K
L = 156
μ
H
E
On
E
On
E
Off
E
Off
0
5
10
15
20
25
0
25
50
75
100
125
150
175
External Gate Resistor RG(ext) (Ohms)
Junction Temperature, T
J
(°C)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
80
Conditions:
T
J
= 25 °C
V
DD
= 800 V
I
DS
= 20 A
V
GS
= -4V/+15 V
FWD = C3M0075120K
L = 156
μ
H
60
40
20
0
t
d(off)
t
d(on)
t
r
t
f
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R
G(ext)
Figure 28. Switching Times Definition
7
C3M0075120K Rev. 5,
01-2021
Test Circuit Schematic
R
G
Q
1
L
V
GS
= – 4 V
KS
V
DC
C
DC
Q
2
R
G
D.U.T
KS
Figure 29. Clamped Inductive Switching
Waveform Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
8
C3M0075120K Rev. 5,
01-2021
Package Dimensions
Package TO-247-4L
9
C3M0075120K Rev. 5,
01-2021
Package Dimensions
Package TO-247-4L
NOTE ;
1. ALL METAL SURFACES: TIN PL
A
T
ED, EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. ‘N’ IS THE NUMBER OF TERMINAL POSITIONS
10
C3M0075120K Rev. 5,
01-2021
Notes
•
•
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
•
•
•
SPICE Models:
http:
/
/
wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design:
http:
/
/
wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board:
http:
/
/
wolfspeed.com/power/tools-and-support
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2021 Cree, Inc. All rights reserved.
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
C3M0075120K Rev. 5,
01-2021
11
