Wolfspeed-C3M0280090D
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C3M0280090D
Silicon Carbide Power MOSFET
C3M
TM
MOSFET Technology
N-Channel Enhancement Mode
Features
Package
•
•
•
•
•
C3M SiC MOSFET technology
High blocking voltage with low On-resistance
High speed switching with low capacitances
Fast intrinsic diode with low reverse recovery (Qrr)
Halogen free, RoHS compliant
Benefits
•
•
•
•
Higher system efficiency
Reduced cooling requirements
Increased power density
Increased system switching frequency
Applications
•
•
•
•
•
Renewable energy
Lighting
High voltage DC/DC converters
Telecom Power Supplies
Induction Heating
Part Number
Package
Marking
C3M0280090D
TO-247-3
C3M0280090
Maximum Ratings
(T
C
= 25 ˚C unless otherwise specified)
Symbol
Parameter
Drain – Source Voltage
Value
Unit
Test Conditions
Note
V
GS
= 0
V
,
I
D
= 100 μA
900
-8/+19
-4/+15
10.2
V
V
V
V
DSmax
V
GSmax
V
GSop
Gate – Source Voltage (dynamic)
Gate – Source Voltage (static)
AC (f >1 Hz)
Note: 1
Note: 2
Fig. 19
Static
V
GS
= 15
V
,
T
C
= 25˚C
V
GS
= 15
V
,
T
C
= 100˚C
Continuous Drain Current
Pulsed Drain Current
A
A
I
D
6.8
22
45
Fig. 22
Fig. 20
I
D(pulse)
P
D
Pulse width t
P
limited by T
jmax
Power Dissipation
W
˚C
˚C
T
C
=25˚C, T
= 150 ˚C
J
-55 to
+150
Operating Junction and Storage Temperature
Solder Temperature
T ,
T
stg
J
260
1.6mm (0.063”) from case for 10s
M3 or 6-32 screw
T
L
1
8.8
Nm
lbf-in
Mounting Torque
M
d
Note (1):
When using MOSFET Body Diode V
= -4V/+19V
Note (2):
MOSFET can also safely operate at
G
0
S
m
/
+
ax
15 V
1
C3M0280090D Rev. 2, 09-2021
Electrical Characteristics
(T
C
= 25˚C unless otherwise specified)
Symbol
Parameter
Min.
900
1.8
Typ.
Max. Unit
Test Conditions
Note
V
(BR)DSS
Drain-Source Breakdown Voltage
V
V
GS
= 0
V
,
I
D
= 100 μA
2.7
2.2
1
3.5
V
DS
= V
GS
, I
D
= 1.2 mA
V
V
V
GS(th)
Gate Threshold Voltage
Fig. 11
V
DS
= V
GS
, I
D
= 1.2 mA,
T
J
= 150ºC
V
DS
= 900
V
,
V
GS
= 0 V
I
DSS
I
GSS
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
100
250
360
μA
nA
10
V
GS
= 15
V
,
V
DS
= 0 V
320
416
3.6
3.6
V
GS
= 15
V
,
I
D
= 7.5 A
Fig. 4,
5, 6
R
DS(on)
Drain-Source On-State Resistance
Transconductance
m
Ω
V
GS
= 15
V
,
I
D
= 7.5 A, T
J
= 150ºC
V
DS
= 15
V
,
I
DS
=
7.5 A
g
fs
S
Fig. 7
V
DS
= 15
V
,
I
DS
=
7.5 A,
T
J
= 150ºC
C
iss
C
oss
C
rss
E
oss
Input Capacitance
204
26
3
Fig. 17,
18
V
GS
= 0
V
,
V
DS
= 600 V
Output Capacitance
Reverse Transfer Capacitance
C
oss
Stored Energy
pF
f = 1 MHz
AC
V
= 25 mV
5.5
μJ
μJ
Fig. 16
Fig. 26,
29
Note 3
E
ON
Turn-On Switching Energy (Body Diode FWD)
80
V
DS
= 400
V
,
V
GS
= -4 V/15
V
,
I
D
= 7.5 A,
R
G(ext)
= 2.5Ω, L= 201 μH,
T
J
= 150ºC
E
OFF
t
d(on)
t
r
Turn Off Switching Energy (Body Diode FWD)
Turn-On Delay Time
6
5.3
25
V
DD
= 400
V
,
V
GS
= -4 V/15 V
I
D
= 7.5 A, R
G(ext)
= 2.5 Ω,
Timing relative to V
DS
Inductive load
Fig. 27,
29
Note 3
Rise Time
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
8.5
6.4
,
R
G(int)
Q
gs
Q
gd
Q
g
Internal Gate Resistance
Gate to Source Charge
Gate to Drain Charge
Total Gate Charge
23.5
3.0
Ω
f = 1 MHz
V
AC
= 25 mV
V
DS
= 400
V
,
V
GS
= -4 V/15 V
2.9
I
D
= 7.5 A
nC
Fig. 12
Per IEC60747-8-4 pg 21
9.7
(T
= 25˚C unless otherwise specified)
Reverse Diode Characteristics
C
Symbol
Parameter
Typ.
4.8
Max.
Unit
Test Conditions
Note
V
V
V
GS
= -4
V
,
I
SD
= 4 A
Fig. 8,
9, 10
V
SD
Diode Forward Voltage
4.4
V
GS
= -4
V
,
I
SD
= 4 A, T
= 150 °C
J
I
S
I
S, pulse
t
rr
Continuous Diode Forward Current
Diode pulse Current
9
A
V
GS
= -4 V
Note 1
Note 1
22
A
V
GS
= -4
V
,
pulse width t
P
limited by T
jmax
Reverse Recover time
24
ns
V
GS
= -4
V
,
I
SD
= 7.5 A, V
R
= 400 V
Note 1
Q
rr
I
rrm
Reverse Recovery Charge
74
4
nC
dif/dt = 775 A/µs,
T =
150 °C
J
Peak Reverse Recovery Current
A
Thermal Characteristics
Symbol
R
θ
JC
Parameter
Max.
2.8
Unit
Test Conditions
Note
Thermal Resistance from Junction to Case
°C/W
Fig. 21
R
θ
JA
Thermal Resistance From Junction to Ambient
40
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode
2
C3M0280090D Rev. 2, 09-2021
Typical Performance
20
20
16
12
8
Conditions:
V
GS
= 15V
Conditions:
T
j
= 25 °C
tp = < 200 µs
V
GS
= 15V
T
j
= -55 °C
tp = < 200 µs
16
V
GS
= 13V
V
GS
= 13V
V
GS
= 11V
12
8
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
4
4
V
GS
= 9V
V
GS
= 7V
0
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
Drain-Source Voltage, V
DS
(V)
Drain-Source Voltage, V
DS
(V)
Figure 1. Output Characteristics T
J
= -55 ºC
Figure 2. Output Characteristics T
J
= 25 ºC
20
16
12
8
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Conditions:
T
j
= 150 °C
tp = < 200 µs
Conditions:
I
DS
= 7.5 A
GS
= 15 V
t
p
< 200 µs
V
GS
= 15V
V
V
GS
= 13V
V
GS
= 11V
V
GS
= 9V
V
GS
= 7V
4
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
-50
-25
0
25
50
75
100
125
150
Junction Temperature, T
j
(°C)
Drain-Source Voltage, V
DS
(V)
Figure 3.
Output Characteristics T
J
= 150 ºC
Figure 4. Normalized On-Resistance vs. Temperature
1,200
1,000
800
600
400
200
0
700
600
500
400
300
200
100
0
Conditions:
I
DS
= 7.5 A
t
p
< 200 µs
Conditions:
V
GS
= 15 V
t
p
< 200 µs
T
j
= 150 °C
V
GS
= 11 V
T
j
= -55 °C
T
j
= 25 °C
V
GS
= 13 V
V
GS
= 15 V
0
5
10
15
20
25
-50
-25
0
25
50
75
100
125
150
Drain-Source Current, I
DS
(A)
Junction Temperature, T
j
(°C)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
3
C3M0280090D Rev. 2, 09-2021
Typical Performance
20
-10
-8
-6
-4
-2
0
Conditions:
0
V
DS
= 20 V
tp < 200 µs
16
12
8
-4
T
J
= 150 °C
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
-8
T
J
= 25 °C
T
J
= -55 °C
-12
-16
-20
4
Conditions:
T
j
= -55°C
t
p
< 200 µs
0
0
2
4
6
8
10
12
14
Drain-Source Voltage V
DS
(V)
Gate-Source Voltage, V
GS
(V)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
Figure 8. Body Diode Characteristic at -55 ºC
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
-4
-4
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
V
GS
= -4 V
V
GS
= 0 V
V
GS
= -2 V
-8
-8
-12
-16
-20
-12
-16
-20
Conditions:
T
j
= 25°C
t
p
< 200 µs
Conditions:
T
j
= 150°C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
4.0
16
12
8
Conditons
V
GS
= V
DS
I
DS
= 1.2 mA
Conditions:
I
DS
= 7.5 A
I
GS
= 11 mA
V
DS
= 400 V
T
J
= 25 °C
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
4
0
-4
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
Junction Temperature T
J
(°C)
Gate Charge, Q
G
(nC)
Figure 11. Threshold Voltage vs. Temperature
Figure 12. Gate Charge Characteristics
4
C3M0280090D Rev. 2, 09-2021
Typical Performance
-10
-8
-6
-4
-2
0
-10
-8
-6
-4
-2
0
0
0
V
GS
= 0 V
-4
-4
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 5 V
-8
-8
V
GS
= 10 V
V
GS
= 15 V
V
GS
= 10 V
V
GS
= 15 V
-12
-16
-20
-12
-16
-20
Conditions:
T
j
= -55 °C
t
p
< 200 µs
Conditions:
T
j
= 25 °C
t
p
< 200 µs
Drain-Source Voltage V
DS
(V)
Drain-Source Voltage V
DS
(V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
Figure 14. 3rd Quadrant Characteristic at 25 ºC
-10
-8
-6
-4
-2
0
12
0
10
8
-4
-8
V
GS
= 0 V
V
GS
= 5 V
V
GS
= 10 V
V
GS
= 15 V
6
-12
4
2
-16
-20
Conditions:
T
j
= 150 °C
t
p
< 200 µs
0
0
200
400
600
800
1000
Drain-Source Voltage V
DS
(V)
Drain to Source Voltage, V
DS
(V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
Figure 16. Output Capacitor Stored Energy
1000
1000
100
10
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
Conditions:
T
J
= 25 °C
V
AC
= 25 mV
f = 1 MHz
C
iss
C
iss
100
10
1
C
oss
C
oss
C
rss
C
rss
1
0
50
100
Drain-Source Voltage, V
DS
(V)
150
200
0
100
200
300
400
500
600
700
800
900
Drain-Source Voltage, V
DS
(V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0 – 200V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0 – 900V)
5
C3M0280090D Rev. 2, 09-2021
Typical Performance
12
10
8
50
40
30
20
10
0
Conditions:
T
J
≤ 150
°C
Conditions:
T
J
≤ 150
°C
6
4
2
0
-50
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
Case Temperature, T
C
(°C)
Case Temperature, T
C
(°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
10.00
0.5
0.3
Limited by R
DS On
1
1 µs
10 µs
0.1
1.00
0.10
0.01
100 µs
0.05
100E-3
0.02
0.01
1 ms
100 ms
Conditions:
T
C
= 25 °C
D = 0,
SinglePulse
Parameter:
t
p
10E-3
0.1
1
10
100
1000
1E-6
10E-6
100E-6
1E-3
Time, t
p
(s)
10E-3
100E-3
1
Drain-Source Voltage, V
DS
(V)
Figure 21. Transient Thermal Impedance
(Junction – Case)
Figure 22. Safe Operating Area
250
350
300
250
200
150
100
50
E
Total
E
On
Conditions:
Conditions:
T =
V
DD
T =
V
DD
R
G(ext)
V
GS
FWD =
25 °C
=
=
25 °C
J
J
=
600 V
400 V
E
Total
E
On
R
G(ext)
=
2.5 Ω
-4/+15 V
FWD =
2.5 Ω
-4/+15 V
C3M0280090D
201 μH
200
150
100
50
=
V
GS
=
C3M0280090D
L =
201 μH
L =
E
Off
E
Off
0
0
0
2
4
6
8
10
12
14
16
0
2
4
6
8
10
12
14
16
Drain to Source Current, I
DS
(A)
Drain to Source Current, I
DS
(A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 600V)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (V
DD
= 400V)
6
C3M0280090D Rev. 2, 09-2021
Typical Performance
140
120
100
80
120
Conditions:
I
DS
Conditions:
=
7.5 A
25 °C
T
J
=
V
DD
I
DS
V
DD
=
400 V
400 V
=
=
100
80
60
40
20
0
R
G(ext)
=
2.5 Ω
-4/+15 V
201 μH
7.5 A
=
V
GS
=
-4/+15 V
V
GS
L =
E
Total
E
On
C3M0280090D
FWD =
201 μH
FWD =
C3M0280090D
L =
E
Total
E
On
60
40
20
E
Off
E
Off
0
0
25
50
75
100
125
150
175
0
5
10
15
20
25
Junction Temperature, T
J
(°C)
External Gate Resistor RG(ext) (Ohms)
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
Figure 25. Clamped Inductive Switching Energy vs. R
G(ext)
40
Conditions:
T =
V
DD
25 °C
J
35
30
25
20
15
10
5
=
400 V
t
r
I
DS
=
7.5 A
=
-4/+15 V
C3M0280090D
V
GS
FWD =
t
d(off)
t
f
t
d(on)
0
0
5
10
15
20
25
External Gate Resistor RG(ext) (Ohms)
Figure 27. Switching Times vs. R
G(ext)
Figure 28. Switching Times Definition
7
C3M0280090D Rev. 2, 09-2021
Test Circuit Schematic
Q
1
R
G
C3M0280090D
V
GS
= – 4V
V
DC
Q
2
R
G
C3M0280090D
D.U.T
Figure 29. Clamped Inductive Switching Test Circuit
Note (3): Turn-off and Turn-on switching energy and timing values measured using SiC MOSFET Body Diode as shown above.
8
C3M0280090D Rev. 2, 09-2021
Package Dimensions
Package TO-247-3
1
2
3
NOTE ;
1. ALL METAL SURFACES: TIN PLATED,EXCEPT AREA OF CUT
2. DIMENSIONING & TOLERANCEING CONFIRM TO
ASME Y14.5M-1994.
3. ALL DIMENSIONS ARE IN MILLIMETERS.
ANGLES ARE IN DEGREES.
4. THIS DRAWING WILL MEET ALL DIMENSIONS REQUIREMENT
OF JEDEC outlines TO-247 AD.
5. DIMENSION DO NOT INCLUDE BURR OR MOLD FLASH.
1 – GATE
2 – DRAIN
3 – SOURCE
4 – DRAIN
9
C3M0280090D Rev. 2, 09-2021
Package Dimensions
Package TO-247-3
A
4.83
2.29
1.91
1.07
1.91
5.21
2.54
2.16
1.33
2.41
3.38
0.68
21.10
17.65
1.25
16.13
14.15
5.10
1.90
13.43
.190
.090
.075
.042
.075
.113
.022
.819
.640
.037
.620
.516
.145
.039
.487
.214 BSC
3
.205
.100
.085
.052
.095
.133
.027
.831
.695
.049
.635
.557
.201
.075
.529
A1
A2
b
b1
b3
c
2.87
0.55
20.80
16.25
0.95
15.75
13.10
3.68
D
D1
D2
E
E1
E2
E3
E4
e
1.00
12.38
5.44 BSC
3
N
19.81
4.10
3.51
5.49
6.04
20.32
4.40
3.65
6.00
.780
.161
.138
.216
.238
.800
.173
.144
.236
.248
L
L1
∅
P
Q
6.30
S
17.5° REF.
3.5° REF.
4° REF.
T
W
X
Recommended Solder Pad Layout
TO-247-3
10
C3M0280090D Rev. 2, 09-2021
Notes
•
•
•
RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the
threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/
EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or
REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical
equipment, aircraft navigation or communication or control systems, air traffic control systems.
Related Links
•
•
•
SPICE Models:
http:
/
/
wolfspeed.com/power/tools-and-support
SiC MOSFET Isolated Gate Driver reference design:
http:
/
/
wolfspeed.com/power/tools-and-support
SiC MOSFET Evaluation Board:
http:
/
/
wolfspeed.com/power/tools-and-support
Cree, Inc.
4600 Silicon Drive
Copyright © 2021 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
C3M0280090D Rev. 2, 09-2021
11
