WPMtek-Wei-Pan-Microelectronics-D882
| Part # | WPMtek-Wei-Pan-Microelectronics-D882 |
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D882
SO
T
–
89
-3L
Plastic-Encapsulate Transistors
TRANSISTOR (NPN)
SOT-89
-3L
1.
BASE
FEATURES
Power dissipation
2.
COLLECTOR
MAXIMUM RATINGS (T
a
=25
℃
unless otherwise noted)
3.
EMITTER
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Value
40
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
6
V
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from
3
A
P
C
0.5
W
℃
/W
R
ӨJA
25
0
Junction
to Ambient
T
J
Junction
T
e
mperature
Storage
T
e
mperature
150
℃
℃
T
stg
-55
~
150
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
unless otherwise specified)
Parameter
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
Test conditions
I
C
= 100
μ
A, I
E
=0
I
C
= 10mA, I
B
=0
I
E
= 100
μ
A, I
C
=0
V
CB
= 40
V
,
I
E
=0
V
CE
= 30
V
,
I
B
=0
V
EB
= 6V, I
C
=0
M
in
40
30
6
T
yp
Max
Unit
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
1
10
1
µA
µA
µA
Collector cut-off current
I
CEO
Emitter cut-off current
I
EBO
h
FE(1)
V
CE
=2
V
,
I
C
= 1A
V
CE
=2
V
,
I
C
= 100mA
I
C
= 2A, I
B
= 0.2 A
I
C
= 2A, I
B
= 0.2 A
60
32
400
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
CE(sat)
V
BE(sat)
0.5
1.5
V
V
V
CE
= 5V ,
Ic=0.1A
Transition frequency
f
T
50
MHz
f =10MHz
CLASSIFICATION OF h
FE(1)
R
O
Y
GR
200-400
Rank
60-120
100-200
160-320
Range
V1.0
_Aug,2018
– 1 –
D882
SO
T
–
89
-3L
Plastic-Encapsulate Transistors
SO
T
–
89-3L
Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
1.600
0.520
0.580
0.440
4.600
Min
Max
0.063
0.020
0.023
0.017
0.181
A
b
b1
c
1.400
0.320
0.400
0.350
4.400
0.055
0.013
0.016
0.014
0.173
D
D1
E
E1
e
e1
L
1.550 REF.
0.061 REF.
2.300
3.940
2.600
4.250
0.091
0.155
0.102
0.167
1.500 T
Y
P
.
3.000 T
Y
P
.
0.060 T
Y
P
.
0.118 T
Y
P
.
0.900
1.200
0.035
0.047
SO
T
–
89-3L
Suggested Pad Layout
V1.0
_Aug,2018
– 2 –
