WPMtek-Wei-Pan-Microelectronics-MMBT2222A
| Part # | WPMtek-Wei-Pan-Microelectronics-MMBT2222A |
Download  | WPMtek-Wei-Pan-Microelectronics-MMBT2222A |
MMBT2222
A
TRANSISTOR(NPN)
SOT-23
贴片塑封三极管
SOT-23
SOT-23 Plastic-Encapsulate Transistors
特
征
Features
与
MMBT2907
配对
; Complementary to MMBT2907
最大功率耗
散
250mW; Power Dissipation of 250mW
高稳定性和可靠性。
High Stability and High Reliability
机械数
据
Mechanical Data
封装
: SOT-23
封
装
SOT-23 Small Outline Plastic Package
环氧树
脂
UL
易燃等
级
Epoxy UL: 94V-0
安装位置
:
任
意
Mounting Position: Any
极限值和温度特性
(
TA = 25
℃
除非另有规定
)
Maximum Ratings & Thermal Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified.)
参数
Parameters
符
号
Symbol
数
值
Value
单
位
Unit
Collector-Base Voltage
V
CBO
V
CEO
V
EBO
I
C
75
4
0
V
V
Collector-Emitter Voltage
Emitter -Base Voltage
6
V
Collector Current-Continuous
Collector Power Dissipation
Junction
T
e
mperature
600
mA
mW
℃
P
C
250
T
j
150
Storage
T
e
mperature
T
s
tg
R
θJA
-55-+150
500
℃
Thermal resistance From junction to ambient
℃
/W
电特性
(
TA = 25
℃
除非另有规定
)
Electrical Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified).
界
限
Limits
参数
符号
测试条件
单位
Parameter
Symbols
Test Condition
Unit
Min
75
4
0
6
Max
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
CBO
I
EBO
h
FE(1)*
h
FE(2)*
h
FE(3)*
V
CE(sat)1*
V
CE(sat)2*
V
BE(sat)*
f
T
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
C
=10uA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10uA, I
C
=0
V
CE
=30V, V
EB(off)
=3V
V
CB
=60V, I
E
=0
V
V
V
nA
nA
nA
10
10
100
300
V
EB
=3V, I
C
=0
V
CE
=10V, I
C
=150mA
V
CE
=10V, I
C
=0.1mA
V
CE
=10V, I
C
=500mA
I
C
=500mA, I
B
=50mA
I
C
=150mA, I
B
=15mA
I
C
=500mA, I
B
=50mA
V
CE
=20V, I
C
=20mA,f=100MHz
V
CC
=30V, V
BE(off)
=-0.5V, I
C
=150mA,
I
B1
=15mA
100
40
42
DC current gain
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
Delay time
1.00
0.30
1.20
V
V
V
MHz
nS
nS
nS
nS
300
t
d
t
r
ts
tf
10
25
225
60
Rise time
Storage time
Fall time
V
CC
=30V, I
C
=150mA, I
B1=
I
B2
=15mA
*Pulse test: pulse width
≤
300us, duty cycle
≤2.0%.
CLASSIFICATION OF h
FE(1)
HFE
RANK
RANGE
100-300
L
H
100-200
200-300
V1.0,Aug_
201
8
-1-
MMBT2222
A
TRANSISTOR(NPN)
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package
焊盘设计参考
Precautions: PCB Design
Recommended land dimensions for SO
T
–
23 diode. Electrode patterns for PCBs
联系信息
Contact Information
WPMTEK Incorporated Limited
Floor 1 Building 4#, Binxianghua Industry Park, No.7,
Huada Road, Hualian Communit
y
,
L
onghua New District, Shenzhen
TEL: 86755-29308003
F
A
X : 86755-23739900
V1.0,Aug_
201
8
–
3
–
