WPMtek-Wei-Pan-Microelectronics-MMBT2907A
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MMBT2907A
SOT-23 BIPOLAR TRANSISTORS (PNP)
FEATURES
* Power dissipation
P
CM
0.3 W(Tamb=25
O
C)
Collector current
*
*
*
I
CM
-0.6
Collector-base voltage
-60 V
A
V
:
(BR)CBO
SOT-23
Operating and storage junction temperature range
T ,T
stg
: -55
O
Cto+150
O
C
J
COLLECTOR
3
MECHANICAL DATA
1
* Case: Molded plastic
BASE
0.055(1.40)
0.047(1.20)
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
2
EMITTER
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
* Weight: 0.008 gram
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
1
2
0.019(2.00)
0.071(1.80)
0.118(3.00)
0.110(2.80)
3
Dimensions in inches and (millimeters)
MAXIMUM RATINGES
( @ T
A
= 25
o
C unless otherwise noted )
RATINGS
(1)
SYMBOL
P
D
VALUE
300
UNITS
mW
o
C
o
O
Max. Steady State Power Dissipation
Max. Operating Temperature Range
Storage Temperature Range
@TA=25 C Derate above 25 C
150
T
J
T
STG
o
C
-55 to +150
ELECTRICAL CHARACTERISTICS
( @ T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
SYMBOL
R
θ
JA
MIN.
–
TYP.
–
MAX.
417
UNITS
o
C/W
Thermal Resistance Junction to Ambient
Notes : 1. Alumina=0.4*0.3*0.024in.99.5% alumina
2. ” Fully ROHS Compliant “, “100% Sn plating (Pb-free)”.
Rve.A_Aug,2017
-1-
MMBT2907A
SOT-23 BIPOLAR TRANSISTORS (PNP)
ELECTRICAL CHARACTERISTICS
(@TA=25
O
C unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage(1) (I
= -10 mAdc, I
= 0)
V
-60
–
Vdc
C
B
(BR)CEO
Collector-Base Breakdown Voltage (I
= -10uAdc, I
= 0)
V
V
-60
–
–
Vdc
Vdc
C
E
(BR)CBO
(BR)EBO
Emitter-Base Breakdown Voltage (I
= -10uAdc, I
= 0)
-5.0
E
C
Collector Cutoff Current (V
Collector Cutoff Current (V
(V
= -30Vdc, V
= -5.0Vdc)
I
–
–
-50
-0.02
nAdc
CE
CB
CB
BE(off)
CEX
= -50Vdc, I
= 0)
E
I
uAdc
nAdc
CBO
= -50Vdc, I
= 0, TA= 125
O
C)
–
–
-20
-50
E
Base Current (V
= -30Vdc, V
= -0.5Vdc)
I
CE
EB(off)
B
ON CHARACTERISTICS
DC Current Gain (I
= -0.1mAdc, V
C
= -10Vdc)
= -10Vdc)
75
100
100
100
50
–
–
–
CE
CE
(I =
-1.0mAdc, V
C
(I =
-10mAdc, V
= -10Vdc)
h
–
–
C
CE
FE
(I =
-150mAdc, V
C
= -10Vdc)(1)
300
–
CE
(I =
-500mAdc, V
= -10Vdc)(1)
CE
C
Collector-Emitter Saturation Voltage (1) (I
= -150mAdc, I
= -15mAdc)
-0.4
-1.6
C
B
V
Vdc
Vdc
CE(sat)
(I =
-500mAdc, I
= -50mAdc)
B
–
C
Base-Emitter Saturation Voltage (1) (I
= -150mAdc, I
= -15mAdc)
–
–
-1.3
-2.6
C
B
V
BE(sat)
(I =
-500mAdc, I
= -50mAdc)
C
B
SMALL-SIGNAL CHARACTERISTICS
f
200
–
MHz
pF
Current-Gain-Bandwidth Product (1)(2) (I
= -50mAdc, V
= -20Vdc, f= 100MHz)
CE
T
C
C
–
–
8.0
30
Output Capacitance (V
= -10Vdc, I
= 0, f= 1.0MHz)
E
obo
CB
C
pF
Input Impedance (V
EB
= -2.0Vdc, I
= 0,
f= 1.0MHz)
ibo
C
SWITCHING CHARACTERISTICS
t
Turn-On Time
–
45
10
on
(V
(V
= -30Vdc ,I
= -150mAdc, I
= -15mAdc)
B1
t
Delay Time
Rise Time
–
ns
ns
CC
CC
C
d
t
–
–
40
100
80
r
t
Turn-Off Time
Storage Time
Fall Time
off
= -6.0Vdc, I
= -150mAdc, I
= I
= -15mAdc)
B1 B2
t
–
C
s
t
f
–
30
<
<
NOTES :
1. Pulse Test: Pulse Width
300ms,Duty Cycle
2.0%
–
–
2. f
is defined as the frequency at which |h
| extrapolates to unity
T
FE
Rve.A_Aug,2017
-2-
MMBT2907A
SOT-23 BIPOLAR TRANSISTORS (PNP)
RATING AND CHARACTERISTICS CURVES
3.0
V
V
=
=
-1. 0V
-10V
CE
CE
= 125
O
C
2.0
T
J
25
O
C
1.0
-55
O
C
0.7
0.5
0.3
0.2
-0.1
-0.2 -0.3
-0.5 -0.7
-1.0
-2.0
-3.0
-5.0 -7.0
-10
-20
-30
-50 -70
-100
-200
-300
-500
I
, COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
±1.0
±0.8
– 10mA
– 100 mA
– 500 mA
I
= – 1.0mA
C
±0.6
±0.4
±0.2
0
-0.005
-0.01
-0.02 -0.03
-0.05 -0.07 -0.1
-0.2
-0.3
-0.5 -0.7
-1.0
-2.0
-3.0
-5.0 -7.0
-10
-20
-30
-50
I
, BASE CURRENT
(mA)
B
Figure 2.
Collector Saturation Region
300
200
500
300
V
I
=-30V
CC
V
I
=-30V
CC
/I =10
/I =10
C
200
C
B
B
t
r
T
=25
O
C
100
t
I
=I
B1 B2
J
f
70
50
T
=25
O
C
J
100
70
50
30
20
t
‘s=t’s-1/8t
f
30
20
t
d
@ V
=0V
BE(off)
10
7.0
5.0
10
2.0 V
7.0
5.0
3.0
-5.0 -7.0
-10
-20 -30
-50 -70
-100
-200 -300
-500
-5.0 -7.0
-10
-20 -30
I ,
COLLECTOR CURRENT (mA)
C
-50 -70
-100
-200 -300
-500
I
, COLLECTOR CURRENT (mA)
C
Figure 3.
Turn – On Time
Figure 4.
Turn – Off Time
Rve.A_Aug,2017
–
3
–
MMBT2907A
SOT-23 BIPOLAR TRANSISTORS (PNP)
RATING AND CHARACTERISTICS CURVES
10
10
f = 1.0 kHz
8.0
8.0
I
= – 1.0mA , R
=430
Ω
S
6.0
4.0
2.0
0
C
6.0
4.0
I
= – 50uA
C
– 500 uA , R
=560
– 50 uA , R
=2.7k
– 100 uA , R
=1.6k
Ω
S
– 100 uA
– 500 uA
– 1.0mA
Ω
S
Ω
S
R
= OPTIMUM SOURCE RESISTANCE
2.0
0
S
0.01 0.02
0.05 0.1
0.2
0.5 1.0
2.0
5.0 10
20
50 100
50
100 200
500 1.0k
2.0k
5.0k 10k
20k
50k
f, FREQUENCY (KHz)
R ,
SOURCE RESISTANCE (OHMS)
S
Figure 5.Frequency Effects
Figure 6.Source Resistance Effects
30
20
400
300
C
eb
200
10
100
80
7.0
5.0
V
T
= -20V
CE
J
= 25
O
C
60
C
cb
40
30
3.0
2.0
20
-0.1
-0.2 -0.3
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20 -30
-1.0 -2.0
-5.0
-10
-20
-50 -100
-200
-500 -1000
REVERSE VOLTAGE (V)
I ,
COLLECTOR CURRENT (mA)
C
Figure 7.Capacitances
Figure 8.Currunt-Gain Bandwidth Product
+0.5
0
-1.0
T
= 25
O
C
J
@
V
I /I
= 10
C B
BE(sat)
-0.8
-0.6
-0.4
-0.2
R
for V
(sat)
CE
θ
VC
±0.5
@
V
V
CE
= -10V
BE(on)
±1.0
±1.5
R
for V
BE
θ
VB
±2.0
±2.5
@
V
I /I
= 10
C B
CE(sat)
0
-0.1 -0.2
-0.5 -1.0
-2.0 -5.0
-10 -20
-50 -100
-200 -500
-0.1 -0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50 -100
-200 -500
I
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
C
Figure 9.”On” Voltages
Figure 10.Temperature Coefficients
Rve.A_Aug,2017
–
4
–
