WPMtek-Wei-Pan-Microelectronics-MMBT3906
| Part # | WPMtek-Wei-Pan-Microelectronics-MMBT3906 |
Download  | WPMtek-Wei-Pan-Microelectronics-MMBT3906 |
Integrated in
OVP&OCP
products
provider
MMBT390
6
SOT-23 Plastic-Encapsulate Transistors
SOT-23
特
征
Features
与
MMBT3904
配对
; Complementary to MMBT3904
最大功率耗
散
200mW; Power Dissipation of 200mW
高稳定性和可靠性。
High Stability and High Reliability
机械数
据
Mechanical Data
封装
: SOT-23
封
装
SOT-23 Small Outline Plastic Package
环氧树
脂
UL
易燃等
级
Epoxy UL: 94V-0
Marking: 2A
安装位置
:
任
意
Mounting Position: Any
极限值和温度特性
(
TA = 25
℃
除非另有规定
)
Maximum Ratings & Thermal Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified.)
参数
Parameters
符
号
Symbol
V
CBO
V
CEO
V
EBO
I
C
数
值
Value
-40
单
位
Unit
Collector-Base Voltage
V
V
Collector-Emitter Voltage
Emitter -Base Voltage
-40
-5
V
Collector Current-Continuous
Collector Power Dissipation
Junction
T
e
mperature
-200
200
mA
mW
℃
P
C
T
j
150
Storage
T
e
mperature
T
s
tg
-55-+150
625
℃
Thermal resistance From junction to ambient
R
θJA
℃
/W
电特性
(
TA = 25
℃
除非另有规定
)
Electrical Characteristics
(
Ratings at 25
℃
ambient temperature unless otherwise specified).
界
限
Limits
参数
Parameter
符号
Symbols
测试条件
Test Condition
单位
Unit
Min
-40
-40
-5
Max
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CEX
I
CBO
I
EBO
h
FE(1)
h
FE(2)
h
FE(3)
V
CE(sat)1
V
BE(sat)
f
T
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
I
C
=-10uA, I
E
=0
I
C
=-1mA, I
B
=0
I
E
=-10uA, I
C
=0
V
CE
=-30V, V
EB(off)
=-3V
V
CB
=-40V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-1V, I
C
=-10mA
V
CE
=-1V, I
C
=-50mA
V
CE
=-1V, I
C
=-100mA
I
C
=-50mA, I
B
=-5mA
V
V
V
nA
nA
nA
-100
-50
-100
300
100
60
DC current gain
30
Collector-emitter saturation voltage
Base -emitter saturation voltage
Transition frequency
-0.30
-0.95
V
V
MHz
nS
I
C
=-50mA, I
B
=-5mA
V
CE
=-20V, I
C
=-10mA,f=100MHz
VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-1mA
300
t
d
Delay time
35
VCC=-3V, VBE(off)=-0.5V, IC=-10mA, IB1=-1mA
t
r
ts
tf
Rise time
Storage time
Fall time
35
225
75
nS
nS
nS
V
CC
=-3V, I
C
=-10mA, I
B1=
I
B2
=-1mA
V
CC
=-3V, I
C
=-10mA, I
B1=
I
B2
=-1mA
CLASSIFICATION OF h
FE(1)
HFE
RANK
RANGE
100-300
L
H
100-200
200-300
Rev.A_Aug,2017
– 1 –
Integrated in
OVP&OCP
products
provider
MMBT390
6
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package
焊盘设计参考
Precautions: PCB Design
Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs
Rev.A_Aug,2017
– 1 –
