WPMtek-Wei-Pan-Microelectronics-MMBT5401
| Part # | WPMtek-Wei-Pan-Microelectronics-MMBT5401 |
Download  | WPMtek-Wei-Pan-Microelectronics-MMBT5401 |
Integrated in
OVP&OCP
products
provider
MMBT5
4
01
TRANSISTOR (PNP)
FEATURES
SOT-23
Complementary to MMBT5551
Ideal for medium power amplification and switching
1
．
BASE
2
．
EMITTER
3
．
COLLECTOR
MARKING: 2L
MAXIMUM RATINGS (T
A
=25
℃
unless otherwise noted)
Symbol
V
CBO
V
CEO
V
EBO
I
C
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Value
-160
-150
-5
Units
V
V
V
Collector Current -Continuous
Collector Power Dissipation
Junction
T
e
mperature
-0.6
A
P
C
0.3
W
℃
℃
T
j
150
T
stg
Storage Temperature
-55-150
ELECTRICAL CHARACTERISTICS (Tamb=25
℃
unless otherwise specified)
Parameter
Symbol
Test conditions
I
C
= -100
µA
I
E
=0
MIN
MAX UNIT
,
V
(BR)CBO
-160
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V
V
V
-150
V
(BR)CEO
I
C
= -1mA,
I
B
=0
I
E
= -10
µA
, I
C
=0
-5
V
(BR)EBO
-0.1
µA
I
CB
V
CB
=-120 V,
I
E
=0
V
EB
=-4V ,
I
C
=0
O
-0.1
µA
I
EBO
h
FE1
h
FE2
h
FE3
Emitter cut-off current
80
V
CE
= -5
V
,
I
C
= -1mA
V
CE
= -5
V
,
I
C
=-10mA
V
CE
= -5
V
,
I
C
=-50mA
100
300
DC current gain
50
-0.5
V
V
CE
(sat) I
C
=-50 mA,
I
B
= -5mA
Collector-emitter saturation voltage
Base-emitter saturation voltage
-1
V
BE
(sat) I
C
= -50 mA,
I
B
= -5mA
V
V
CE
= -5
V
,
I
C
= -10mA
f
T
Transition frequency
100
MHz
Rev.A_Aug,2017
– 1 –
Integrated in
OVP&OCP
products
provider
MMBT5
4
01
Typical Characteristics
Rve.A_Aug,2017
-2-
Integrated in
OVP&OCP
products
provider
MMBT5
4
01
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT-23
Rve.A_Aug,2017
-3-
